SI5000 Search Results

50004

Contextual Info: 1CT • 1CT lOOOpF, 2KV ELECTRICAL SPECIFICATIONS« NDTES 1.0 TURNS RATID P 4 -P 5 -P 6 ■ ( J 3 -J 6 ) (P 3 -P 2 -P 1 ) ' (J 1 -J 2 ) 2.0 INDUCTANCE (P 6 -P 4 ) 1,0 PINS WITHOUT ELECTRICAL CDNNECTIDN ARE DMITTED, 1CT i 1CT± 3 / 1CT i 1CT ± 37. 350uH MIN, e 0,1V ,lOOKHz, 8nA DC

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

Contextual Info: -tSUUUL/ 1CT : 1CT NDTES ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 4 - P 5 - P 6 (P 3 -P 2 -P 1 ) : (J 3 -J 6 ) : (J 1 -J 2 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE: 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 )

Contextual Info: IStewartr /////////// Connector R E V IS IO N CHANGES Stewart Connector Systems, Inc. XO Insilco Technologies Group AS DRAWN 11118 Susquehanna Trail South Glen Rock, PA 1 7 3 27-9 1 9 9 717 2 3 5 -7 5 1 2 Fax: (717) 2 3 5 -7 9 5 4 PART NO.: SI-50006 EIGHT CONTACT, TEN POSITION M a g Ja c k CONNECTOR

din 5901 rails

Abstract: MCMurdo 801 DPAF GASKET s1854 microdot 10-32 female connector ZDB25P1AKN SS-60300-010 IEC-1076-4-101 DB-25S-A191 RJ11 6p4c
Contextual Info: 1797 Technical portal and online community for Design Engineers - www.element-14.com Connectors - Signal & Data Page 1875 1829 1856 1843 1854 1877 1827 1825 1811 1805 1798 1821 1821 1826 1812 1814 1801 1817 1802 1817 1810 1803 1819 1804 1797 1811 DIN41612 Class 1, 2 and 3 . . . . . . . . . . . . . . . . . .

Contextual Info: 1CT • 1CT lOOOpF, 2KV ELECTRICAL SPECIFICATIONS« NDTES 1.0 TURNS RATID P 4 -P 5 -P 6 ■ ( J 3 -J 6 ) (P 3 -P 2 -P 1 ) ' (J 1 -J 2 ) 2.0 INDUCTANCE (P 6 -P 4 ) 1,0 P I N S W I T H O U T E L E C T R I C A L C D N N EC TID N A R E DM ITTED, 1CT i 1CT± 3 /

LF8221X

Abstract: si 13003 P35-152-19W9 RJSE1R5310A lfe8731 HFJ11-RP26E lfe8505 RJSE1R8090B-R delta lfe8505 HFJ11-RP26E-L12RL
Contextual Info: Delta Electronica, Inc. - Networking Component Cross Reference Amphenol RJMG231116230EL Description RLUE2060-H20 RJ-45 Integrated Connector Module with USB, 10/100/1000 base Belfuse S811-1X1T-0 0810-2H4R-28 0810-H2X4R-HE-F 0811-1X1T-03 0811-1X4T-04 0811-1X4T-04

Contextual Info: 1CT i 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT O CHASSIS GND 1 TX+ TXRX+ RX- lOOOpF, 2 K V NDTES ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO : P 4 - P 5 - P 6 : ( J 3 - J 6 ) (P 3 -P 2 -P 1 ) : (J1 -J2 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE : 350uH MIN. @ 0.1V,

Contextual Info: R E V IS IO N CHANGES Stew art C onnector System s, Inc. Insilco T echnologies Group IStewart Connector r/////////// XO AS DRAWN .126 TO .123 WAS .128 TO .125 11118 Susquehanna Trail South Glen Rock, PA 1 7 3 2 7 - 9 1 9 9 7 1 7 2 3 5 - 7 5 1 2 Fax: (7 1 7 ) 2 3 5 - 7 9 5 4

Contextual Info: MagJack HT SI-50000 Series • Full magnetic options including: transformers, chokes, termination resistors, and capacitors • Reflow compatible • Tab-up design minimizes EMI/RFI • Optional integrated light pipes/LED system • Identical form factor as

Contextual Info: 1CT : 1CT TD+ TD- RCT J1 J2 J3 TX- J4 J5 J6 J7 J8 RX- TX+ RX+ lOOOpF, 2KV N DT E S ELECTRICAL SPECIFICATIONS: 1,0 P I N S 1.0 TURNS RATIO: P 4 - P 5 - P 6 : ( J 3 - J6 ) (P 3 - P 2 - P 1 ) : ( J 1 - J2 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE: 350uH MIN.

Contextual Info: 1CT I 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT TX+ TXRX+ RX- lOOOpF, 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TU RN S RATIO: P 4 - P 5 - P 6 : ( J 3 - J 6 ) ( P 3 - P 2 - P 1 ) : (J1 -J2 ) 1CT : 1C T ± 3 % 1CT : 1CT ± 3 % 1,0 PINS V I T H D U T E L E C T R I C A L

si-50001

Abstract: PSL 6
Contextual Info: 1CT i 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT O CHASSIS GND 1 TX+ TXRX+ RX- lO O O p F, 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO : P 4 - P 5 - P 6 (P 3 -P 2 -P 1 ) 1,0 PINS WITHDUT E L E C T R I C A L CDNNECTIDN ARE DMITTED, 2.0 INDUCTANCE :

Contextual Info: SI Series MagJack Single-Port Jacks Modular Jacks With Integrated Magnetics Features/Benefits i • Internal magnetic components protect signal from noise • Frees up board real estate • Single, multiport and stacked configurations • LED and high and extended

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED "PROPRIETARY" TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/95/EC ELECTRICAL CH ARACTERISTICS @ 25°C PIN1-RJ1, PIN2-RJ2, PIN3-RJ3,

Contextual Info: 1CT : 1CT TD+ TD- RCT CHASSIS GND J1 J2 J3 TX- J4 J5 J6 J7 J8 RX- TX+ RX+ lOOOpF, 2 K V E L E C T R I C A L SPE CIFICA TIO N S: 1.0 TURNS RATIO P 4 - P 5 - P 6 (P3-P2-P1) NDTES 1,0 PINS VITHDU T E L E C T R I C A L 1CT : 1CT± 37. i (J3-J6) C O N N E CT I O N

Contextual Info: ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: 1.0 TURNS RATIO: P 6 - P 8 - P 3 : ( J 6 - J 3 ) (P 2 -P 7 -P 1 ) : (J 2 -J 1 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE: 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 )

Contextual Info: lOOOPf, 2 K VD C NDTES ELECTRICAL SPECIFICATIONS: 1.0 PIN S WITHDUT E L E C T R IC A L CONNECTION ARE EMITTED, 1.0 TURNS RATIO: P 4 - P 5 - P 6 : (J 3 -J 6 ) ( P 3 - P 2 - P 1 ) : (J 1 -J 2 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE: 350uH MIN. @ 0.1V, 100KHz, 8mA DC Bias

SI-50009-F

Abstract: 50009
Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED "PROPRIETARY" TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/95/EC ELECTRICAL CHARACTERISTICS @ 25°C PINS PIN1-RJ1, PIN2-RJ2, PIN3-RJ3,

Contextual Info: 1CT i 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT O CHASSIS GND 1 TX+ TXRX+ RX- lO O O p F, 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO : P 4 - P 5 - P 6 (P 3 -P 2 -P 1 ) 1,0 PINS WITHDUT E L E C T R IC A L CDNNECTIDN ARE DMITTED, 2.0 INDUCTANCE :

SI5000

Contextual Info: 1CT ! 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT TX+ TXRX+ RX- lOOOpF, 2KV NDTES ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO : P 4 - P 5 - P 6 : (J 3 -J6 ) ( P 3 - P 2 - P 1 ) : (J 1 -J2 ) 1CT 1CT 2.0 INDUCTANCE : 350uH MIN. @ 0.1V, 350uH MIN. @ 0.1V, 3.0

Contextual Info: 1CT : 1CT NDTES ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 4 - P 5 - P 6 (P 3 -P 2 -P 1 : (J 3 -J 6 : (J 1 -J 2 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE: 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 ) (P 6 -P 4 (P 3 -P 1

sud*50n025-06p

Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
Contextual Info: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m

Contextual Info: ELECTRICAL SPECIFICATIONS: NDTES OPERATING TEMPERATURE RANGE: 1 .0 TURNS RATIO : P 6 - P 8 - P 3 (P 2 -P 7 -P 1 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE: 5 .0 6 .0 : (J 6 -J 3 ) : (J 2 -J 1 ) TO + 8 5 'C 1 CT 1 CT 1 ±3%