SI4850EY SPICE DEVICE MODEL Search Results
SI4850EY SPICE DEVICE MODEL Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| EP1800ILC-70 |
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EP1800 - Classic Family EPLD |
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| EP1800GM-75/B |
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EP1800 - Classic Family EPLD |
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| EP610DI-30 |
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EP610 - Classic Family EPLD, Logic,300 Gates,16 Macrocells |
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| EP1810GI-35 |
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EP1810 - Classic Family EPLD, Logic, 900 Gates, 48 Macrocells, 35ns, Industrial |
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| EP1810GC-35 |
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EP1810 - Classic Family EPLD, Logic, 900 Gates, 48 Macrocells, 35ns, Commercial |
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SI4850EY SPICE DEVICE MODEL Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| Si4850EY SPICE Device Model |
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N-Channel Reduced Qg, Fast Switching MOSFET | Original | 200.66KB | 3 |
SI4850EY SPICE DEVICE MODEL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model Si4850EY www.vishay.com Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
Si4850EY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
175C
Abstract: Si4850EY
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Original |
Si4850EY 175C | |
SI4850EY
Abstract: Si4850EY SPICE Device Model
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Original |
Si4850EY S-60072Rev. 23-Jan-06 Si4850EY SPICE Device Model | |
Si4850EYContextual Info: SPICE Device Model Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si4850EY 16-Apr-01 | |
Si4850EYContextual Info: SPICE Device Model Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si4850EY 18-Jul-08 | |
sud*50n025-06p
Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
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VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110 | |
gs 069
Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
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SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04 | |
q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
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SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS |