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    SI6562CDQ Search Results

    SI6562CDQ Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI6562CDQ-T1-BE3
    		Vishay Siliconix N- AND P-CHANNEL 20-V (D-S) MOSF Original PDF 255.72KB 17
    SI6562CDQ-T1-GE3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 6.7A 8-TSSOP Original PDF 17
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    SI6562CDQ Price and Stock

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    Vishay Intertechnologies SI6562CDQ-T1-GE3

    MOSFET N/P-CH 20V 6.7A 8TSSOP
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    DigiKey () SI6562CDQ-T1-GE3 Digi-Reel 26,687 1
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    SI6562CDQ-T1-GE3 Tape & Reel 24,000 3,000
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    Avnet Americas () SI6562CDQ-T1-GE3 Ammo Pack 1
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    SI6562CDQ-T1-GE3 Tape & Reel 12 Weeks 3,000
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    Mouser Electronics SI6562CDQ-T1-GE3 24,562
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    Verical SI6562CDQ-T1-GE3 48 15
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    EBV Elektronik SI6562CDQ-T1-GE3 15 Weeks 3,000
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    IBS Electronics SI6562CDQ-T1-GE3 48,000 3,000
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    Vishay Intertechnologies SI6562CDQ-T1-BE3

    MOSFET N/P-CH 20V 5.7A 8TSSOP
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    DigiKey () SI6562CDQ-T1-BE3 Digi-Reel 3,191 1
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    SI6562CDQ-T1-BE3 Cut Tape 3,191 1
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    SI6562CDQ-T1-BE3 Tape & Reel 3,000
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    Avnet Americas SI6562CDQ-T1-BE3 Tape & Reel 20 Weeks 3,000
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    Mouser Electronics SI6562CDQ-T1-BE3 10,641
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    Vishay Siliconix SI6562CDQ-T1-GE3

    SI6562CDQ-T1-GE3 by SILICONIX (VISHAY) is a dual N-channel MOSFET with 30V Vds, 6.5A Id, 0.022Ω Rds(on), and 2.5V Vgs(th), ideal for power management applications.
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    IBS Electronics SI6562CDQ-T1-GE3 3,000 3,000
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    Vishay Siliconix SI6562CDQ-T1-BE3

    SI6562CDQ-T1-BE3,SILICONIX
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    IBS Electronics SI6562CDQ-T1-BE3 1
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    Vishay Huntington SI6562CDQ-T1-GE3

    N- and P-Channel 20-V (D-S) MOSFETs
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    Win Source Electronics SI6562CDQ-T1-GE3 72,543
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    SI6562CDQ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si6562CDQ

    Abstract: Si6562DQ-T1-GE3
    Contextual Info: Specification Comparison www.vishay.com Vishay Siliconix Si6562CDQ vs. Si6562DQ Description: Package: Pin Out: N- and P-Channel, 20-V D-S MOSFET TSSOP-8 Identical Part Number Replacements: Si6562CDQ-T1-GE3 replaces Si6562DQ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		Si6562CDQ Si6562DQ Si6562CDQ-T1-GE3 Si6562DQ-T1-GE3 06-Jul-11 PDF

    AN609

    Abstract: Si6562CDQ 82-811
    Contextual Info: Si6562CDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		Si6562CDQ AN609, 02-Oct-08 AN609 82-811 PDF

    SI6562cdq

    Contextual Info: SPICE Device Model Si6562CDQ Vishay Siliconix N-Channel and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized over


    Original     		Si6562CDQ 18-Jul-08 PDF

    Contextual Info: New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) Qg (Typ.) a 0.022 at VGS = 4.5 V 6.7 0.036 at VGS = 2.5 V 5.2a 0.030 at VGS = - 4.5 V - 6.1a 0.045 at VGS = - 2.5 V


    Original     		Si6562CDQ Si6562CDQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) Qg (Typ.) a 0.022 at VGS = 4.5 V 6.7 0.036 at VGS = 2.5 V 5.2a 0.030 at VGS = - 4.5 V - 6.1a 0.045 at VGS = - 2.5 V


    Original     		Si6562CDQ Si6562CDQ-T1-GE3 11-Mar-11 PDF

    SI6562cdq

    Abstract: 82575
    Contextual Info: New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) Qg (Typ.) a 0.022 at VGS = 4.5 V 6.7 0.036 at VGS = 2.5 V 5.2a 0.030 at VGS = - 4.5 V - 6.1a 0.045 at VGS = - 2.5 V


    Original     		Si6562CDQ Si6562CDQ-T1-GE3 18-Jul-08 82575 PDF

    Contextual Info: New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) Qg (Typ.) a 0.022 at VGS = 4.5 V 6.7 0.036 at VGS = 2.5 V 5.2a 0.030 at VGS = - 4.5 V - 6.1a 0.045 at VGS = - 2.5 V


    Original     		Si6562CDQ Si6562CDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    JEDEC TSSOP 28 LEAD PACKAGE

    Contextual Info: New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) Qg (Typ.) a 0.022 at VGS = 4.5 V 6.7 0.036 at VGS = 2.5 V 5.2a 0.030 at VGS = - 4.5 V - 6.1a 0.045 at VGS = - 2.5 V


    Original     		Si6562CDQ Si6562CDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 JEDEC TSSOP 28 LEAD PACKAGE PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF