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    SI4835D Search Results

    SI4835D Datasheets (8)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4835DDY-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 13A 8-SOIC Original PDF 10
    SI4835DDY-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 13A 8-SOIC Original PDF 10
    SI4835-DEMO
    Silicon Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO SI4831 SI4835 24-SSOP Original PDF 40
    SI4835DY
    Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF 77.22KB 5
    SI4835DY
    Vishay P-Channel 30-V (D-S) MOSFET Original PDF 37.49KB 4
    Si4835DY
    Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF 60.24KB 4
    Si4835DY SPICE Device Model
    Vishay P-Channel 30-V (D-S) MOSFET Original PDF 201.74KB 3
    SI4835DY-T1
    Vishay Telefunken FET Transistor, P Channel, 1 VThreshold, ID ±8 A, SOP, Tape and Reel Original PDF 60.24KB 4
    SF Impression Pixel

    SI4835D Price and Stock

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    Vishay Intertechnologies SI4835DDY-T1-E3

    Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R
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    Verical () SI4835DDY-T1-E3 2,500 2,500
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    SI4835DDY-T1-E3 2,500 55
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    Avnet Americas SI4835DDY-T1-E3 Tape & Reel 2,500 19 Weeks 2,500
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    Arrow Electronics SI4835DDY-T1-E3 2,500 19 Weeks 2,500
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    Newark () SI4835DDY-T1-E3 Cut Tape 1,580 1
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    SI4835DDY-T1-E3 Cut Tape 2,500
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    SI4835DDY-T1-E3 Tape & Reel 2,500
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    TTI SI4835DDY-T1-E3 Reel 5,000 2,500
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    Bristol Electronics () SI4835DDY-T1-E3 1,027 1
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    SI4835DDY-T1-E3 50
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    Quest Components () SI4835DDY-T1-E3 821
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    SI4835DDY-T1-E3 821
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    SI4835DDY-T1-E3 4
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    TME SI4835DDY-T1-E3 2,500 1
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    Avnet Asia SI4835DDY-T1-E3 29 Weeks 2,500
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    EBV Elektronik SI4835DDY-T1-E3 27 Weeks 2,500
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    FAIRCHILD SI4835DY

    SI4835DY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () SI4835DY 1,755 1,140
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    SI4835DY 1,298 1,140
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    Vishay Intertechnologies SI4835DDY-T1-GE3

    Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical SI4835DDY-T1-GE3 1,683 21
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    Avnet Americas () SI4835DDY-T1-GE3 Ammo Pack 1
    • 1 $1.69
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    SI4835DDY-T1-GE3 Tape & Reel 27 Weeks 2,500
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    SI4835DDY-T1-GE3 Ammo Pack 1
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    Arrow Electronics SI4835DDY-T1-GE3 Cut Strips 1,683 19 Weeks 1
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    Newark () SI4835DDY-T1-GE3 Tape & Reel 3,799 100
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    SI4835DDY-T1-GE3 Cut Tape 3,799 1
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    SI4835DDY-T1-GE3 Cut Tape 430 1
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    SI4835DDY-T1-GE3 Tape & Reel 430 10
    • 1 $1.69
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    SI4835DDY-T1-GE3 Tape & Reel 2,500
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    TTI SI4835DDY-T1-GE3 Reel 2,500 2,500
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    Bristol Electronics () SI4835DDY-T1-GE3 2,375
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    SI4835DDY-T1-GE3 1,327 1
    • 1 $0.94
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    • 100 $0.35
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    Quest Components () SI4835DDY-T1-GE3 1,061
    • 1 $1.50
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    SI4835DDY-T1-GE3 1,061
    • 1 $1.25
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    • 100 $0.37
    • 1000 $0.32
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    TME SI4835DDY-T1-GE3 16 1
    • 1 $0.70
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    Avnet Asia SI4835DDY-T1-GE3 12,500 29 Weeks 2,500
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    EBV Elektronik SI4835DDY-T1-GE3 27 Weeks 2,500
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    Vishay Siliconix SI4835DDY-T1-E3

    MOSFET P-CH 30V 13A 8-SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SI4835DDY-T1-E3 Bulk 2,500
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    Quest Components SI4835DDY-T1-E3 414
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    Vishay Siliconix SI4835DDY-T1-GE3

    SI4835DDY-T1-GE3 P-CHANNEL MOSFET TRANSISTOR, 10.5 A, 30 V, 8-PIN SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SI4835DDY-T1-GE3 Bulk 2,500
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    SI4835D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SI4835BDY-T1-E3

    Abstract: Si4835DY SI4835BDY Si4835BDY-E3 Si4835BDY-T1 Si4835DY-T1 15TR13
    Contextual Info: Specification Comparison Vishay Siliconix Si4835BDY vs. Si4835DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4835BDY Replaces Si4835DY Si4835BDY-E3 (Lead (Pb)-free version) Replaces Si4835DY Si4835BDY-T1 Replaces Si4835DY-T1


    Original
    si4835bdysi4835dysi4835bdy-e3si4835bdy-t1+3si4835dy-t1si4835bdy-t1-e315tr13 PDF

    Contextual Info: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original
    si4835ddysi4835ddy-t1-e318-jul-08 PDF

    1232n-s

    Abstract: 1232ns Si4835DY P-Channel 30 V D-S MOSFET
    Contextual Info: SPICE Device Model Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si4835dy30-nov-981232n-s1232ns+1p-channel 30 v d-s mosfet PDF

    PC515

    Abstract: PC-515 PD500 2n7002 SFPJ-73 PR503 pc513 1U-0805 PQ501 PC511
    Contextual Info: 1 2 3 4 7 8 1 L2 PQ2 SI4835DY SO8 L3 PL503 BEAD 0805C PF500 6.5A/32VDC 1206 PD1 RLZ24D MLL34B PC500 100U 25V PR5 0.02_1% 2512 PL505 75UH . L1 ADINP S D 3 2 1 6 ADINP 25 PL500 BEAD 0805C 1 5 PD504 SFPJ-73 DC2010 L5. L4 L6 BATT 25 G CONN_JACK20 PJ500 PC1 0.1U


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    pl5000805cpl503pf500+15a/32vdcrlz24dmll34bpc500si4835dypc515pc-515pd5002n7002sfpj-73pr503pc5131u-0805pq501pc511 PDF

    Si4835DDY

    Abstract: Si4835DDY-T1-GE3 Si4835BDY Si4835BDY-T1-E3 Si4835DDY-T1-E3 SI4835 Si4835BDY-T1 dsa0020630
    Contextual Info: Specification Comparison Vishay Siliconix Si4835DDY vs. Si4835BDY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4835DDY-T1-E3 or Si4835DDY-T1-GE3 replaces Si4835BDY-T1-E3 Si4835DDY-T1-E3 or Si4835DDY-T1-GE3 replaces Si4835BDY-T1


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    si4835ddysi4835bdysi4835ddy-t1-e3si4835ddy-t1-ge3+4si4835bdy-t1-e3si4835bdy-t1si4835dsa0020630 PDF

    Contextual Info: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


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    si4835ddysi4835ddy-t1-e3si4835ddy-t1-ge32011/65/eu+22002/95/ec12-mar-12 PDF

    60703

    Abstract: Si4835DY
    Contextual Info: Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.019 @ VGS = –10 V "8.0 0.033 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


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    si4835dys-60703--rev30-nov-9860703 PDF

    Si4835DDY-T1-E3

    Abstract: Si4835DDY 80433
    Contextual Info: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


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    si4835ddysi4835ddy-t1-e308-apr-0580433 PDF

    4835 fairchild

    Abstract: 4835 mosfet mosfet 4835 Si4835DY 4835 so-8 4835 b
    Contextual Info: Si4835DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    si4835dy4835 fairchild4835 mosfetmosfet 4835+24835 so-84835 b PDF

    4835 fairchild

    Abstract: 4835 mosfet Si4835DY 4835 b 19-NC
    Contextual Info: Si4835DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    fds6685si4835dy4835 fairchild4835 mosfet+24835 b19-nc PDF

    Si4835DDY

    Abstract: a4022 FS 0245
    Contextual Info: SPICE Device Model Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    si4835ddys-81937-rev01-sep-08a4022+1fs 0245 PDF

    Si4835DY

    Abstract: Si4835DY-T1
    Contextual Info: Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.019 @ VGS = - 10 V - 8.0 0.033 @ VGS = - 4.5 V - 6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D Ordering Information: Si4835DY Si4835DY-T1 (with Tape and Reel)


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    si4835dysi4835dy-t108-apr-05 PDF

    Si4835DDY

    Contextual Info: SPICE Device Model Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    si4835ddy18-jul-08 PDF

    Contextual Info: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original
    si4835ddysi4835ddy-t1-e3si4835ddy-t1-ge32002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.019 @ VGS = - 10 V "8.0 0.033 @ VGS = - 4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    si4835dys-60703--rev30-nov-98 PDF

    Si4835DDY-T1-E3

    Abstract: Si4835DDY Si4835DDY-T1-GE3
    Contextual Info: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original
    si4835ddysi4835ddy-t1-e3si4835ddy-t1-ge311-mar-11 PDF

    4835 fairchild

    Abstract: mosfet 4835 4835 mosfet 4835 aa CBVK741B019 F011 F63TNR F852 L86Z Si4835DY
    Contextual Info: Si4835DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    si4835dy4835 fairchildmosfet 48354835 mosfet+64835 aacbvk741b019f011f63tnrf852l86z PDF

    Si4835D

    Abstract: SI4835ddy S-090 Si4835DDY-T1-GE3
    Contextual Info: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


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    si4835ddysi4835ddy-t1-e3si4835ddy-t1-ge32011/65/eu+42002/95/ec12-mar-12si4835ds-090 PDF

    Si4835DY-T1

    Abstract: Si4835DY Si4835D
    Contextual Info: Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.019 @ VGS = - 10 V - 8.0 0.033 @ VGS = - 4.5 V - 6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D Ordering Information: Si4835DY Si4835DY-T1 (with Tape and Reel)


    Original
    si4835dysi4835dy-t118-jul-08si4835d PDF

    Si4835DY

    Contextual Info: SPICE Device Model Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si4835dy18-jul-08 PDF

    C 4977

    Abstract: 85831 7193 c 8817 AN609 Si4835DDY 324383
    Contextual Info: Si4835DDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    si4835ddyan60925-mar-08c 4977+4858317193 c8817324383 PDF

    Si4835DY

    Abstract: v223
    Contextual Info: SPICE Device Model Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si4835dys-52525rev12-dec-05v223 PDF

    Si4835DY

    Abstract: Si4835DY-T1
    Contextual Info: Si4835DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.019 @ VGS = - 10 V - 8.0 0.033 @ VGS = - 4.5 V - 6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D Ordering Information: Si4835DY Si4835DY-T1 (with Tape and Reel)


    Original
    si4835dysi4835dy-t1s-31062--rev26-may-03 PDF

    si4835ddy

    Contextual Info: New Product Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 13 0.030 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original
    si4835ddysi4835ddy-t1-e3si4835ddy-t1-ge311-mar-11 PDF