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SI4409DY Datasheets (2)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4409DY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 150V 1.3A 8-SOIC	Original	PDF		10
SI4409DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 150V 1.3A 8-SOIC	Original	PDF		10

SI4409DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested	Original	si4409dy si4409dy-t1-e3 si4409dy-t1-ge3 2011/65/eu +22002/95/ec 12-mar-12	PDF
si4409 Abstract: SI4409DY-T1-E3 Contextual Info: New Product Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 rDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 4.8 nC COMPLIANT	Original	si4409dy si4409dy-t1-e3 08-apr-05 si4409	PDF
si4409 Abstract: Si4409DY Contextual Info: SPICE Device Model Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4409dy s-71389rev 16-jul-07 si4409	PDF
Contextual Info: Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested	Original	si4409dy si4409dy-t1-e3 si4409dy-t1-ge3 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
AN609 Contextual Info: Si4409DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si4409dy an609 21-jun-07	PDF
si4409 Abstract: Si4409DY-T1-GE3 Si4409DY Contextual Info: Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested	Original	si4409dy si4409dy-t1-e3 si4409dy-t1-ge3 18-jul-08 +1si4409	PDF
si4409 Contextual Info: Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested	Original	si4409dy si4409dy-t1-e3 si4409dy-t1-ge3 2011/65/eu +32002/95/ec 12-mar-12 si4409	PDF
Contextual Info: SPICE Device Model Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4409dy 18-jul-08	PDF
Contextual Info: Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested	Original	si4409dy si4409dy-t1-e3 si4409dy-t1-ge3 11-mar-11	PDF
si4409 Abstract: Si4409DY SI4409DY-T1-E3 Contextual Info: New Product Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 rDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 4.8 nC COMPLIANT	Original	si4409dy si4409dy-t1-e3 18-jul-08 si4409	PDF
BS250KL Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X Contextual Info: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	sc-75 sc-75a sc-89 bs250kl +9tsop6 marking 345 sud50p08 si3437 sud19p06-60l mosfet sub75p03 tsop6 marking 443 si5947du si1471dh si1073x	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	diod92 vmn-sg2127-0911 diode sot-23 marking 15d si4210 +8si4812b si-4102 si7149dp sim400 si4932 si7135 sib914 si4477	PDF