SIA911ADJ Search Results

Contextual Info: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET

Contextual Info: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET

Contextual Info: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET

SiA911ADJ

Abstract: SiA911DJ SiA911DJ-T1-GE3
Contextual Info: Specification Comparison Vishay Siliconix SiA911ADJ vs. SiA911DJ Description: Package: Pin Out: Dual P-Channel, 20-V D-S MOSFET PowerPAK SC-70 Identical Part Number Replacements: SiA911ADJ-T1-GE3 replaces SiA911DJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

SC-70-6

Abstract: SiA911ADJ
Contextual Info: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET

Contextual Info: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET

SiA911ADJ

Contextual Info: SPICE Device Model SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SC-70-6

Abstract: SiA911ADJ Qrr20
Contextual Info: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET

6852

Abstract: 8829 mosfet data sheet transistor 2030 U 8047 W 6852 AN609 SiA911ADJ
Contextual Info: SiA911ADJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

NX3008

Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
Contextual Info: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

SiA427DJ

Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs