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SI4914BD Datasheets (2)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4914BDY-T1-E3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8.4A 8-SOIC	Original	PDF		15
SI4914BDY-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8.4A 8-SOIC	Original	PDF		15

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Vishay Siliconix SI4914BDY-T1-GE3 SI4914BDY-T1-GE3 DUAL N-CHANNEL MOSFET TRANSISTOR,6.7 A,7.4 A,30V,8-PIN SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SI4914BDY-T1-GE3	Bulk			100	1 - 10 - 100 $1.06 1000 $0.98 10000 $0.80	Get Quote
Vishay Huntington SI4914BDY-T1-GE3 MOSFET 2N-CH 30V 8.4A 8-SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SI4914BDY-T1-GE3		5,000			1 - 10 - 100 $1.18 1000 $0.79 10000 $0.79	Buy Now

SI4914BD Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
si4914b Abstract: si4914 Si4914BDY Contextual Info: SPICE Device Model Si4914BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si4914bdy 18-jul-08 si4914b si4914	PDF
Si4914B Contextual Info: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V	Original	si4914bdy 2002/95/ec si4914bdy-t1-e3 si4914bdy-t1-ge3 +211-mar-11 si4914b	PDF
Contextual Info: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V	Original	si4914bdy 2002/95/ec si4914bdy-t1-e3 si4914bdy-t1-ge3 +22011/65/eu 12-mar-12	PDF
si4914b Abstract: Si4914BDY-T1-E3 Contextual Info: New Product Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V 8d VDS (V) Channel-1 30 Channel-2	Original	si4914bdy 08-apr-05 si4914b si4914bdy-t1-e3	PDF
Si4914B Abstract: si4914 si4914bdy Si4914BDY-T1-E3 SI4914BD Contextual Info: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V	Original	si4914bdy 2002/95/ec 18-jul-08 si4914b +3si4914 si4914bdy-t1-e3 si4914bd	PDF
AN609 Abstract: 72482 si4914bdy 56181 Contextual Info: Si4914BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si4914bdy an609 16-oct-07 72482 +156181	PDF
SI4914BDY-T1-E3 Abstract: SI4914BDY Si4914DY Si4914DY-T1-E3 Contextual Info: Specification Comparison Vishay Siliconix Si4914BDY vs. Si4914DY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET with Schottky Diode SO-8 Identical Part Number Replacements: Si4914BDY-T1-E3 replaces Si4914DY-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	si4914bdy si4914dy si4914bdy-t1-e3 si4914dy-t1-e3 +128-feb-08	PDF
Contextual Info: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V	Original	si4914bdy 2002/95/ec 2011/65/eu 12-mar-12	PDF
SI4914BDY-T1-E3 Abstract: si4914 Contextual Info: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V	Original	si4914bdy 18-jul-08 si4914bdy-t1-e3 si4914	PDF
Si4914BDY-T1-E3 Abstract: si4914bdy Contextual Info: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V	Original	si4914bdy 2002/95/ec 11-mar-11 si4914bdy-t1-e3	PDF
Contextual Info: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V	Original	si4914bdy 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: New Product Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V	Original	si4914bdy si4914bdy-t1-e3 si4914bdy-t1-ge3 18-jul-08	PDF
IT8301E Abstract: 12073A AES2810 AMD r6970 SN0508073 R5C832 l3007 T127 temp NTC thermistor SCK 083 tokin 108 Contextual Info: A B C D E Wistron CONFIDENTIAL 1 MODEL NAME : Diaz UMA 91.4AR01.001 Project Code: 08217-1 PCB NO : 1 2 2 Diaz Intergrate Intel GM Schematics Document uFCPGA Mobile Merom Intel Crestline-GM + ICH8M 3 3 REV : A00 4 4 Wistron Corporation 5 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih,	Original	4ar01 r2118 con6605 c6644 +16c6645 c6646 c6647 c6648 c6636 c6637 it8301e 12073a aes2810 amd r6970 sn0508073 r5c832 l3007 t127 temp ntc thermistor sck 083 tokin 108	PDF
IT8301E Abstract: IT8301 12073A EMC4001 L4910 C616A C536 PSE IT8512E Si4914B WISTRON power sequence Contextual Info: A 1 B C D E Model Name : Diaz Discrete Project Code : 91.4AR01.001 Revision : 08218-1 1 2 2 Diaz Discrete VGA ATI M82-S Schematics Document uFCPGA Mobile Merom Intel Crestline-PM + ICH8M 3 3 REV : A00 4 4 DZ1VQAT Wistron Corporation 5 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih,	Original	4ar01 m82-s r5401 r4303 +14r4029 r4030 c6925 100pf it8301e it8301 12073a emc4001 l4910 c616a c536 pse it8512e si4914b wistron power sequence	PDF

si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	diod92 vmn-sg2127-0911 diode sot-23 marking 15d si4210 +8si4812b si-4102 si7149dp sim400 si4932 si7135 sib914 si4477	PDF