SI7866ADP Search Results

SI7866ADP-T1-E3

Abstract: Si7866ADP Si7866DP-T1 74053 SI7866DP Si7866DP-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si7866ADP vs. Si7866DP Description: N-Channel, 20 V D-S MOSFET Package: PowerPAK SO-8 Pin Out: Identical Part Number Replacements: Si7866ADP-T1-E3 Replaces Si7866DP-T1-E3 Si7866ADP-T1-E3 Replaces Si7866DP-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Contextual Info: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET

Si7866ADP-T1-E3

Abstract: Si7866ADP-T1-GE3 Si7866ADP A1-2539 POWER MOSFET Rise Time 1 ns
Contextual Info: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET

SI7866ADP-T1-E3

Abstract: Si7866ADP
Contextual Info: Si7866ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ) 39 nC PowerPAK SO-8 COMPLIANT • Low-Side MOSFET in Synchronous Buck DC/DC Converters in Desktops

A 0503

Abstract: MOSFET 913 AN609 Si7866ADP
Contextual Info: Si7866ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Diode RL 4B

Abstract: Si7866ADP SI7866ADP-T1-E3
Contextual Info: Si7866ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID rDS(on) (W) 20 (A)a 0.0024 @ VGS = 10 V 40 0.0030 @ VGS = 4.5 V 40 D D D D D Qg (Typ) 39 nC TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized

Si7866ADP

Abstract: Si7866ADP-T1-E3 Si7866ADP-T1-GE3
Contextual Info: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET

Si7866ADP

Contextual Info: SPICE Device Model Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

t2d 76 diode value

Abstract: 2RSTPE330M9 LTC3854DDB 3854 ltc3608 LTC3854EMSE LTC3854 LTC3854E t2d 76 diode LTC3854I
Contextual Info: LTC3854 Small Footprint, Wide VIN Range Synchronous Step-Down DC/DC Controller Description Features n n n n n n n n n n n n n n Wide Operating VIN Range: 4.5V to 38V RSENSE or DCR Current Sensing ±1% 0.8V Reference Accuracy Over Temperature 400kHz Switching Frequency

T2D 98 DIODE

Abstract: T2D 97 diode
Contextual Info: LTC3854 Small Footprint, Wide VIN Range Synchronous Step-Down DC/DC Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n The LTC3854 is a high performance synchronous stepdown switching DC/DC controller that drives an all Nchannel synchronous power MOSFET stage.

q406 transistor

Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

Power MOSFET

Abstract: mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET
Contextual Info: POL Power Table of Contents BOOTSTRAP, Diodes. 3 CONTROLLERS, Current Sense Resistors. 4

bridge rectifier 24V AC to 24v dc

Abstract: 1N5408 smd diodes GSIB1560
Contextual Info: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4

LTC3854DDB

Abstract: LTC3854 LTC3854E LTC3854EDDB LTC3854EMSE LTC3854I LTC3854IDDB LTC3854IMSE LTC3878 energy meter ic 0038
Contextual Info: LTC3854 Small Footprint, Wide VIN Range Synchronous Step-Down DC/DC Controller DESCRIPTION FEATURES Wide Operating VIN Range: 4.5V to 38V RSENSE or DCR Current Sensing ±1% 0.8V Reference Accuracy Over Temperature 400kHz Switching Frequency Dual N-channel MOSFET Synchronous Drive

Contextual Info: Using the UCD3138PSFBEVM-027 User's Guide Literature Number: SLUUAK4 August 2013 www.ti.com WARNING Always follow TI’s set-up and application instructions, including use of all interface components within their recommended electrical rated voltage and power limits. Always use electrical safety precautions to help

gs 069

Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
Contextual Info: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no