SIA429DJ Search Results

Contextual Info: SPICE Device Model SiA429DJT www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SiA429DJ

Abstract: 454105
Contextual Info: SiA429DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21

SiA429DJT

Abstract: 67110
Contextual Info: SPICE Device Model SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21

NX3008

Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
Contextual Info: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1

SiA427DJ

Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

SiB431EDK

Contextual Info: Portable Media Player Table of Contents AUDIO, Headphones. 3 AUDIO,