SI5475BDC Search Results

Contextual Info: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated

diode 1334

Abstract: transistor 5457 AN609 Si5475BDC 73816
Contextual Info: Si5475BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si5475BDC

Abstract: Si5475BDC-T1-E3
Contextual Info: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • TrenchFET Power MOSFET: 1.8-V Rated Qg (Typ) RoHS

1206 8 ChipFET

Contextual Info: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated

Si5475BDC-T1-GE3

Abstract: Si5475BDC Si5475BDC-T1-E3
Contextual Info: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated

SI5475BDC

Contextual Info: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET PRODUCT SUMMARY −12 FEATURES rDS(on) (W) ID (A)a 0.028 @ VGS = −4.5 V −6 0.039 @ VGS = −2.5 V −6 0.054 @ VGS = −1.8 V −6 VDS (V) Qg (Typ) D TrenchFETr Power MOSFET: 1.8-V Rated

Contextual Info: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated

Si5475BDC

Contextual Info: SPICE Device Model Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET PRODUCT SUMMARY −12 FEATURES rDS(on) (W) ID (A)a 0.028 @ VGS = −4.5 V −6 0.039 @ VGS = −2.5 V −6 0.054 @ VGS = −1.8 V −6 VDS (V) Qg (Typ) D TrenchFETr Power MOSFET: 1.8-V Rated

Si5475BDC

Abstract: Si5475BDC-T1-E3
Contextual Info: New Product Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 VDS (V) - 12 • TrenchFET Power MOSFET: 1.8 V Rated Qg (Typ.) RoHS

Si5475BDC

Abstract: Si5475BDC-T1-E3
Contextual Info: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated

Si5475BDC

Contextual Info: SPICE Device Model Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI5475DDC-T1-GE3

Abstract: Si5475BDC Si5475BDC-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si5475DDC vs. Si5475BDC Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5475DDC-T1-GE3 replaces Si5475BDC-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

74119

Abstract: Si5475BDC Si5475BDC-T1-E3 Si5475DC Si5475DC-T1
Contextual Info: Specification Comparison Vishay Siliconix Si5475BDC vs. Si5475DC Description: P-Channel, 12 V D-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5475BDC-T1-E3 Replaces Si5475DC-T1-E3 Si5475BDC-T1 Replaces Si5475DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

SI2333DS-T1-E3

Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
Contextual Info: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no