SIC SEMICONDUCTORS Search Results
SIC SEMICONDUCTORS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MG800FXF1JMS3 |
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET | Datasheet | ||
MG800FXF1ZMS3 |
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD | Datasheet | ||
MG400Q2YMS3 |
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N-ch SiC MOSFET Module, 1200 V, 400 A, 2-153A1A | Datasheet | ||
MG250V2YMS3 |
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N-ch SiC MOSFET Module, 1700 V, 250 A, 2-153A1A | Datasheet | ||
MG250YD2YMS3 |
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N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A | Datasheet |
SIC SEMICONDUCTORS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TLWBG76
Abstract: TLWB76 TLWR76 TLWTG76 TLWW76 TLWY76
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TLWR76. TLWY76. TLWTG76. TLWBG76. TLWB76. TLWW76. D-74025 10-May-00 TLWBG76 TLWB76 TLWR76 TLWTG76 TLWW76 TLWY76 | |
TLMB3140
Abstract: TLMBG3100 TLMTG3100
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TLMB/TLMBG/TLMTG31. TLMB3140 TLMBG3100 TLMTG3100 D-74025 16-Mar-01 TLMB3140 TLMBG3100 TLMTG3100 | |
SEMISOUTH
Abstract: 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045
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-55oC 200oC 260oC* MIL-PRF-19500 O-257) O-257 SEMISOUTH 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045 | |
Contextual Info: Advantages of SiC Schottky Diodes in Fast Switching Power Electronics Solutions Michael Frisch, Vincotech GmbH, Unterhaching/Germany SiC is discussed as a future high performance replacement of the silicon power components. The new technology enables products with almost ideal behaviour. Currently, SiC Schottky rectifiers are already |
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25kHz. 50kHz, | |
515 TCI
Abstract: LED wavelength 440 smd TLMB3140 TLMBG3100 TLMTG3100 16-MAR-01
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TLMB/TLMBG/TLMTG31. TLMB3140 TLMBG3100 TLMTG3100 D-74025 16-Mar-01 515 TCI LED wavelength 440 smd TLMB3140 TLMBG3100 TLMTG3100 16-MAR-01 | |
Cree SiC diode die
Abstract: snubber CIRCUITS mosfet ixys dsei 500 watt smps circuit diagram FULL WAVE mosfet RECTIFIER CIRCUITS CPWR-AN01 IXYS DSEI 12-06A Cree SiC MOSFET 4600 mosfet 6A irfp450 mosfet
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200-V CPWR-AN01, Cree SiC diode die snubber CIRCUITS mosfet ixys dsei 500 watt smps circuit diagram FULL WAVE mosfet RECTIFIER CIRCUITS CPWR-AN01 IXYS DSEI 12-06A Cree SiC MOSFET 4600 mosfet 6A irfp450 mosfet | |
TLMB310
Abstract: TLMB3100 TLMB3101 TLMB3104 TLMB3106
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TLMB310. D-74025 29-Sep-00 TLMB310 TLMB3100 TLMB3101 TLMB3104 TLMB3106 | |
TLHB580
Abstract: TLHB5800 TLHB5801
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TLHB580. D-74025 04-Oct-00 TLHB580 TLHB5800 TLHB5801 | |
TLCB5800
Abstract: TLCR5800 TLCTG5800 TLCY5800
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TLCR58. TLCY58. TLCTG58. TLCB58. D-74025 05-Mar-02 TLCB5800 TLCR5800 TLCTG5800 TLCY5800 | |
TLHB420
Abstract: TLHB4200 TLHB4201
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TLHB420. D-74025 04-Oct-00 TLHB420 TLHB4200 TLHB4201 | |
TLCY5800
Abstract: TLCB5800 TLCR5800 TLCTG5800
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TLCR58. TLCY58. TLCTG58. TLCB58. D-74025 05-Mar-02 TLCY5800 TLCB5800 TLCR5800 TLCTG5800 | |
TLCB5100
Abstract: TLCR5100 TLCTG5100 TLCY5100
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TLCR51. TLCY51. TLCTG51. TLCB51. D-74025 05-Mar-02 TLCB5100 TLCR5100 TLCTG5100 TLCY5100 | |
TLCB5100
Abstract: TLCR5100 TLCTG5100 TLCY5100 05-MAR-02 TCVF
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TLCR51. TLCY51. TLCTG51. TLCB51. D-74025 05-Mar-02 TLCB5100 TLCR5100 TLCTG5100 TLCY5100 05-MAR-02 TCVF | |
TLHB540
Abstract: TLHB5400 TLHB5401
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TLHB540. D-74025 04-Oct-00 TLHB540 TLHB5400 TLHB5401 | |
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TLHB510
Abstract: TLHB5100 TLHB5101 TLHB5102
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TLHB510. D-74025 04-Oct-00 TLHB510 TLHB5100 TLHB5101 TLHB5102 | |
CCM PFC inductor analysis
Abstract: PFC design what is THERMAL RUNAWAY IN RECTIFIER MOSFET boost pfc operate in ccm
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PCIM-20-CU CCM PFC inductor analysis PFC design what is THERMAL RUNAWAY IN RECTIFIER MOSFET boost pfc operate in ccm | |
15846
Abstract: TLHB540 TLHB5400 TLHB5401
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TLHB540. D-74025 04-Feb-99 15846 TLHB540 TLHB5400 TLHB5401 | |
Contextual Info: TLHB540. Vishay Telefunken High Efficiency Blue LED, ø 5 mm Tinted Diffused Package Color Blue Type TLHB540. Technology Angle of Half Intensity ±ö 30° GaN on SiC Description This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing |
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TLHB540. D-74025 04-Feb-99 | |
Contextual Info: SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Data Sheet lOutline VDSS 1200V RDS on (Typ.) 80mW ID 40A PD 262W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery |
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SCH2080KE O-247 R1102B | |
Contextual Info: TLMB310. Vishay Telefunken SMD LED in P–LCC–2 Package Color Blue Type TLMB310. Technology GaN on SiC Angle of Half Intensity ±ö 60° Description This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing demand for high efficiency blue LEDs. |
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TLMB310. D-74025 04-Feb-99 | |
Contextual Info: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery |
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SCH2080KE O-247 R1102B | |
TLHB420
Abstract: TLHB4200 TLHB4201
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TLHB420. D-74025 04-Feb-99 TLHB420 TLHB4200 TLHB4201 | |
TLHB440
Abstract: TLHB4400 TLHB4401
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TLHB440. D-74025 04-Feb-99 TLHB440 TLHB4400 TLHB4401 | |
TLMB310
Abstract: TLMB3100 TLMB3101 TLMB3104 TLMB3106
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TLMB310. D-74025 13-Jul-99 TLMB310 TLMB3100 TLMB3101 TLMB3104 TLMB3106 |