SIC IGBT Search Results

Contextual Info: Application Note AN-10A: Driving SiC Junction Transistors SJT with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept Introduction GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJT) with current ratings ranging from 4 A to 16 A. SiC

SEMISOUTH

Abstract: 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045
Contextual Info: ADVANCED INFORMATION Silicon Carbide SiC Schottky Diodes and JFETs Die Inside Why SiC for your Military, Aerospace SiC JFETs • 1200V & 1700V Breakdown Voltages and Down-hole Applications? • Extreme Performance • Operation Beyond Mil Temp - Elevated Temp Range (TJ), -55oC to +200oC

SCS205KG

Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
Contextual Info: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.

APT9402

Contextual Info: TECHNOLOGY Breakthrough High Temperature Electrical Performance of SiC “Super” Junction Transistors SiC are being explored for power electronic conversion applications The SiC based 1200 V/220 mÙ Super Junction Transistors SJTs feature high temperature (> 300 °C) operation capability, faster switching transitions (< 20 ns), extremely

FF600R12IS4F

Contextual Info: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2 und SiC Diode für hochfrequentes Schalten PrimePACK™2 with fast IGBT2 and SiC diode for high switching frequency IGBT-Wechselrichter / IGBT-inverter

Contextual Info: GA35XCP12-247 IGBT/SiC Diode Co-pack Features Package • Optimal Punch Through OPT technology • SiC freewheeling diode • Positive temperature coefficient for easy paralleling • Extremely fast switching speeds • Temperature independent switching behavior of SiC rectifier

FF600R12IS4F

Contextual Info: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2 und SiC Diode für hochfrequentes Schalten und NTC PrimePACK™2 module with fast IGBT2 and SiC Diode for high frequency switching and NTC

Contextual Info: GA35XCP12-247 IGBT/SiC Diode Co-pack Features Package • Optimal Punch Through OPT technology • SiC freewheeling diode • Positive temperature coefficient for easy paralleling • Extremely fast switching speeds • Temperature independent switching behavior of SiC rectifier

Contextual Info: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2, SiC Diode und NTC für hochfrequentes Schalten PrimePACK™2 with fast IGBT2, SiC diode and NTC for high switching frequency IGBT-Wechselrichter / IGBT-inverter

Contextual Info: Hybrid Si-IGBT/SiC Rectifier co-packs and SiC JBS Rectifiers offering superior surge current capability and reduced power losses S.G. Sundaresana,*, C. Sturdevant, H. Issa, M. Marripelly, E. Lieser and R. Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA.

Contextual Info: GB100XCP12-227 IGBT/SiC Diode Co-pack VCES = ICM = VCE SAT = Features Package •         RoHS Compliant Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds

Contextual Info: SPM1005 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5287, Rev. C 600 VOLT, 16 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE BRIDGE MODULE WITH SiC FREEWHEELING DIODE Features • SiC Free wheel diode – zero reverse recovery loss  Isolated base plate  Low thermal impedance

CW2013

Abstract: sic marking e6
Contextual Info: SENSITRON SEMICONDUCTOR SPM1001 Technical Data DATASHEET 5361, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: • 600 VOLT, 50 AMP, THREE PHASE IGBT BRIDGE  SILICON CARBIDE SiC 20A 600V ANTI PARALLEL DIODES – ZERO RECOVERY AND NO

Contextual Info: GB100XCP12-227 IGBT/SiC Diode Co-pack VCES = ICM = VCE SAT = Features Package •         RoHS Compliant Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds

Contextual Info: GA100JT12-227 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: 10-PZ123BA080MR-M909L28Y flow 3xBOOST0-SiC 1200V/80mΩ Features flow 0 12mm housing ● SiC-Power MOSFET´s and Schottky Diodes ● 3 channel boost topology ● Ultra Low Inductance with integrated DC-capacitors ● Switching frequency >100kHz ●Temperature sensor

solar inverters circuit diagram

Abstract: 10 amp smps SMPS CIRCUIT DIAGRAM USING TRANSISTORS solar inverter circuit 220AC INVERTER circuit diagram of high power smps STPSC806D 15 amp diodes 40 v 20 amp, diode STPSC606D
Contextual Info: 600 V SiC diodes PFC boost diodes in high-power SMPS and freewheeling diodes in high-frequency inverters Targeting the industrial and PFC functions in SMPS applications, these SiC structured Schottky diodes exhibit a 4 times better dynamic characteristic and 15% less

Contextual Info: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: GA10SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: Application Note AN-10B: Driving SiC Junction Transistors SJT : Two-Level Gate Drive Concept Introduction Two-Level SJT Gate Drive Circuit GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJTs) with current ratings ranging from 3 A to 50

solar inverters circuit diagram

Abstract: 10 amp smps circuit diagram of high power smps solar power inverter Circuit diagram SMPS CIRCUIT DIAGRAM 220AC INVERTER solar inverter circuit 15 amp diodes smps inverter circuit emi filter inverter motor supply
Contextual Info: 600 V SiC diodes PFC boost diodes in high-power SMPS and freewheeling diodes in high-frequency inverters Targeting the industrial and PFC functions in SMPS applications, these SiC structured Schottky diodes exhibit a 4 times better dynamic characteristic and 15% less

Contextual Info: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier