SIHFPC60 Search Results

Contextual Info: IRFPC60_RC, SiHFPC60_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRFPC60PB

Contextual Info: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single Available RoHS* COMPLIANT DESCRIPTION D This new series of low charge Power MOSFETs achieve

Contextual Info: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single Available RoHS* COMPLIANT DESCRIPTION D This new series of low charge Power MOSFETs achieve

Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single Available RoHS* COMPLIANT DESCRIPTION D This new series of low charge Power MOSFETs achieve

IRFPC60

Contextual Info: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve

IRFPC60LC

Abstract: SiHFPC60LC IRFPC6
Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single Available RoHS* COMPLIANT DESCRIPTION D This new series of low charge Power MOSFETs achieve

Contextual Info: IRFPC60LC_RC, SiHFPC60LC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

IRFPC60

Abstract: SiHFPC60 IRFPC6
Contextual Info: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRFPC60

Abstract: IRFPC60 input SiHFPC60 ISD 3900
Contextual Info: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRFPC60LC

Abstract: SiHFPC60LC
Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve

Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve

Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single Available RoHS* COMPLIANT DESCRIPTION D This new series of low charge Power MOSFETs achieve