SIHF22N Search Results
SIHF22N Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIHF22N60E-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220 | Original | 8 | |||
| SIHF22N60E-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220 | Original | 8 | |||
| SIHF22N60S-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 22A TO220FP | Original | 7 | |||
| SIHF22N65E-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 22A TO-220FK | Original | 173.07KB |
SIHF22N Price and Stock
Vishay Intertechnologies SIHF22N60E-GE3Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 35W; TO220FP |
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SIHF22N60E-GE3 | 150 | 1 |
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SIHF22N60E-GE3 | 150 | 17 |
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SIHF22N60E-GE3 | Bulk | 1 |
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| SIHF22N60E-GE3 | Tape & Reel | 45 Weeks | 1,000 |
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SIHF22N60E-GE3 | 1,064 |
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SIHF22N60E-GE3 | Bulk | 594 | 1 |
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| SIHF22N60E-GE3 | Bulk | 1,000 |
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SIHF22N60E-GE3 | Tube | 1,000 |
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SIHF22N60E-GE3 | 47 Weeks | 1,000 |
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SIHF22N60E-GE3 | 39 Weeks | 50 |
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Vishay Intertechnologies SIHF22N60E-E3Transistor: N-MOSFET; unipolar; 600V; 21A; 227W; TO220-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHF22N60E-E3 | 1,000 |
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SIHF22N60E-E3 | Tube | 45 Weeks | 1,000 |
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SIHF22N60E-E3 |
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SIHF22N60E-E3 | Tape & Reel | 1,000 |
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SIHF22N60E-E3 | Reel | 1,000 |
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SIHF22N60E-E3 | 39 Weeks | 50 |
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Vishay Intertechnologies SIHF22N65E-GE3Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 56A; 35W; TO220FP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHF22N65E-GE3 | 1 |
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SIHF22N65E-GE3 | Tape & Reel | 45 Weeks | 1,000 |
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SIHF22N65E-GE3 |
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SIHF22N65E-GE3 | 39 Weeks | 50 |
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Vishay Siliconix SIHF22N60EGE3POWER MOSFET Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHF22N60EGE3 | 1,000 |
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Get Quote | |||||||
Vishay Siliconix SIHF22N60EPOWER MOSFET Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHF22N60E | 700 |
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SIHF22N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SiHF22N60
Abstract: SiHF22N60S-E3 0949 sihF22n6
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sihf22n60s2002/95/eco-220sihf22n60s-e3+4 | |
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Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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sihf22n60e2002/95/eco-22011-mar-11 | |
SiHF22N60
Abstract: SiHF22N60S-E3
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sihf22n60so-2202002/95/ecsihf22n60s-e3+2 | |
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Contextual Info: SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • High EAR Capability 650 RDS(on) max. at 25 °C () VGS = 10 V 0.190 98 • Lower Figure-of-Merit Ron x Qg Qgs (nC) 17 • 100 % Avalanche Tested |
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sihf22n60s2002/95/eco-2202011/65/eu+1 | |
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Contextual Info: SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation one 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • High EAR capability 0.190 Qg max. (nC) 98 • Lower figure-of-merit Ron x Qg Qgs (nC) |
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sihf22n60so-2202002/95/ec2011/65/eu+2 | |
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Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single APPLICATIONS D |
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sihf22n60eo-2202002/95/ec2011/65/eu+2 | |
SIHF22N60EContextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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sihf22n60e2002/95/eco-22011-mar-11 | |
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Contextual Info: SiHF22N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sihf22n60ean6092985m2220m+5 | |
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Contextual Info: SiHF22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * This datasheet provides information about parts that are |
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sihf22n65eo-2202002/95/ec2011/65/eu+2 | |
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Contextual Info: SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • High EAR Capability 650 RDS(on) max. at 25 °C () VGS = 10 V 0.190 98 • Lower Figure-of-Merit Ron x Qg Qgs (nC) 17 • 100 % Avalanche Tested |
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sihf22n60s2002/95/eco-22011-mar-11 | |
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Contextual Info: SiHG22N 6 0 S, SiHP22N 6 0 S, SiHB22N 6 0 S, SiHF22N 6 0 S Super Junction Technology in TO-220, TO-247, TO-220F, and TO-263 Packages Key Benefits • • • • • • • • • • • Dramatic reduction of maximum RDS on at VGS = 10 V: 0.190 Ω Ultra-low gate charge: Qg = 98 nC |
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sihg22nsihp22nsihb22nsihf22n+4 | |
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Contextual Info: SiHF22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * Lead (Pb)-containing terminations are not RoHS-compliant. |
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sihf22n65eo-2202002/95/ec2011/65/eu+2 | |
sihf22n60Contextual Info: SiHF22N60S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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sihf22n60san60902-nov-108250m+6 | |
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Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single D APPLICATIONS |
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sihf22n60eo-2202002/95/ec2011/65/eu+2 | |
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sihf22n60Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Generation Two |
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sihf22n60e2002/95/eco-22011-mar-11+1 | |
SIHF22N60E-GE3Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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sihf22n60eo-2202002/95/ec2011/65/eu+3 | |
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Contextual Info: SiHF22N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sihf22n65ean6094896m9611m+3 | |
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Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Low Figure-of-Merit (FOM) Ron x Qg |
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sihf22n60eo-2202011/65/eu2002/95/ec+1 | |
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Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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sihf22n60e2002/95/eco-22011-mar-11 | |
SIHP22N60S-E3
Abstract: max6265 siliconix mosfet marking to-220
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sihp22n60ssihf22n60so-220sihp22n60s-e3+4 | |
SiHF22N60S-E3Contextual Info: SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability |
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sihf22n60so-2202002/95/ecsihf22n60s-e3+1 | |
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Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Low Figure-of-Merit (FOM) Ron x Qg |
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sihf22n60eo-2202011/65/eu2002/95/ec+1 | |
TO-247 FULLPAK Package
Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
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enerto-247o-247o-220pak/to-263+9 | |
60 SMD 5050 Ultra Bright LEDs
Abstract: MMA 0204 HV - Professional
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vmn-ms6495-101160 smd 5050 ultra bright ledsmma 0204 hv - professional | |