SI6801 Search Results
SI6801 Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|
Si6801DQ | Unknown | Metal oxide N/P-channel field effect transistor enh. | Original | 308.3KB | 4 | ||
Si6801DQ |
![]() |
Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
Si6801DQ | Vishay Intertechnology | N- and P-Channel, Reduced Qg , Fast Switching MOSFET | Original | 97.32KB | 6 | ||
SI6801DQ-DS | Vishay Telefunken | DS-Spice Model for Si6801DQ | Original | 354.02KB | 4 | ||
Si6801DQ SPICE Device Model |
![]() |
N- and P-Channel Dual Enhancement-Mode MOSFET | Original | 354.02KB | 4 | ||
SI6801DQ-T1 | Vishay Intertechnology | N- and P-Channel, Reduced Qg , Fast Switching MOSFET | Original | 97.32KB | 6 |
SI6801 Price and Stock
Suzhou Novosense Microelectronics Co Ltd NSI6801C-DSWFRSINGLE-CHANNEL ISOLATED GATE DRI |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
NSI6801C-DSWFR | Digi-Reel | 4,733 | 1 |
|
Buy Now | |||||
![]() |
NSI6801C-DSWFR | 444 |
|
Get Quote | |||||||
Suzhou Novosense Microelectronics Co Ltd NSI6801B-DSWFRSINGLE-CHANNEL ISOLATED GATE DRI |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
NSI6801B-DSWFR | Cut Tape | 4,207 | 1 |
|
Buy Now | |||||
Suzhou Novosense Microelectronics Co Ltd NSI6801MC-DSWVRSINGLE-CHANNEL ISOLATED GATE DRI |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
NSI6801MC-DSWVR | Cut Tape | 871 | 1 |
|
Buy Now | |||||
Suzhou Novosense Microelectronics Co Ltd NSI6801LC-DDBRSINGLE-CHANNEL ISOLATED GATE DRI |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
NSI6801LC-DDBR | Cut Tape | 790 | 1 |
|
Buy Now | |||||
![]() |
NSI6801LC-DDBR | 2,315 |
|
Get Quote | |||||||
Vishay Siliconix SI6801DQ-T1 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SI6801DQ-T1 | 4,145 |
|
Get Quote | |||||||
![]() |
SI6801DQ-T1 | 3,316 |
|
Buy Now |
SI6801 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Si6801DQContextual Info: Si6801DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 0.260 @ VGS = 3.0 V "1.5 0.190 @ VGS = –4.5 V "1.7 0.280 @ VGS = –3.0 V "1.3 D1 S2 TSSOP-8 D1 S1 S1 |
Original |
Si6801DQ S-47967--Rev. 22-Jul-96 | |
Si6801DQContextual Info: Si6801DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 0.260 @ VGS = 3.0 V "1.5 0.190 @ VGS = –4.5 V "1.7 0.280 @ VGS = –3.0 V "1.3 D1 S2 TSSOP-8 D1 S1 S1 |
Original |
Si6801DQ S-47967--Rev. 22-Jul-96 | |
Si6801DQContextual Info: Si6801DQ Dual N- and P-Channel, Reduced Qg, Fast Switching MOSFET Product Summary VDS V N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 0.260 @ VGS = 3.0 V "1.5 0.190 @ VGS = –4.5 V "1.7 0.280 @ VGS = –3.0 V "1.3 D1 S2 TSSOP-8 |
Original |
Si6801DQ S-49520--Rev. 18-Dec-96 | |
Contextual Info: Si6801DQ Vishay Siliconix N- and P-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 0.260 @ VGS = 3.0 V "1.5 0.190 @ VGS = –4.5 V "1.7 0.280 @ VGS = –3.0 V "1.3 |
Original |
Si6801DQ 08-Apr-05 | |
Si6801DQContextual Info: Si6801DQ Vishay Siliconix N- and P-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 0.260 @ VGS = 3.0 V "1.5 0.190 @ VGS = –4.5 V "1.7 0.280 @ VGS = –3.0 V "1.3 |
Original |
Si6801DQ S-56944--Rev. 23-Nov-98 | |
Si6801DQContextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si6801DQ Vishay Siliconix N- and P-Channel Dual Enhancement-Mode MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS |
Original |
Si6801DQ 22-May-04 | |
Si6801DQContextual Info: SPICE Device Model Si6801DQ Vishay Siliconix N- and P-Channel Dual Enhancement-Mode MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si6801DQ 25-Feb-99 | |
Si6801DQ
Abstract: 70187
|
Original |
Si6801DQ 18-Jul-08 70187 | |
COILTRONICS 407 241-7876
Abstract: OS-CON 10SA220K 10SA220K C9-C14 alco alco switch sanyo OS-CON SA 4435D DIFS4 SW-DIP-4
|
OCR Scan |
9140DB nF/25 nF/10V 40-Pin Si4410DY Si9160 Si9160DB 07-Feb-97 AES473S COILTRONICS 407 241-7876 OS-CON 10SA220K 10SA220K C9-C14 alco alco switch sanyo OS-CON SA 4435D DIFS4 SW-DIP-4 | |
LS4148
Abstract: Si9160 TSSOP-16
|
OCR Scan |
Si9160 Si6801 S-54622â 10-Nov-97 LS4148 TSSOP-16 | |
593D
Abstract: 595D 6TPA150M LTC1773 LTC1773EMS MS10 Si9801DY TOKO D104C LR1206-01-R068 CDRH6D28-3RO
|
Original |
LTC1773 550kHz LTC1771 LTC1772 OT-23 OT-23, 550kHz, LTC1877 600mA 593D 595D 6TPA150M LTC1773 LTC1773EMS MS10 Si9801DY TOKO D104C LR1206-01-R068 CDRH6D28-3RO | |
LTDB msop
Abstract: LTC1622 1N4818 d03316-472 ltdb MBRS120LT3 IR10BQ015 LTC1622CMS8 LTC1622CS8 LTC1622IS8
|
Original |
LTC1622 550kHz 750kHz LTC1627/LTC1707 LTC1628 LTC1772 OT-23 OT-23, 550kHz LTC1735 LTDB msop LTC1622 1N4818 d03316-472 ltdb MBRS120LT3 IR10BQ015 LTC1622CMS8 LTC1622CS8 LTC1622IS8 | |
ltdbContextual Info: LTC1622 Low Input Voltage Current Mode Step-Down DC/DC Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO High Efficiency Constant Frequency 550kHz Operation VIN Range: 2V to 10V Multiampere Output Currents OPTI-LOOPTM Compensation Minimizes COUT |
Original |
LTC1622 550kHz 750kHz LTC1627/LTC1707 LTC1628 LTC1772 OT-23 OT-23, 550kHz LTC1735 ltdb | |
LTMVContextual Info: LTC1773 Synchronous Step-Down DC/DC Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 1773 is a current mode synchronous buck regulator controller that drives external complementary power MOSFETs using a fixed frequency architecture. The operating supply range is from 2.65V to 8.5V, making it |
Original |
LTC1773 550kHz 250mA LTC1877 550kHz, 600mA LTC1878 LTC3404 LTMV | |
|
|||
6542
Abstract: AN805 LS4148 Si6542DQ Si6552DQ Si6801DQ Si9160 si9145 siliconix an805
|
Original |
AN805 6542 AN805 LS4148 Si6542DQ Si6552DQ Si6801DQ Si9160 si9145 siliconix an805 | |
LS4148
Abstract: Si9160 Si9160BQ-T1 TSSOP-16 MLC110 P-CHANNEL POWER MOSFET
|
Original |
Si9160 Si9160 Si6801 Si6801 S-40700--Rev. 19-Apr-04 LS4148 Si9160BQ-T1 TSSOP-16 MLC110 P-CHANNEL POWER MOSFET | |
Contextual Info: Si9161 Vishay Siliconix Si9161 Optimized-Efficiency Controller for RF Power Amplifier Boost Converter FEATURES • Si9160 architecture optimized for “light-load” efficiency • High Frequency Switching up to 2 MHz • Optimized Output Drive Current (300 mA) |
Original |
Si9161 Si9160 Si9161 Si6801 11-Mar-11 | |
Contextual Info: Si9160 Controller for RF Power Amplifier Boost Converter Features D Wide Bandwidth Feedback Amplifier D Single-Cell LiIon and Three-cell NiCd or NiMH Operation D High Frequency Switching up to 2 MHz D Optimized Output Drive Current (350 mA) D Standby Mode |
Original |
Si9160 Si9160 Si6801 S-54622--Rev. 10-Nov-97 | |
MBRM120T3
Abstract: 68uF 10V SANYO 47pF 50V NPO CR16-3162FM SILICONIX Si9801DY MMSD914T1 EEFUEOG181R BD 1206 CR16-303JM r025
|
Original |
SI9801 SI6801 MBRM120T3 LTC1773MS10 100pF MMSD914T1 CDRH6D28-3R0 MBRM120T3 68uF 10V SANYO 47pF 50V NPO CR16-3162FM SILICONIX Si9801DY MMSD914T1 EEFUEOG181R BD 1206 CR16-303JM r025 | |
mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
|
Original |
2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L | |
Contextual Info: Tem ic SÎ9160DB S c m i c o n d il f I o r s Si9160 Demonstration Board Features • • • • Synchronous Boost Converter with Efficiency up to 93^ 1-MHz Switching Frequency Operates with Input Voltages of 3.0 V to 5 V 5-V Output at 0 A to 1.0 A Description |
OCR Scan |
9160DB Si9160 Si6801 LS4148 1210YG106ZAT TSSOP-16 07-Feb-97 | |
Contextual Info: Tem ic SÌ9160 S e m i c o n d u c t o r s Controller for RF Power Amplifier Boost Converter Features • High Frequency Switching up to 2 MHz • Optimized Output Drive Current (350 mA) • Standby Mode • Wide Bandwidth Feedback Amplifier • Single-Cell Lilon and Three-cell NiCd or NiMH Operation |
OCR Scan |
Si9160 Si6801 | |
IR10BQ015
Abstract: LTC1622 LTC1622CMS8 LTC1622CS8 LTC1622IS8 Si3443DV 6TPA47M LTDB msop MBR320T3 SANYO SS 1001
|
Original |
LTC1622 550kHz 750kHz LTC1627/LTC1707 LTC1628 LTC1772 OT-23 OT-23, 550kHz LTC1735 IR10BQ015 LTC1622 LTC1622CMS8 LTC1622CS8 LTC1622IS8 Si3443DV 6TPA47M LTDB msop MBR320T3 SANYO SS 1001 | |
Contextual Info: Si9160 Vishay Siliconix Controller for RF Power Amplifier Boost Converter FEATURES D High Frequency Switching up to 2 MHz D Optimized Output Drive Current (350 mA) D Standby Mode D Wide Bandwidth Feedback Amplifier D Single-Cell LiIon and Three-cell NiCd or NiMH Operation |
Original |
Si9160 Si9160 Si6801 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |