SIGE Search Results

XPOSYS

Abstract: Germanium Transistor X-GOLD
Contextual Info: BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.2, 2010-06-30 RF & Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8240T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8240T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the

Contextual Info: SGA-4563 Z SGA-4563(Z) DC to 2500MHz, Cascadable SiGe HBT MMIC Amplifier DC to 2500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA-4563 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

Buffer Amplifier Ghz

Abstract: THM2004J
Contextual Info: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,

QUBiC4X

Abstract: BGU7003 BFU725F
Contextual Info: NXP wideband LNA MMIC BGU7003 in SiGe:C process High-quality reception at high RF frequencies Manufactured in NXP’s latest SiGe:C process, this high-frequency RF MMIC delivers high-quality reception with extended battery life. It is a cost-effective, siliconbased alternative to GaAs devices,

GSM 900, 1800, 1900 max power diagram

Abstract: TST0911 TST0911-TSQ TST0911-TSS PSSOP28 pcs cellular power amplifier 1900 mhz gsm amplifier atmel 935
Contextual Info: TST0911 Dualband SiGe Power Amplifier for GSM 900/1800/1900 Description The TST0911 is a monolithic dualband power amplifier IC. The device is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium SiGe process and has been designed for use in GSM-based

SSO20

Abstract: T7024 T7024-DB T7024-PGQ T7024-PGS T7024-TRQ T7024-TRS
Contextual Info: T7024 ISM 2.4 GHz Front End IC Description The T7024 is a monolithic SiGe transmit/ receive front end IC with power amplifier, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like Bluetooth, DECT, IEE 802.11 FHSS

Contextual Info: S e m i c o n d u c t o r s «J / V V fJ U DECT SiGe Front End IC Description The U7004B is a monolithic SiGe transmit/receive front end IC with power amplifier, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT.

ATMEL 935

Abstract: SMD 6 PIN IC VCC GND TST0912 TST0912-TJQ TST0912-TJS
Contextual Info: TST0912 SiGe Power Amplifier for GSM 900 Description The TST0912 is a monolithic integrated power amplifier IC. The device is manufactured using Atmel Wireless & Microcontrollers’ Silicon-Germanium SiGe technology and has been designed for use in GSM 900-MHz mobile phones.

Contextual Info: Tem ic U7006B S e m i c o n d u c t o r s DECT SiGe Front End IC Description The U7006B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-Q matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due

Contextual Info: Temic TST0911 S e m i c o n d u c t o r s Dualband SiGe-Power Amplifier for GSM 900/1800/1900 Description The TST0911 is a monolithic dualband power amplifier IC. The device is manufactured using TEMIC Semiconductors’ advanced Silicon-Germanium SiGe process and has been designed for use in GSM-based

HFA3783

Abstract: ISL3984 ISL3984IR ISL3984IR96 TB379 TB389 HFA3863 prism 2.5
Contextual Info: ISL3984 Data Sheet July 2003 FN4862.6 2.4GHz Power Amplifier and Detector Features The ISL3984 is a 2.4GHz monolithic SiGe power amplifier designed to operate in the ISM band. It features two low-voltage single supply stages. Cascaded, they deliver 18dBm Typical output power for the

Contextual Info: Temic TST0922 S e m i c o n d u c t o r s SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium

AN-075

Abstract: A64 marking amplifier MMIC A64 marking SGA-6486z SGA-6486 marking 64z MMIC "A64" marking
Contextual Info: SGA-6486 Product Description The SGA-6486 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes

BFU725F

Abstract: BGU7003 SOT-891
Contextual Info: NXP의 SiGe:C 공정이 BGU7003 낳은 광대역 LNA MMIC BGU7003 RF 고주파수 대역에서 뛰어난 수신감도 NXP의 최신 SiGe:C 공정으로 생산된 이 고주파 RF MMIC는 수신감도가 매우 우수하고 배터 리의 수명이 향상된 제품입니다. GaAs를 대체하는 실리콘 기반의 기기로서 비용 효율이 크고,

Contextual Info: PreliminaryData Sheet PD5754T7A R09DS0012EJ0100 Rev.1.00 Dec 22, 2010 SiGe/CMOS Integrated Circuit 4 x 2 IF Switch Matrix with Gain and Tone/Voltage Controller FEATURES • 4 independent IF channels, integral switching to channel input to either channel output

SGC-4486Z

Abstract: sgc- sot-86
Contextual Info: SGC-4486Z SGC-4486Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-86 Product Description Features RFMD’s SGC-4486Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The

SDM-09060-B1F

Abstract: TRANSISTORS BJT with low gate voltage NOTE-AN054
Contextual Info: SDM-09060-B1F Y SDM-09060B1F(Y)Low Noise, High Gain SiGe HBT 925 MHz to 960 MHz CLASS AB 65 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: B Product Description Features „ „ „ Available in RoHS Compliant

A64Z

Abstract: SGA-6489 SGA-6489 A64Z MARKING A64 SOT-89 sga6489 a64 marking code 5.1 amplifier schematic A64 marking amplifier marking A64 SGA6489Z
Contextual Info: SGA-6489 Z SGA-6489(Z) Low Noise, High Gain SiGe HBT DC to 3500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SGA-6489 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

4463Z

Abstract: SGC-4463Z
Contextual Info: SGC-4463Z SGC-4463Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGC-4463Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The

SGB-2233Z

Abstract: SGB-2233
Contextual Info: SGB-2233 Z DC to 4.5GHz Active Bias Gain Block SGB-2233(Z) Preliminary DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides

SGB-6433Z

Abstract: SGB-6433
Contextual Info: SGB-6433 Z SGB-6433(Z) DC to 3.5GHz ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-6433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides

"Gain Blocks"

Abstract: Gain Blocks DC-3000 DB135 sga-55xx
Contextual Info: RFMD SGA Gain Blocks Cascadable SiGe HBT MMIC Amplifiers RFMD’s series of SGA gain blocks are high-performance SiGe HBT MMIC amplifiers which operate from a single voltage supply. A Darlington configuration featuring 1 micron emitters provides high Ft and excellent thermal performance. Cancellation of emitter

SGA-2386

Abstract: SGA-2386Z rfmd mmic
Contextual Info: SGA-2386 Z SGA-2386(Z) DC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-86 Product Description Features The SGA-2386 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and