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SI8802DB Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI8802DB-T2-E1		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 8V MICROFOOT	Original	PDF		8

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Vishay Intertechnologies SI8802DB-T2-E1 Trans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SI8802DB-T2-E1		2,960		11	1 - 10 - 100 $0.58 1000 $0.58 10000 $0.58	Buy Now
Avnet Americas	SI8802DB-T2-E1	Tape & Reel		14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.12	Buy Now
Mouser Electronics	SI8802DB-T2-E1		845			1 $0.70 10 $0.31 100 $0.28 1000 $0.21 10000 $0.13	Buy Now
Arrow Electronics	SI8802DB-T2-E1	Cut Strips	2,960		1	1 $0.58 10 $0.58 100 $0.58 1000 $0.58 10000 $0.58	Buy Now
Newark ()	SI8802DB-T2-E1	Tape & Reel	614		100	1 - 10 - 100 $0.32 1000 $0.21 10000 $0.21	Buy Now
	SI8802DB-T2-E1	Cut Tape	614		5	1 - 10 $0.44 100 $0.32 1000 $0.21 10000 $0.21	Buy Now

TTI	SI8802DB-T2-E1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.12	Buy Now
Quest Components	SI8802DB-T2-E1		960			1 $0.70 10 $0.70 100 $0.21 1000 $0.14 10000 $0.14	Buy Now
Avnet Asia	SI8802DB-T2-E1			16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.34	Buy Now
EBV Elektronik	SI8802DB-T2-E1			15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI8802DB-T2-E1 SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.5A I(D), 8V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI8802DB-T2-E1		210			1 $0.25 10 $0.25 100 $0.17 1000 $0.17 10000 $0.17	Buy Now
Vishay Intertechnologies SI8802DBT2E1 N-CHANNEL 8 V (D-S) MOSFET Small Signal Field-Effect Transistor, 3.5A I(D), 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI8802DBT2E1		9,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI8802DB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
si8802 Contextual Info: Si8802DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si8802DB AN609, 1060u 0709m 9256m 5154u 7987u 8059m 9703m 16-Jun-11 si8802	PDF
Contextual Info: New Product Si8802DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1.0 • Halogen-free According to IEC 61249-2-21	Original	Si8802DB 2002/95/EC 11-Mar-11	PDF
Contextual Info: New Product Si8802DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1 • • •	Original	Si8802DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: SPICE Device Model Si8802DB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si8802DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si8802 Contextual Info: SPICE Device Model Si8802DB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si8802DB 11-Mar-11 si8802	PDF
Contextual Info: Si8802DB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 • Small 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V	Original	Si8802DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: New Product Si8802DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1 • • •	Original	Si8802DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si8802 Abstract: si88 Contextual Info: New Product Si8802DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1 • • •	Original	Si8802DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8802 si88	PDF
si8802 Contextual Info: New Product Si8802DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1.0 • Halogen-free According to IEC 61249-2-21	Original	Si8802DB 2002/95/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 si8802	PDF
SI-8100D Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,	Original	Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB	PDF
SI1489EDH Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems	Original	SiA920DJ SC-70 SiB914DK SC-75 Si1011X Si8805EDB com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1402 SI1489EDH	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
SiB914 Abstract: SiA427DJ si2329ds si8802 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS	Original	SC-70 SC-75 com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1209 SiB914 SiA427DJ si2329ds si8802	PDF
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm	Original	Si8489EDB Si8902AEDB VMN-PT0107-1402	PDF