SI77 Search Results

Si7748DP-T1-GE3

Abstract: Si7748DP si7748
Contextual Info: New Product Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 50 0.0066 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 27.8 nC • Halogen-free • SkyFET Monolithic TrenchFET

DIODE 0536

Abstract: Si7738 Si7738DP Si7738DP-T1-E3
Contextual Info: New Product Si7738DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 150 0.038 at VGS = 10 V 30 35 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested

Si7784DP

Abstract: Si7784DP-T1-GE3 si7784
Contextual Info: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm

Contextual Info: New Product Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 50 0.0066 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 27.8 nC • Halogen-free • SkyFET Monolithic TrenchFET

Si7790DP

Contextual Info: SPICE Device Model Si7790DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Si7720

Abstract: Si7720DN
Contextual Info: SPICE Device Model Si7720DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SI7788DP-T1-GE3 PowerPAK SO-8 VISHAY

Contextual Info: New Product Si7788DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0041 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

Contextual Info: Si7703EDN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 6.3 0.068 at VGS = - 2.5 V - 5.3 0.090 at VGS = - 1.8 V - 4.6 SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21

Si7720DN

Abstract: Si7720DN-T1-GE3 si7720
Contextual Info: Si7720DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) 30 0.0125 at VGS = 10 V 12 0.015 at VGS = 4.5 V 12 Qg (Typ.) 13.7 nC PowerPAK 1212-8 S 3.30 mm • Notebook PC - System Power • Buck Converter

Contextual Info: New Product Si7794DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0034 at VGS = 10 V 60 0.0042 at VGS = 4.5 V 60 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si7742DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0035 at VGS = 10 V 60 0.0045 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 34 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

1D12

Contextual Info: New Product Si7716ADN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0135 at VGS = 10 V 16 0.0165 at VGS = 4.5 V 16 VDS (V) 30 • Halogen-free • TrenchFET Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested

AN609

Abstract: SI7754DP
Contextual Info: Si7754DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Si7788DP

Contextual Info: New Product Si7788DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0041 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

transistor schottky model spice

Abstract: Si7720DN
Contextual Info: SPICE Device Model Si7720DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

TB-17

Abstract: Si7742DP si7742
Contextual Info: New Product Si7742DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 60 0.0045 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 34 nC • Halogen-free • SkyFET Monolithic TrenchFET

AN609

Abstract: Si7784DP
Contextual Info: Si7784DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core

Contextual Info: New Product Si7716ADN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0135 at VGS = 10 V 16 0.0165 at VGS = 4.5 V 16 VDS (V) 30 • Halogen-free • TrenchFET Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested

Si7705DN

Contextual Info: Si7705DN New Product Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) -20 D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile

Contextual Info: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core

Contextual Info: New Product Si7774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0038 at VGS = 10 V 60 0.0047 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si7742DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0035 at VGS = 10 V 60 0.0045 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 34 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Si7703EDN

Contextual Info: SPICE Device Model Si7703EDN Vishay Siliconix P-Channel 20-V D-S MOSFET With Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range