SI4483 Search Results

SI4483EDY

Contextual Info: Si4483EDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 30 ID (A) 0.0085 at VGS = - 10 V - 14 0.014 at VGS = - 4.5 V - 11 • TrenchFET Power MOSFET • ESD Protection: 3000 V RoHS APPLICATIONS COMPLIANT • Notebook PC

Si4483ADY

Abstract: Si4483A
Contextual Info: SPICE Device Model Si4483ADY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

7636 mosfet

Abstract: 7636 7935 7636 transistor diode 7935 8927 diode 9181 AN609 6901-6 Si4483A
Contextual Info: Si4483ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Si4483EDY

Contextual Info: Si4483EDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET D ESD Protection: 3000 V rDS(on) (W) ID (A) 0.0085 @ VGS = −10 V −14 APPLICATIONS 0.014 @ VGS = −4.5 V −11 D Notebook PC − Load Switch

Contextual Info: SPICE Device Model Si4483ADY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

si4483ady

Abstract: Si4483A SI4483ADY-T1-GE3 SI4483
Contextual Info: Si4483ADY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4483ADY

Abstract: Si4483A SI4483ADY-T1-GE3 S-82659-Rev
Contextual Info: New Product Si4483ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 • • • • Qg (Typ.) 44.8 nC Halogen-free TrenchFET Power MOSFET

74105

Abstract: integrated circuit 74105 datasheet 8807 AN609 Si4483EDY
Contextual Info: Si4483EDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4483EDY

Contextual Info: SPICE Device Model Si4483EDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4483EDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.0085 at VGS = - 10 V - 14 0.014 at VGS = - 4.5 V - 11 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • ESD Protection: 3000 V

Si4483A

Abstract: Si4483ADY
Contextual Info: Si4483ADY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4483EDY

Abstract: Si4483EDY-T1-E3
Contextual Info: Si4483EDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 30 ID (A) 0.0085 at VGS = - 10 V - 14 0.014 at VGS = - 4.5 V - 11 • TrenchFET Power MOSFET • ESD Protection: 3000 V RoHS APPLICATIONS COMPLIANT • Notebook PC

Contextual Info: Si4483ADY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

74104

Abstract: Si4483DY M 1591 741-04 9737 AN609 93602
Contextual Info: Si4483DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4483EDY

Abstract: Si4483EDY-T1-E3 Si4483EDY-T1-GE3 83038
Contextual Info: Si4483EDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.0085 at VGS = - 10 V - 14 0.014 at VGS = - 4.5 V - 11 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • ESD Protection: 3000 V

Contextual Info: Si4483EDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.0085 at VGS = - 10 V - 14 0.014 at VGS = - 4.5 V - 11 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • ESD Protection: 3000 V

Si4483A

Contextual Info: Si4483ADY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si4483EDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.0085 at VGS = - 10 V - 14 0.014 at VGS = - 4.5 V - 11 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • ESD Protection: 3000 V

Contextual Info: Si4483ADY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI4483EDY

Contextual Info: Si4483EDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET D ESD Protection: 3000 V rDS(on) (W) ID (A) 0.0085 @ VGS = −10 V −14 APPLICATIONS 0.014 @ VGS = −4.5 V −11 D Notebook PC

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM