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    SI6562CDQ Search Results

    SI6562CDQ Datasheets (2)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI6562CDQ-T1-BE3
    		Vishay Siliconix N- AND P-CHANNEL 20-V (D-S) MOSF Original PDF 255.72KB 17
    SI6562CDQ-T1-GE3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 6.7A 8-TSSOP Original PDF 17
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    SI6562CDQ Price and Stock

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    Vishay Intertechnologies SI6562CDQ-T1-GE3

    Trans MOSFET N/P-CH 20V 6.7A 8-Pin TSSOP T/R
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    Verical SI6562CDQ-T1-GE3 2,738 15
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    Avnet Americas () SI6562CDQ-T1-GE3 Ammo Pack 1
    • 1 $1.66
    • 10 $1.66
    • 100 $0.70
    • 1000 $0.53
    • 10000 $0.49
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    SI6562CDQ-T1-GE3 Tape & Reel 3,000
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    • 10000 $0.40
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    Arrow Electronics SI6562CDQ-T1-GE3 Cut Strips 2,738 52 Weeks 1
    • 1 $1.56
    • 10 $0.99
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    • 1000 $0.41
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    Newark () SI6562CDQ-T1-GE3 Bulk 10,775 1
    • 1 $1.41
    • 10 $0.67
    • 100 $0.59
    • 1000 $0.55
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    SI6562CDQ-T1-GE3 Cut Tape 89 1
    • 1 $1.66
    • 10 $1.66
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    SI6562CDQ-T1-GE3 Tape & Reel 89 10
    • 1 $1.66
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    SI6562CDQ-T1-GE3 Tape & Reel 3,000
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    TTI SI6562CDQ-T1-GE3 Reel 9,000 3,000
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    TME SI6562CDQ-T1-GE3 3,000
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    EBV Elektronik SI6562CDQ-T1-GE3 53 Weeks 3,000
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    Vishay Intertechnologies SI6562CDQ-T1-BE3

    Transistor MOSFET Array N-CH/P-CH 20V 6.7A/6.1A 8-Pin TSSOP - Tape and Reel (Alt: SI6562CDQ-T1-BE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI6562CDQ-T1-BE3 Tape & Reel 46 Weeks 3,000
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    TTI SI6562CDQ-T1-BE3 Reel 3,000
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    Vishay Huntington SI6562CDQ-T1-GE3

    N- and P-Channel 20-V (D-S) MOSFETs
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI6562CDQ-T1-GE3 66,000
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    SI6562CDQ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si6562CDQ

    Abstract: Si6562DQ-T1-GE3
    Contextual Info: Specification Comparison www.vishay.com Vishay Siliconix Si6562CDQ vs. Si6562DQ Description: Package: Pin Out: N- and P-Channel, 20-V D-S MOSFET TSSOP-8 Identical Part Number Replacements: Si6562CDQ-T1-GE3 replaces Si6562DQ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		si6562cdqsi6562dqsi6562cdq-t1-ge3si6562dq-t1-ge3+106-jul-11 PDF

    AN609

    Abstract: Si6562CDQ 82-811
    Contextual Info: Si6562CDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		si6562cdqan60902-oct-0882-811 PDF

    SI6562cdq

    Contextual Info: SPICE Device Model Si6562CDQ Vishay Siliconix N-Channel and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized over


    Original     		si6562cdq18-jul-08 PDF

    Contextual Info: New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) Qg (Typ.) a 0.022 at VGS = 4.5 V 6.7 0.036 at VGS = 2.5 V 5.2a 0.030 at VGS = - 4.5 V - 6.1a 0.045 at VGS = - 2.5 V


    Original     		si6562cdqsi6562cdq-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) Qg (Typ.) a 0.022 at VGS = 4.5 V 6.7 0.036 at VGS = 2.5 V 5.2a 0.030 at VGS = - 4.5 V - 6.1a 0.045 at VGS = - 2.5 V


    Original     		si6562cdqsi6562cdq-t1-ge311-mar-11 PDF

    SI6562cdq

    Abstract: 82575
    Contextual Info: New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) Qg (Typ.) a 0.022 at VGS = 4.5 V 6.7 0.036 at VGS = 2.5 V 5.2a 0.030 at VGS = - 4.5 V - 6.1a 0.045 at VGS = - 2.5 V


    Original     		si6562cdqsi6562cdq-t1-ge318-jul-0882575 PDF

    Contextual Info: New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) Qg (Typ.) a 0.022 at VGS = 4.5 V 6.7 0.036 at VGS = 2.5 V 5.2a 0.030 at VGS = - 4.5 V - 6.1a 0.045 at VGS = - 2.5 V


    Original     		si6562cdqsi6562cdq-t1-ge32011/65/eu2002/95/ec+112-mar-12 PDF

    JEDEC TSSOP 28 LEAD PACKAGE

    Contextual Info: New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) Qg (Typ.) a 0.022 at VGS = 4.5 V 6.7 0.036 at VGS = 2.5 V 5.2a 0.030 at VGS = - 4.5 V - 6.1a 0.045 at VGS = - 2.5 V


    Original     		si6562cdqsi6562cdq-t1-ge32011/65/eu2002/95/ec+212-mar-12jedec tssop 28 lead package PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8si4812bsi-4102si7149dpsim400si4932si7135sib914si4477 PDF