SI5001 Search Results

Contextual Info: lOOOpF, 2 K V E L E C TR IC A L SPECIFICATIONS« NDTES 1,0 PINS WITHOUT ELECTRICAL CDNNECTIDN ARE DMITTED, 1CT i 1CT± 3/ 1.0 TURNS RATID P 4 - P 5 - P 6 i ( J 3 - J 6 ) 1CT i 1-41CT ± 3V. (P 3 -P 2 -P 1 ) ' ( J 1 -J 2 ) 2.0 INDUCTANCE (P 6 -P 4 ) 350uH MIN, e 0,1V ,lOOKHz, 8nA DC

Contextual Info: NDTESi PINS NDT E L E C T R I C A L L Y CONNECTED ARE DMITTED. ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P 1 -J 1 = P 2 -J 2 ; P 4 -J 4 = P 5 -J 5 2 .0 DC RESISTANCE: P 1 -J 1 P 2 -J 2 P 4 -J 4 P 5 -J 5 .5 .5 .5 .5 3 .0 COMMON MODE: CMA — dB : : 65 uH 0 .0 1 V ,

SI-5001

Contextual Info: 1CT I 1CT TD+ TD- J1 TX+ J2 TX- J3 RX+ J4 J5 RCT J6 RX- J7 J8 lOOOpF, 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: P 4 - P 5 - P 6 : ( J 3 - J 6 ) (P 3 -P 2 -P 1 ) : (J 1 -J 2 ) 1CT : 1C T ± 3% 1CT : 1CT ± 3% 1,0 PINS VITHDUT E L E C T R I C A L

SI-50013

Contextual Info: 1CT ì 1CT lOOOpF, 2KV ELECTRICAL SPECIFICATIONS' NDTES 1.0 TURNS RATIO P 4 -P 5 -P 6 i ( J 3 -J 6 ) (P 3 -P 2 -P 1 ) • (J 1 -J 2 ) 2,0 INDUCTANCE (P 6 -P 4 ) 1CT ! 1CT ± 3 V. 350uH MIN, @ 0,1V , lOOKHz, 8mA DC Bias (P3-P1) 3,0 1,0 P I N S W I T H D U T E L E C T R I C A L

Contextual Info: 1 : 1 .4 1 CT lO O O pF, 2 KV ELECTRICAL SPECIFICATIONS: NOTES: 1 .0 TURNS RATIO: P 4 - P 5 - P 6 (P 1 -P 2 -P 3 ) : (J 3 -J 6 ) : (J 1 -J 2 ) 2 .0 INDUCTANCE : 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE : 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 )

Contextual Info: 1.41 CT lOOOpF, 2KV ELECTRICAL SPECIFICATIONS: NOTES: 1.0 T U R N S RATIO : P 4 - P 5 - P 6 (P 1 -P 2 -P 3 ) : (J 3 -J 6 ) : (J 1 -J 2 ) 2.0 INDUCTANCE : 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: (J6 — J 3 ) = ( J 2 — J 1)

SI-50014

Contextual Info: 1CT : 1CT TXD+ J1 J2 J3 J4 J5 J6 J7 J8 P I TXD—(P2 CT (P3 . RXD+ 1CT : 1CT CT i_ iin n n n - 75 (P 7 \ •AA/V- i—« r m r - - RXD—(P8 75< TD+ TDRD+ RD - 75 ■ 75< lOOOpF, 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: ( P 7 - P 6 - P 8 )

Contextual Info: 1CT : 1CT TXD+ J1 J2 J3 P I TXD— P 2 CT (P5 1CT ! 1CT CT RXD+ J4 J5 J6 J7 J8 P6 — 75 -AA/V- P7, « m r- r^ m n r- RXD—( P 8 75< TD+ TDRD+ RD- 75. 75< lOOOpF, 2KV ELECTRICAL SPECIFICATIONS: N DT E S 1,0 P I N S 1.0 TURNS RATIO: (P 7 - P 6 - P 8 ) : ( J 3 - J6 )

Contextual Info: lOOOpF, 2 K V ELEC T R IC A L 1.0 S P EC IFIC A TIO N S « TURNS R A TID 1CT i 1CT± P 4 -P 5 -P 6 i (J3 -J6 ) (P 3 -P 2 -P 1) ' (J 1 -J 2 ) 3 5 0 u H MIN, g 0 , 1 V , l O O K H z , IN D U C TA N C E P 6 -P 5 -P 4 P 3 -P 2 -P 1 4.0 I N T E R W I N D I N G

FCX 590

Contextual Info: InNET TECHNOLOGIES SI-50017 Electrical E L E C T R IC A L S P E C IF IC A T IO N S R EV. X TURNS RATIO: P 4 -P 5 -P 6 ) : (J3 - J6 ) P 3 -P 2 -P 1 ) : (J1 - J2 ) • 1CT : . 1CT : 1CT ± 3% 1.41CT ± 3% INDUCTANCE: P 6-P 4 ) P 3-P 1 ) 350uH MIN. O 0 .1V , 100KHz. 8mA DC Bias

SI500

Abstract: SI-50014 P7TD
Contextual Info: 1CT * 1CT lOOOpF, 2KV ELECTRICAL SPECIFICATIONS' NDTES 1.0 TURNS RATID P 7 -P 6 -P 8 • ( J 3 -J 6 ) (P 1 -P 3 -P 2 ) ' (J 1 -J 2 ) 2.0 INDUCTANCE (P 7 -P 8 ) 1,0 PINS WITHDUT ELECTRICAL CDNNECTIDN ARE DMITTED, 1CT i 1CT± 3 / 1CT i 1CT ± 37. 350uH MIN, e 0,1V , lOOKHz,