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    SIHFBC40A Search Results

    SIHFBC40A Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIHFBC40AS-GE3
    Vishay Siliconix MOSFET N-CHANNEL 600V Original PDF 411.17KB 10
    SF Impression Pixel

    SIHFBC40A Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies SIHFBC40AS-GE3

    MOSFET N-CHANNEL 600V - Tape and Reel (Alt: SIHFBC40AS-GE3)
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    Avnet Americas SIHFBC40AS-GE3 Tape & Reel 50 Weeks 1,000
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    TTI SIHFBC40AS-GE3 Reel 1,000
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    SIHFBC40A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original
    irfbc40assihfbc40aso-2632002/95/ec+22011/65/eu12-mar-12 PDF

    MAR 740 MOSFET TRANSISTOR

    Abstract: D 1402
    Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    irfbc40asihfbc40a2002/95/eco-220ab+42011/65/eu12-mar-12mar 740 mosfet transistord 1402 PDF

    MAR 740 MOSFET TRANSISTOR

    Abstract: P 648 H
    Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    irfbc40asihfbc40a2002/95/eco-220ab+42011/65/eu12-mar-12mar 740 mosfet transistorp 648 h PDF

    AN609

    Abstract: IRFBC40A SiHFBC40A 9043-2
    Contextual Info: IRFBC40A_RC, SiHFBC40A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    irfbc40asihfbc40aan60920-apr-10+19043-2 PDF

    Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original
    irfbc40assihfbc40aso-2632002/95/ec+111-mar-11 PDF

    Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original
    irfbc40assihfbc40as2002/95/eco-263+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    irfbc40asihfbc40a2002/95/eco-220ab+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    irfbc40asihfbc40a2002/95/eco-220ab+111-mar-11 PDF

    AN609

    Abstract: IRFBC40AS SiHFBC40AS
    Contextual Info: IRFBC40AS_RC, SiHFBC40AS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    irfbc40assihfbc40asan60920-apr-10 PDF

    smps transformer Design using irfbc40a

    Abstract: IRFBC40AS SiHFBC40AS SiHFBC40AS-E3
    Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    irfbc40assihfbc40aso-26318-jul-08+2smps transformer design using irfbc40asihfbc40as-e3 PDF

    Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    irfbc40assihfbc40aso-26312-mar-07 PDF

    IRFBC40AS

    Abstract: SiHFBC40AS SiHFBC40AS-E3
    Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    irfbc40assihfbc40aso-26318-jul-08+1sihfbc40as-e3 PDF

    Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    irfbc40asihfbc40a2002/95/eco-220ab+32011/65/eujs709a02-oct-12 PDF

    IRFBC40A

    Abstract: SiHFBC40A SiHFBC40A-E3
    Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original
    irfbc40asihfbc40ao-22018-jul-08+1sihfbc40a-e3 PDF

    Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original
    irfbc40assihfbc40as2002/95/eco-263+118-jul-08 PDF

    Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    irfbc40asihfbc40a2002/95/eco-220ab+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    irfbc40asihfbc40a2002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    MAR 740 MOSFET TRANSISTOR

    Abstract: IRFBC40A SiHFBC40A SiHFBC40A-E3
    Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original
    irfbc40asihfbc40a2002/95/eco-220ab+311-mar-11mar 740 mosfet transistorsihfbc40a-e3 PDF

    Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original
    irfbc40assihfbc40aso-2632002/95/ec+111-mar-11 PDF