SILICON BRIDGE Search Results

Silicon Microstructures

Abstract: OEM PRESSURE SILICON DIE SM5112 harsh pressure die Microstructures
Contextual Info: SM5112 SILICON MICROSTRUCTURES INCORPORATED • • Harsh Environment Absolute Silicon Pressure Die OEM ABSOLUTE SILICON PRESSURE SENSOR DIE FOR HARSH ENVIRONMENTS REAR ENTRY FOR PROTECTION OF THE PIEZORESISTIVE BRIDGE NETWORK – ONLY SILICON AND GLASS EXPOSED

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

Contextual Info: SENSITRON SEMICONDUCTOR SPM1007 TECHNICAL DATA DATA SHEET 5393, REV. B 1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE WITH SILICON CARBIDE DIODES FEATURES: • 80mΩ typical on-resistance  Low Vf silicon carbide Schottky barrier diode included in parallel with body diode

RAS310AF

Abstract: RAS310AF-1B1 RAS310 ITT Semiconductors avalanche rectifier
Contextual Info: ITT Sem iconductors Silicon Rectifier Bridges Silicon Avalanche Rectifier Bridge 1i Am p Type RAS310AF-1B1 The R A S 3 1 0 A F silicon 1 i am p avalanche rectifiers are available as miniature assem blies. T h ese assem blies, incorporating tour rectifiers

C31-YMLLLLS

Abstract: 1Mx16x4 1Mx16x4 SDRAM SPRU190 TMS320C6000 TMS320C6202 TMS320C6202B
Contextual Info: TMS320C6202, TMS320C6202B Digital Signal Processors Silicon Errata C6202 Silicon Revisions 1.0, 1.1, 1.2 C6202B Silicon Revisions 3.0, 3.1 SPRZ152H November 2000 Revised February 2004 Copyright  2003, Texas Instruments Incorporated TMS320C6202, TMS320C6202B Silicon Errata

Silicon Microstructures

Abstract: MEDICAL PRESSURE die SM5102 OEM PRESSURE SILICON DIE
Contextual Info: SM5102 SILICON MICROSTRUCTURES INCORPORATED • OEM Silicon Pressure Die OEM SILICON PRESSURE SENSOR DIE DESCRIPTION Compensated The SM5102 is a silicon micro-machined, piezoresistive pressure-sensing chip. These devices are available in full-scale ranges

TMS320TCI6484

Abstract: DMC TOOLS spruea7 "saturation value"
Contextual Info: TMS320TCI6484 Fixed-Point Digital Signal Processor Silicon Revisions 1.0, 1.1, 1.2, 1.3, 1.4 Silicon Errata Literature Number: SPRZ299 November 2009 www.ti.com 2 TMS320TCI6484 Fixed-Point Digital Signal Processor Silicon Errata Silicon Revisions 1.0, 1.1, 1.2, 1.3, 1.4

EPKT

Abstract: EPKT Termination markings 27B2 TMS320 TMS320C6421 TMS320C6424 spru871 C642x TMS320C6424ZWT
Contextual Info: TMS320C6424/21 Digital Signal Processor DSP Silicon Revisions 1.3, 1.2, 1.1, and 1.0 Silicon Errata Literature Number: SPRZ252C March 2007 – Revised January 2008 Silicon Errata SPRZ252C – March 2007 – Revised January 2008 TMS320C642x DSP Silicon Revisions 1.3, 1.2, 1.1, and 1.0

DM6437ZWT

Abstract: TMS320DM6437 dm6437 DM6431 A120 SPRU983 TMS320DM6431 TMS320DM6435 I2C applications DM6437 27B2
Contextual Info: TMS320DM6437/35/33/31 Digital Media Processor DMP Silicon Revisions 1.3, 1.2, 1.1, and 1.0 Silicon Errata Literature Number: SPRZ250D January 2007 – Revised January 2008 Silicon Errata SPRZ250D – January 2007 – Revised January 2008 TMS320DM643x DMP Silicon Revisions 1.3, 1.2, 1.1, and

Diode press-fit

Contextual Info: BYZ 50A22 . BYZ50K39 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module Absolute Maximum Ratings Symbol Conditions 222 270 Silicon Press-fit diodes Silicon Protectifiers with

e660

Contextual Info: BYZ 35A22 . BYZ 35K39 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module Absolute Maximum Ratings Symbol Conditions 333 391 Silicon Press-fit diodes Silicon Protectifiers with

full wave bridge rectifier

Abstract: SHB645052E
Contextual Info: SHB645052E SENSITRON SEMICONDUCTOR Technical Data Datasheet 4287 REV. – HERMETIC QUAD SILICON CARBIDE RECTIFIER DESCRIPTION: FOUR 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIERS IN A HERMETIC DUAL TO-257 PACKAGE. IDEAL FOR CONNECTION AS A BRIDGE. FEATURES:

175C

Abstract: SHB645052E 1200-VOLT
Contextual Info: SHB645052E SENSITRON SEMICONDUCTOR Technical Data Datasheet 4287 REV. A HERMETIC QUAD SILICON CARBIDE RECTIFIER DESCRIPTION: FOUR 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIERS IN A HERMETIC DUAL TO-257 PACKAGE. IDEAL FOR CONNECTION AS A BRIDGE. FEATURES:

SHB636053E

Contextual Info: SENSITRON SHB636053E Technical Data Datasheet 4338, Rev A HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

Bridge Rectifiers

Contextual Info: STANDARD RECOVERY 3-PHASE SILICON BRIDGE RECTIFIERS January 16, 1998 S3BR05 thru S3BR30 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 5 2008 SEMTECH CORP 258 www.semtech.com STANDARD RECOVERY 3-PHASE SILICON BRIDGE RECTIFIERS S3BR05 thru

Contextual Info: TitlePage - 80C1000_MA002_02 Tsi106 PowerPC Host Bridge Hardware Specifications Manual Document Number: 80C1000_MA002_02 Document Status: Formal Release Date: October 2006 Silicon 360™ Trademarks Silicon360 is a registered trademark of Silicon Turnkey Solutions. Silicon360, the Silicon360 logo, Tsi106, and

SHB681123E

Contextual Info: SENSITRON SEMICONDUCTOR SHB681123E Technical Data Datasheet 5015, Rev - HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 20 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

Contextual Info: SENSITRON SEMICONDUCTOR SHB636053E Technical Data Datasheet 4338, Rev - HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

EJ marking

Contextual Info: Central" CBR1-D020S SERIES Semiconductor Corp. SURFACE MOUNT 1 AMP DUAL IN LINE SILICON BRIDGE RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR1-D020S series types are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount mold­

SHB636053E

Contextual Info: SENSITRON SEMICONDUCTOR SHB636053E Technical Data Datasheet 4338, Rev A HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

4804

Abstract: C 4804 4804 B MOSFET Module 24v 200A MSK4804
Contextual Info: MIL-PRF-38534 CERTIFIED 1200V/100A SiC HALF BRIDGE M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 PEM FEATURES: 4804 315 701-6751 Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching Silicon Carbide Diode Provides Near Zero Recovery

SHB601052E

Contextual Info: SENSITRON_ SEMICONDUCTOR SHB601052E Technical Data Datasheet 4308 REV. C Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 1200-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES:

175C

Abstract: SHB681123E
Contextual Info: SENSITRON SEMICONDUCTOR SHB681123E Technical Data Datasheet 5015, Rev A HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 20 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

Bridge Rectifiers

Abstract: BRIDGE-RECTIFIER S3BR05 S3BR30
Contextual Info: STANDARD RECOVERY 3-PHASE SILICON BRIDGE RECTIFIERS January 16, 1998 1997 SEMTECH CORP. S3BR05 thru S3BR30 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 STANDARD RECOVERY 3-PHASE SILICON BRIDGE RECTIFIERS