SI4814B Search Results
SI4814B Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI4814BDY-T1-E3 | Vishay | Dual N-channel 30-v (d-s) Mosfet With Schottky Diode | Original | 72.64KB | 2 | ||
| SI4814BDY-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 10A 8SOIC | Original | 13 | |||
| SI4814BDY-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 10A 8SOIC | Original | 13 |
SI4814B Price and Stock
Vishay Siliconix SI4814BDY-T1-E3MOSFET, POWER, DUAL N-CHANNEL, 0.0145 OHMS (CHANNEL1), 0.015 OHMS (CHANNEL2) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4814BDY-T1-E3 | Bulk | 2,500 |
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Get Quote | ||||||
Vishay Siliconix SI4814BDYE3DUAL N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE Power Field-Effect Transistor, 10.5A I(D), 30V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4814BDYE3 | 950 |
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Get Quote | |||||||
SI4814B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Si4814DY
Abstract: Si4814DY-T1-E3 IDM-40 Si4814BDY-T1-E3
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si4814bdysi4814dysi4814bdy-t1-e3si4814dy-t1-e3+2 | |
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Contextual Info: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V |
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si4814bdysi4814bdy-t1-e3si4814bdy-t1-ge32011/65/eu+2 | |
475224
Abstract: 6803 AN609 92360 75574n
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si4814bdyan60902-mar-06475224+3 | |
SI4814DY-T1-E3
Abstract: 56 pF CH Si4814BDY-T1-E3 Si4814DY Si4814DY-T1
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si4814bdysi4814dysi4814bdy-t1-e3si4814dy-t1-e3+4 | |
CH21212Contextual Info: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5 |
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si4814bdys-50342--rev28-feb-05ch21212 | |
si4814b
Abstract: Si4814BDY-T1-E3 si4814bdy
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si4814bdy18-jul-08si4814bsi4814bdy-t1-e3 | |
4535AContextual Info: SPICE Device Model Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4814bdy18-jul-084535a | |
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Contextual Info: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5 |
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si4814bdysi4814bdy--e3si4814bdy-t1--e308-apr-05 | |
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Contextual Info: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V |
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si4814bdysi4814bdy-t1-e3si4814bdy-t1-ge32002/95/ec+3 | |
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Contextual Info: New Product Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) Channel-1 30 Channel-2 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V |
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si4814bdysi4814bdy-t1-e318-jul-08 | |
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Contextual Info: New Product Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) Channel-1 30 Channel-2 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V |
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si4814bdysi4814bdy-t1-e308-apr-05 | |
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Contextual Info: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V |
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si4814bdysi4814bdy-t1-e3si4814bdy-t1-ge311-mar-11 | |
q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
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sip41109sip41110sip4111175/2a+10 |