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    SI4814B Search Results

    SI4814B Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4814BDY-T1-E3
    Vishay Dual N-channel 30-v (d-s) Mosfet With Schottky Diode Original PDF 72.64KB 2
    SI4814BDY-T1-E3
    Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 10A 8SOIC Original PDF 13
    SI4814BDY-T1-GE3
    Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 10A 8SOIC Original PDF 13
    SF Impression Pixel

    SI4814B Price and Stock

    Vishay Siliconix

    Vishay Siliconix SI4814BDY-T1-E3

    MOSFET, POWER, DUAL N-CHANNEL, 0.0145 OHMS (CHANNEL1), 0.015 OHMS (CHANNEL2)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SI4814BDY-T1-E3 Bulk 2,500
    • 1 -
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    • 10000 $1.49
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    Vishay Siliconix SI4814BDYE3

    DUAL N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE Power Field-Effect Transistor, 10.5A I(D), 30V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI4814BDYE3 950
    • 1 -
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    • 10000 -
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    SI4814B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si4814DY

    Abstract: Si4814DY-T1-E3 IDM-40 Si4814BDY-T1-E3
    Contextual Info: 勝特力科技 886-3-5753170 百年電子 86-755-83289224 Http://www.100y.com.tw Specification Comparison Vishay Siliconix Si4814BDY vs. Si4814DY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET with Schottky Diode SO-8 Identical Part Number Replacements:


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    si4814bdysi4814dysi4814bdy-t1-e3si4814dy-t1-e3+2si4814dy-t1idm-40 PDF

    Contextual Info: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


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    si4814bdysi4814bdy-t1-e3si4814bdy-t1-ge32011/65/eu+22002/95/ec12-mar-12 PDF

    475224

    Abstract: 6803 AN609 92360 75574n
    Contextual Info: Si4814BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    si4814bdyan60902-mar-06475224+368039236075574n PDF

    SI4814DY-T1-E3

    Abstract: 56 pF CH Si4814BDY-T1-E3 Si4814DY Si4814DY-T1
    Contextual Info: Specification Comparison Vishay Siliconix Si4814BDY vs. Si4814DY Description: Dual N-Channel, 30 V D-S MOSFET with Schottky Diode Package: SO-8 Pin Out: Identical Part Number Replacements: Si4814BDY-T1-E3 Replaces Si4814DY-T1-E3 Si4814BDY-T1 Replaces Si4814DY-T1


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    si4814bdysi4814dysi4814bdy-t1-e3si4814dy-t1-e3+4si4814bdy-t1si4814dy-t110-nov-0656 pf ch PDF

    CH21212

    Contextual Info: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5


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    si4814bdys-50342--rev28-feb-05ch21212 PDF

    si4814b

    Abstract: Si4814BDY-T1-E3 si4814bdy
    Contextual Info: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


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    si4814bdy18-jul-08si4814bsi4814bdy-t1-e3 PDF

    4535A

    Contextual Info: SPICE Device Model Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    si4814bdy18-jul-084535a PDF

    Contextual Info: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5


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    si4814bdysi4814bdy--e3si4814bdy-t1--e308-apr-05 PDF

    Contextual Info: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original
    si4814bdysi4814bdy-t1-e3si4814bdy-t1-ge32002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: New Product Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) Channel-1 30 Channel-2 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original
    si4814bdysi4814bdy-t1-e318-jul-08 PDF

    Contextual Info: New Product Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) Channel-1 30 Channel-2 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original
    si4814bdysi4814bdy-t1-e308-apr-05 PDF

    Contextual Info: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


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    si4814bdysi4814bdy-t1-e3si4814bdy-t1-ge311-mar-11 PDF

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    sip41109sip41110sip4111175/2a+10q406 transistorsi9120equivalent q406q406sum65n20-30si3456bdv spice device modelsud*50n025si4304dy0038 tsopsi2325ds PDF