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SIHG22N Datasheets (10)

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Vishay Siliconix

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHG22N50D-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 22A TO-247AC	Original	PDF		8
SIHG22N50D-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 22A TO-247AC	Original	PDF		8
SIHG22N60AE-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 20A TO247AC	Original	PDF	138.33KB
SIHG22N60AEL-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 600V	Original	PDF	131.83KB
SIHG22N60E-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO247AC	Original	PDF		8
SIHG22N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 19A TO247AC	Original	PDF	198.48KB
SIHG22N60E-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO247AC	Original	PDF		8
SIHG22N60EL-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO247AC	Original	PDF	146.35KB
SIHG22N60S-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 22A TO247	Original	PDF		8
SIHG22N65E-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 22A TO-247AC	Original	PDF	194.46KB

SIHG22N Price and Stock

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Vishay Intertechnologies


Vishay Intertechnologies SIHG22N60E-GE3 Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W; TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHG22N60E-GE3				500	1 - 10 - 100 - 1000 $3.00 10000 $3.00	Get Quote
Avnet Americas ()	SIHG22N60E-GE3	Bulk			1	1 $6.64 10 $3.92 100 $3.66 1000 $3.52 10000 $3.52	Get Quote
	SIHG22N60E-GE3	Tape & Reel		45 Weeks	500	1 - 10 - 100 - 1000 $1.97 10000 $1.92	Buy Now
Mouser Electronics	SIHG22N60E-GE3		776			1 $5.71 10 $2.99 100 $2.73 1000 $2.29 10000 $2.29	Buy Now
Newark	SIHG22N60E-GE3	Bulk	109		1	1 $6.64 10 $3.92 100 $3.66 1000 $3.52 10000 $3.52	Buy Now
TTI	SIHG22N60E-GE3	Tube	3,850		50	1 - 10 - 100 $2.76 1000 $2.29 10000 $2.29	Buy Now

Bristol Electronics	SIHG22N60E-GE3		804			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIHG22N60E-GE3			39 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHG22N60AE-GE3 Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHG22N60AE-GE3				1	1 $4.61 10 $4.14 100 $3.29 1000 $3.07 10000 $3.07	Get Quote
Avnet Americas	SIHG22N60AE-GE3	Tape & Reel		45 Weeks	500	1 - 10 - 100 - 1000 $2.15 10000 $2.12	Buy Now
Mouser Electronics	SIHG22N60AE-GE3		298			1 $5.81 10 $3.81 100 $2.84 1000 $2.21 10000 $2.21	Buy Now
TTI	SIHG22N60AE-GE3	Tube			500	1 - 10 - 100 - 1000 $2.21 10000 $2.21	Buy Now
EBV Elektronik	SIHG22N60AE-GE3			39 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHG22N60EF-GE3 Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHG22N60EF-GE3				1	1 $5.19 10 $4.05 100 $3.02 1000 $3.02 10000 $3.02	Get Quote
Avnet Americas	SIHG22N60EF-GE3	Tape & Reel		49 Weeks	500	1 - 10 - 100 - 1000 $2.06 10000 $1.91	Buy Now
Mouser Electronics	SIHG22N60EF-GE3					1 - 10 - 100 $2.62 1000 $2.22 10000 $2.22	Get Quote
Newark	SIHG22N60EF-GE3	Bulk			1	1 $6.41 10 $5.24 100 $3.51 1000 $3.06 10000 $3.06	Buy Now
TTI	SIHG22N60EF-GE3	Tube	1,000		50	1 - 10 - 100 $2.62 1000 $2.05 10000 $2.05	Buy Now

EBV Elektronik	SIHG22N60EF-GE3			42 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHG22N60E-E3 Transistor: N-MOSFET; unipolar; 600V; 21A; 227W; TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHG22N60E-E3				500	1 - 10 - 100 - 1000 $2.54 10000 $2.54	Get Quote
Avnet Americas	SIHG22N60E-E3	Tube		45 Weeks	500	1 - 10 - 100 - 1000 $1.97 10000 $1.92	Buy Now
Mouser Electronics	SIHG22N60E-E3		1,363			1 $5.71 10 $2.99 100 $2.73 1000 $2.29 10000 $2.29	Buy Now
Component Electronics, Inc	SIHG22N60E-E3		33			1 $4.62 10 $4.62 100 $3.46 1000 $3.00 10000 $3.00	Buy Now
EBV Elektronik	SIHG22N60E-E3			39 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHG22N60EL-GE3 Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W; TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHG22N60EL-GE3				500	1 - 10 - 100 - 1000 $2.83 10000 $2.83	Get Quote
Avnet Americas	SIHG22N60EL-GE3	Bulk		45 Weeks	500	1 - 10 - 100 - 1000 $2.44 10000 $2.40	Buy Now
Mouser Electronics	SIHG22N60EL-GE3					1 - 10 - 100 - 1000 $2.39 10000 $2.36	Get Quote
TTI	SIHG22N60EL-GE3	Tube			500	1 - 10 - 100 - 1000 $2.50 10000 $2.50	Buy Now
EBV Elektronik	SIHG22N60EL-GE3			39 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SIHG22N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * This datasheet provides information about parts that are	Original	sihg22n65e o-247ac 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.190 98 Qgs (nC) 17 Qgd (nC) 25 Configuration Single D TO-247AC	Original	sihg22n60s o-247ac 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
SIHG22N60E Contextual Info: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses	Original	sihg22n60e o-247ac 2002/95/ec 11-mar-11	PDF
Contextual Info: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	sihg22n60e 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses	Original	sihg22n60e 2002/95/ec o-247ac 11-mar-11	PDF
Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	sihg22n50d o-247ac 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * This datasheet provides information about parts that are	Original	sihg22n65e o-247ac 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg • 100 % Avalanche Tested	Original	sihg22n60s o-247ac 2002/95/ec 2011/65/eu +112-mar-12	PDF
Contextual Info: SiHG22N 6 0 S, SiHP22N 6 0 S, SiHB22N 6 0 S, SiHF22N 6 0 S Super Junction Technology in TO-220, TO-247, TO-220F, and TO-263 Packages Key Benefits • • • • • • • • • • • Dramatic reduction of maximum RDS on at VGS = 10 V: 0.190 Ω Ultra-low gate charge: Qg = 98 nC	Original	sihg22n sihp22n sihb22n sihf22n +4o-220 o-247 o-220f o-263	PDF
Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	sihg22n50d o-247ac 2011/65/eu 2002/95/ec +112-mar-12	PDF
mosfet 452 Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	sihg22n50d o-247ac 2002/95/ec 2011/65/eu +3js709a 02-oct-12 mosfet 452	PDF
Contextual Info: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	sihg22n60e o-247ac 2011/65/eu 2002/95/ec +112-mar-12	PDF
Contextual Info: SiHG22N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sihg22n65e an609 7589u 6282m +36682m 0918u 23-jul-14	PDF
SiHG22N60EL_RC Contextual Info: SiHG22N60EL_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sihg22n60el an609 7589u 6282m +46682m 0918u 03-nov-14 sihg22n60el_rc	PDF

SiHG22N60S Contextual Info: SiHG22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability	Original	sihg22n60s o-247 2002/95/ec sihg22n60s-e3 +118-jul-08	PDF
SiHG22N60S Contextual Info: SiHG22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Halogen-free According to IEC 61249-2-21 Definition 650 RDS(on) () VGS = 10 V 0.190 98 • High EAR Capability Qgs (nC) 17 • Lower Figure-of-Merit Ron x Qg Qgd (nC)	Original	sihg22n60s o-247ac 2002/95/ec 11-mar-11	PDF
Contextual Info: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg • 100 % Avalanche Tested	Original	sihg22n60s o-247ac 2002/95/ec 11-mar-11	PDF
Contextual Info: SiHG22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Halogen-free According to IEC 61249-2-21 Definition 650 RDS(on) () VGS = 10 V 0.190 98 • High EAR Capability Qgs (nC) 17 • Lower Figure-of-Merit Ron x Qg Qgd (nC)	Original	sihg22n60s 2002/95/ec o-247ac sihg22n60s-e3 +2sihg22n60s-ge3 11-mar-11	PDF
SiHG22N60S Contextual Info: SiHG22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability	Original	sihg22n60s o-247 2002/95/ec sihg22n60s-e3 +118-jul-08	PDF
Contextual Info: SiHG22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability	Original	sihg22n60s o-247 2002/95/ec sihg22n60s-e3 +118-jul-08	PDF
SiHG22N50 Contextual Info: SiHG22N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sihg22n50d an609 9202m 8712m +73875m 7679m 0616m 2369m 4858m 4969u sihg22n50	PDF
sihg22n60e Contextual Info: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	sihg22n60e o-247ac 2011/65/eu 2002/95/ec +112-mar-12	PDF
Contextual Info: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	sihg22n60e o-247ac 2011/65/eu 2002/95/ec +112-mar-12	PDF
Contextual Info: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.190 98 Qgs (nC) 17 Qgd (nC) 25 Configuration Single D TO-247AC	Original	sihg22n60s o-247ac 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF

SIHG22N Search Results

SIHG22N Datasheets (10)

SIHG22N Price and Stock

Vishay Intertechnologies SIHG22N60E-GE3

Vishay Intertechnologies SIHG22N60AE-GE3

Vishay Intertechnologies SIHG22N60EF-GE3

Vishay Intertechnologies SIHG22N60E-E3

Vishay Intertechnologies SIHG22N60EL-GE3

SIHG22N Datasheets Context Search

SIHG22N60E

mosfet 452

SiHG22N60EL_RC

SiHG22N60S

SiHG22N60S

SiHG22N60S

SiHG22N50

sihg22n60e