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SIHFBC40 Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHFBC40AS-GE3		Vishay Siliconix	MOSFET N-CHANNEL 600V	Original	PDF	411.17KB	10

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Vishay Intertechnologies SIHFBC40AS-GE3 MOSFET N-CHANNEL 600V - Tape and Reel (Alt: SIHFBC40AS-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHFBC40AS-GE3	Tape & Reel		50 Weeks	1,000	1 - 10 - 100 - 1000 $0.78 10000 $0.74	Buy Now
TTI	SIHFBC40AS-GE3	Reel			1,000	1 - 10 - 100 - 1000 $1.03 10000 $1.03	Buy Now
Vishay Siliconix SIHFBC40STRL-GE3 SIHFBC40STRL-GE3 N-CHANNEL MOSFET TRANSISTOR, 6.2 A, 600 V, 3-PIN D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SIHFBC40STRL-GE3	Bulk			10	1 - 10 $11.53 100 $10.15 1000 $10.15 10000 $10.15	Get Quote
Vishay Intertechnologies SIHFBC40STRL-GE3 Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SIHFBC40STRL-GE3		553		1	1 $2.25 10 $1.69 100 $1.40 1000 $0.84 10000 $0.84	Buy Now
Quest Components ()	SIHFBC40STRL-GE3		442			1 $3.60 10 $3.60 100 $3.60 1000 $1.49 10000 $1.49	Buy Now
	SIHFBC40STRL-GE3		442			1 $3.00 10 $3.00 100 $3.00 1000 $0.97 10000 $0.97	Buy Now
Vishay Intertechnologies SIHFBC40L-GE3 Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHFBC40L-GE3				1	1 $1.76 10 $1.58 100 $1.26 1000 $1.18 10000 $1.18	Get Quote

SIHFBC40 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	irfbc40as sihfbc40as o-263 2002/95/ec +22011/65/eu 12-mar-12	PDF
MAR 740 MOSFET TRANSISTOR Abstract: D 1402 Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	irfbc40a sihfbc40a 2002/95/ec o-220ab +42011/65/eu 12-mar-12 mar 740 mosfet transistor d 1402	PDF
MAR 740 MOSFET TRANSISTOR Abstract: P 648 H Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	irfbc40a sihfbc40a 2002/95/ec o-220ab +42011/65/eu 12-mar-12 mar 740 mosfet transistor p 648 h	PDF
AN609 Abstract: IRFBC40A SiHFBC40A 9043-2 Contextual Info: IRFBC40A_RC, SiHFBC40A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	irfbc40a sihfbc40a an609 20-apr-10 +19043-2	PDF
Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	irfbc40as sihfbc40as o-263 2002/95/ec +111-mar-11	PDF
Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	irfbc40as sihfbc40as 2002/95/ec o-263 +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	irfbc40a sihfbc40a 2002/95/ec o-220ab +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 V RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-220	Original	irfbc40lc sihfbc40lc o-220 12-mar-07	PDF
Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	irfbc40a sihfbc40a 2002/95/ec o-220ab +111-mar-11	PDF
Contextual Info: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) () VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve	Original	irfbc40lc sihfbc40lc 2002/95/ec 2011/65/eu +112-mar-12	PDF
IRFBC40L Abstract: IRFBC40S SiHFBC40L SiHFBC40L-E3 SiHFBC40S Contextual Info: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)	Original	irfbc40s sihfbc40s irfbc40l sihfbc40l +1sihfbc40l-e3	PDF
IRFBC20S Abstract: IRFBC40L IRFBC40S SiHFBC40L SiHFBC40L-E3 SiHFBC40S SiHFBC40S-E3 Contextual Info: IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC40S/SiHFBC40S) 600 RDS(on) (Ω) VGS = 10 V RoHS* • Available in Tape and Reel (IRFBC20S, COMPLIANT Qg (Max.) (nC) 60 Qgs (nC)	Original	irfbc40s irfbc40l sihfbc40s sihfbc40l +6irfbc40s/sihfbc40s irfbc20s sihfbc20s o-262 sihfbc40l-e3 sihfbc40s-e3	PDF
AN609 Abstract: IRFBC40AS SiHFBC40AS Contextual Info: IRFBC40AS_RC, SiHFBC40AS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	irfbc40as sihfbc40as an609 20-apr-10	PDF
Contextual Info: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements	Original	irfbc40 sihfbc40 2002/95/ec o-220ab +22011/65/eu 12-mar-12	PDF

AN609 Abstract: IRFBC40L IRFBC40S SiHFBC40L SiHFBC40S Contextual Info: IRFBC40S_RC, SiHFBC40S_RC, IRFBC40L_RC, SiHFBC40L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	irfbc40s sihfbc40s irfbc40l sihfbc40l +2an609 20-april-10	PDF
IRFBC40 Abstract: IRFBC40L IRFBC40S SiHFBC40 SiHFBC40L SiHFBC40L-E3 SiHFBC40S SiHFBC40S-E3 Contextual Info: IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S) • Dynamic dV/dt Rating	Original	irfbc40s irfbc40l sihfbc40s sihfbc40l +4irfbc40 sihfbc40 sihfbc40l-e3 sihfbc40s-e3	PDF
AN609 Abstract: IRFBC40 SiHFBC40 Contextual Info: IRFBC40_RC, SiHFBC40_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	irfbc40 sihfbc40 an609 20-apr-10	PDF
Contextual Info: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) () VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve	Original	irfbc40lc sihfbc40lc 2011/65/eu 2002/95/ec +112-mar-12	PDF
smps transformer Design using irfbc40a Abstract: IRFBC40AS SiHFBC40AS SiHFBC40AS-E3 Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	irfbc40as sihfbc40as o-263 18-jul-08 +2smps transformer design using irfbc40a sihfbc40as-e3	PDF
IRFBC40 Abstract: SiHFBC40 37AB irfbc40 free SiHFBC40-E3 Contextual Info: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements	Original	irfbc40 sihfbc40 o-220 18-jul-08 +337ab irfbc40 free sihfbc40-e3	PDF
IRFBC40LC Abstract: SiHFBC40LC-E3 SiHFBC40LC Contextual Info: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 V RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-220	Original	irfbc40lc sihfbc40lc o-220 18-jul-08 +1sihfbc40lc-e3	PDF
irfbc Abstract: IRFBC40STRLPBF Contextual Info: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)	Original	irfbc40s sihfbc40s irfbc40l sihfbc40l +2irfbc irfbc40strlpbf	PDF
Contextual Info: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) () VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve	Original	irfbc40lc sihfbc40lc 2002/95/ec 11-mar-11	PDF
Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	irfbc40as sihfbc40as o-263 12-mar-07	PDF

SIHFBC40 Search Results

SIHFBC40 Datasheets (1)

SIHFBC40 Price and Stock

Vishay Intertechnologies SIHFBC40AS-GE3

Vishay Siliconix SIHFBC40STRL-GE3

Vishay Intertechnologies SIHFBC40STRL-GE3

Vishay Intertechnologies SIHFBC40L-GE3

SIHFBC40 Datasheets Context Search

MAR 740 MOSFET TRANSISTOR

MAR 740 MOSFET TRANSISTOR

AN609

IRFBC40L

IRFBC20S

AN609

AN609

IRFBC40

AN609

smps transformer Design using irfbc40a

IRFBC40

IRFBC40LC

irfbc