SILICON NPN EPITAXIAL PLANAR TYPE Search Results

Contextual Info: DMC366AM Tentative Total pages page DMC366AM Silicon NPN epitaxial planar type Tr1 Silicon NPN epitaxial planar type (Tr2) For digital circuits Marking Symbol : R6 Internal Connection Package Code : SSSMini6-F2-B 6 Collector-base voltage (Emitter open) Tr1

n24 transistor

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are

air variable capacitor

Abstract: POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC3102 2SC310 mica capacitor mica material capacitor murata pir
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING cally designed for high power amplifiers applications in UHF band. Dimensions in mm R1 FEATURES

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •

2SC2237

Abstract: 8w RF POWER TRANSISTOR NPN RF TRANSISTOR RF POWER TRANSISTOR NPN vhf 7001k
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2237 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2237 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES •

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2056 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band portable or hand-held radio applications. Dimensions in mm

Contextual Info: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2S C 2131 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2131 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications. Dimensions in mm FEATURES •

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm R1 FEATURES •

2SC1969

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions i'

2SC2086

Abstract: 50S5 transistor U4 NPN Silicon Epitaxial Planar Transistor to92 2sc2086 transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2086 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC2086 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES

2n5320

Contextual Info: rZ 7 SGS-THOMSON Ä T# 2N5320 2N5321 [MO gfô l[L[iera®*S SMALL SIGNAL NPN TRANSISTORS . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MEDIUM POWER AMPLIFIER . PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal

Contextual Info: DME20C01 Silicon PNP epitaxial planar type Tr1 Silicon NPN epitaxial planar type (Tr2) Unit: mm For general amplification • Features  High forward current transfer ratio hFE with excellent linearity  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed -for RF power amplifiers in 1,65GHz. FEATURES High power gain : Gpb S 9.3dB, Po fe 6W

Z60N

Contextual Info: MITSUBISHI RF POWER TRANSISTOR bSMTflST QÜ17703 ÔTT 2SC4240 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 4240 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for VHF power amplifier applications. OUTLINE DRAWING Dim ensions in mm

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1946A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1946A is a silicon NPN epitaxial planar type transistor de­ Dim ensions in m m signed for RF power amplifiers on V H F band mobile radio applications. FEATURES

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING cally designed fo r high power amplifiers applications in UHF band. Dim ensions in mm R1 FEATURES

RF POWER TRANSISTOR NPN

Abstract: mitsubishi RF POWER TRANSISTOR Mitsubishi databook 2SC3628 T-46
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES •

2SC1966

Abstract: mitsubishi 20 mt 2sc196
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1966 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1966 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on U H F band mobile radio applications. FEATURES •

Contextual Info: DMG9640T Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits • Features  High forward current transfer ratio hFE  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant

dmg564

Contextual Info: DMG5640N Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits • Features  High forward current transfer ratio hFE  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant

2SC2166

Abstract: 2sc2166 transistor transistor 2sC2166 RF POWER TRANSISTOR NPN T-30 transistor npn 12V 1A Collector Current
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2166 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in HF band mobile radio applications. • 03.6 ± 0.2 9.1 ± 0 . 7 FEATURES

2SC1945

Abstract: TO220 RF POWER TRANSISTOR NPN IDO24 TRANSISTOR 2sC1945 2sC1945 NPN circuit rf amplifier 2sc1945 12V-pm mitsubishi 2sc1945
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES • 0 3 .6 ± 0 . 2

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X