AN609
Abstract: SI7754DP
Contextual Info: Si7754DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,
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si7754dpan60922-aug-08 |
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S-82176
Abstract: s8217
Contextual Info: SPICE Device Model Si7754DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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si7754dp18-jul-08s-82176s8217 |
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si7754
Abstract: SI7754DP s-82176
Contextual Info: SPICE Device Model Si7754DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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si7754dps-82176-rev15-sep-08si7754+1s-82176
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