SI7866 Search Results

4800 mosfet

Abstract: Si7866DP
Contextual Info: Si7866DP New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low rDS(on) D PWM (Qgd and RG) Optimized PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00325 @ VGS = 4.5 V 25 APPLICATIONS D Low-Side MOSFET in Synchronous Buck

Si7866DP

Contextual Info: Si7866DP New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low rDS(on) D PWM (Qgd and RG) Optimized PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00375 @ VGS = 4.5 V 25 APPLICATIONS D Low-Side MOSFET in Synchronous Buck

SI7866ADP-T1-E3

Abstract: Si7866ADP Si7866DP-T1 74053 SI7866DP Si7866DP-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si7866ADP vs. Si7866DP Description: N-Channel, 20 V D-S MOSFET Package: PowerPAK SO-8 Pin Out: Identical Part Number Replacements: Si7866ADP-T1-E3 Replaces Si7866DP-T1-E3 Si7866ADP-T1-E3 Replaces Si7866DP-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Si7866ADP

Abstract: Si7866ADP-T1-E3 Si7866ADP-T1-GE3
Contextual Info: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET

Contextual Info: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET

Contextual Info: Si7866ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID rDS(on) (W) 20 (A)a 0.0024 @ VGS = 10 V 40 0.0030 @ VGS = 4.5 V 40 D D D D D Qg (Typ) 39 nC TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized

Contextual Info: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET

Contextual Info: Si7866DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00375 @ VGS = 4.5 V 25 TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized 100% Rg Tested APPLICATIONS

Si7866DP

Abstract: 29a65
Contextual Info: \\\ SPICE Device Model Si7866DP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7866ADP-T1-E3

Abstract: Si7866ADP-T1-GE3 Si7866ADP A1-2539 POWER MOSFET Rise Time 1 ns
Contextual Info: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET

SI7866ADP-T1-E3

Abstract: Si7866ADP
Contextual Info: Si7866ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ) 39 nC PowerPAK SO-8 COMPLIANT • Low-Side MOSFET in Synchronous Buck DC/DC Converters in Desktops

A 0503

Abstract: MOSFET 913 AN609 Si7866ADP
Contextual Info: Si7866ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si7866DP

Abstract: Si7866DP-T1
Contextual Info: Si7866DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00375 @ VGS = 4.5 V 25 TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized 100% Rg Tested APPLICATIONS

Contextual Info: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET

Si7866DP

Abstract: Si7866DP-T1
Contextual Info: Si7866DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00375 @ VGS = 4.5 V 25 TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized 100% Rg Tested APPLICATIONS

Diode RL 4B

Abstract: Si7866ADP SI7866ADP-T1-E3
Contextual Info: Si7866ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID rDS(on) (W) 20 (A)a 0.0024 @ VGS = 10 V 40 0.0030 @ VGS = 4.5 V 40 D D D D D Qg (Typ) 39 nC TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized

Si7866ADP

Abstract: Si7866ADP-T1-E3 Si7866ADP-T1-GE3
Contextual Info: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET

Si7866ADP

Contextual Info: SPICE Device Model Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

t2d 76 diode value

Abstract: 2RSTPE330M9 LTC3854DDB 3854 ltc3608 LTC3854EMSE LTC3854 LTC3854E t2d 76 diode LTC3854I
Contextual Info: LTC3854 Small Footprint, Wide VIN Range Synchronous Step-Down DC/DC Controller Description Features n n n n n n n n n n n n n n Wide Operating VIN Range: 4.5V to 38V RSENSE or DCR Current Sensing ±1% 0.8V Reference Accuracy Over Temperature 400kHz Switching Frequency

HA400

Abstract: SI3475 pcb 200W audio amplifier XfR 3MH CMD2836 NTCG164BH103H siliconix application 1976 LM5027 3104-2-00-01-00-00-08-0 da2319
Contextual Info: National Semiconductor Application Note 1976 Terry Allinder August 19, 2009 Introduction Theory of Operation The LM5027 evaluation board is designed to provide the design engineer with a fully functional power converter based on the Active Clamp Forward topology to evaluate the

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

SL04-GS08

Abstract: capacitor 100nf 25v 0805 capacitor 100nf 16v 10 0603 x7r vishay TPSD686M020R0070 capacitor 100nf 16v 10 0603 x7r vishay datasheet capacitor 100nf 16v 10% 0603 x7r vishay EPAD-MSOP-10 Vitramon MIC2159 SD103AWS-V-GS08
Contextual Info: MIC2159 Evaluation Board 400kHz ePAD MSOP Synchronous Buck Controller General Description The MIC2159 is a high-efficiency, simple to use 400kHz PWM synchronous buck control IC housed in a small ePAD MSOP-10 package. The MIC2159 allows compact DC-to-DC solutions with a minimal external component

Contextual Info: LM5034 www.ti.com SNVS347A – FEBRUARY 2005 – REVISED APRIL 2013 LM5034 High Voltage Dual Interleaved Current Mode Controller with Active Clamp Check for Samples: LM5034 FEATURES APPLICATIONS • • • • 1 2 • • • • • • • • • • •

5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical