SILICON N CHANNEL IGBT HIGH SPEED POWER SWITCHING Search Results

Contextual Info: TO SH IBA TENTATIVE MIG50J804H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG50J804H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 3ji 50A /600V High Speed Type IGBT

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES  High speed low loss IGBT. Low-injection punch-through IGBT.  Low driving power due to low input capacitance MOS gate.  High speed low recovery loss diode.

GT60M303 application

Abstract: GT60M303
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s TYP. FRD : trr = 0.7 s (TYP.)

GT60M303 application

Abstract: GT60M303 circuit igbt failure rate
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25µs TYP.

GT60M303

Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)

GT60M303 application

Abstract: GT60M303 gt60m303 application notes
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25 s TYP.

MG150J7KS50

Contextual Info: MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT :

28v motor toshiba

Abstract: transistor a 92
Contextual Info: MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT :

GT30J301

Contextual Info: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. : VCE (sat) = 2.7V (Max.)

10j312

Abstract: GT10J312 marking code SM diode
Contextual Info: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.)

gt60n321

Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)

15j321

Abstract: TRANSISTOR 15J321 GT15J321 TRANSISTOR 10003 TOSHIBA IGBT DATA BOOK 2-10R1C marking 6_a
Contextual Info: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.

Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)

TRANSISTOR 15J321

Abstract: 15j321 RG105
Contextual Info: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.

GT60N321

Abstract: GT60N321 circuits TOSHIBA IGBT DATA BOOK
Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)

15j301

Abstract: transistor 15j301 GT15J301 2-10R1C
Contextual Info: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 15A) Low saturation voltage

GT60N32

Abstract: GT60N321
Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)

GT60N32

Abstract: gt60n321 GT60 IC601
Contextual Info: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)

10j303

Abstract: IGBT Guide GT10J303 Toshiba c
Contextual Info: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed Low saturation voltage : tf = 0.30µs Max. (IC = 10A)

2-10R1C

Abstract: 5J301 GT5J301 Toshiba c
Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 5A) Low saturation voltage

15j321

Abstract: TRANSISTOR 15J321 2-10R1C GT15J321 RG300A
Contextual Info: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 s (typ.

MG100J7KS50

Contextual Info: MG100J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100J7KS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT

Contextual Info: MG100J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100J7KS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT

Contextual Info: GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Unit: mm High speed: tf = 0.05 s (typ.)