SI4913DY Search Results

c 5929 transistor

Abstract: AN609 Si4913DY
Contextual Info: Si4913DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4913DY

Contextual Info: SPICE Device Model Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 9.4 0.019 at VGS = - 2.5 V - 8.4 0.024 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si4913DY Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 9.4 0.019 at VGS = - 2.5 V - 8.4 0.024 at VGS = - 1.8 V - 7.5 • TrenchFET Power MOSFET • Advanced High Cell Density Process

Si4913DY-T1-E3

Abstract: Si4913DY SI4913DY-T1-GE3
Contextual Info: Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 9.4 0.019 at VGS = - 2.5 V - 8.4 0.024 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si4913DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.015 @ VGS = -4.5 V -9.4 APPLICATIONS 0.019 @ VGS = -2.5 V - 8.4

21683

Abstract: SI4913DY
Contextual Info: Si4913DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.015 @ VGS = -4.5 V -9.4 APPLICATIONS 0.019 @ VGS = -2.5 V - 8.4

Si4913DY

Contextual Info: SPICE Device Model Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 9.4 0.019 at VGS = - 2.5 V - 8.4 0.024 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition

Si4913DY

Contextual Info: Si4913DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.015 @ VGS = -4.5 V -9.4 APPLICATIONS 0.019 @ VGS = -2.5 V - 8.4

Contextual Info: Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 9.4 - 20 0.019 at VGS = - 2.5 V - 8.4 0.024 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition

SI4913DY-T1-GE3

Abstract: SI4913DY-T1-E3
Contextual Info: Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 9.4 0.019 at VGS = - 2.5 V - 8.4 0.024 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition

Si4913DY

Abstract: mosfet SPICE MODEL
Contextual Info: SPICE Device Model Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4913DY-T1-E3

Abstract: Si4913DY Si4913DY-T1
Contextual Info: Si4913DY Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 9.4 0.019 at VGS = - 2.5 V - 8.4 0.024 at VGS = - 1.8 V - 7.5 • TrenchFET Power MOSFET • Advanced High Cell Density Process

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

BS250KL

Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Contextual Info: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs