SI4356 Search Results

Si4356ADY

Abstract: TB-17 Si4356ADY-T1-E3
Contextual Info: Si4356ADY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 26 0.0068 at VGS = 4.5 V 23 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 30 nC APPLICATIONS

Si4356DY

Contextual Info: Si4356DY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES D TrenchFETr Power MOSFETS D Optimized for Low-Side Synchronous Rectifier Operation D 100 % RG Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 17 0.0075 @ VGS = 4.5 V

Si4356DY

Contextual Info: \\\ SPICE Device Model Si4356DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74120

Abstract: Si4356ADY
Contextual Info: SPICE Device Model Si4356ADY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4356 Si4356 S TA NDALONE S UB -GH Z R ECEIVER Features      Pin configurable Frequency range = 315–917 MHz Supply Voltage = 1.8–3.6 V Receive sensitivity = Up to –113 dBm Modulation  G FSK        OOK

Si4356DY

Contextual Info: Si4356DY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES D TrenchFETr Power MOSFETS D Optimized for Low-Side Synchronous Rectifier Operation PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 17 0.0075 @ VGS = 4.5 V 14 APPLICATIONS

Contextual Info: Si4356ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY 30 FEATURES rDS(on) (W) ID (A)a 0.0055 @ VGS = 10 V 26 0.0068 @ VGS = 4.5 V 23 VDS (V) D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 30 nC RoHS COMPLIANT APPLICATIONS

Si4356DY

Contextual Info: SPICE Device Model Si4356DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4356DY

Contextual Info: SPICE Device Model Si4356DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4356ADY

Abstract: 74120
Contextual Info: SPICE Device Model Si4356ADY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

5914

Abstract: 7386 AN609 Si4356ADY 62084
Contextual Info: Si4356ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si4356ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY 30 FEATURES rDS(on) (W) ID (A)a 0.0055 @ VGS = 10 V 26 0.0068 @ VGS = 4.5 V 23 VDS (V) D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 30 nC RoHS COMPLIANT APPLICATIONS

Si4356DY

Contextual Info: Si4356DY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES D TrenchFETr Power MOSFETS D Optimized for Low-Side Synchronous Rectifier Operation D 100 % RG Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 17 0.0075 @ VGS = 4.5 V

TB-17

Abstract: Si4356ADY Si4356ADY-T1-E3 V17B
Contextual Info: Si4356ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 26 0.0068 at VGS = 4.5 V 23 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested

Si4356DY

Contextual Info: Si4356DY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES D TrenchFETr Power MOSFETS D Optimized for Low-Side Synchronous Rectifier Operation D 100 % RG Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 17 0.0075 @ VGS = 4.5 V

Contextual Info: Si4356ADY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 26 0.0068 at VGS = 4.5 V 23 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 30 nC APPLICATIONS

Contextual Info: Si4356ADY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 26 0.0068 at VGS = 4.5 V 23 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 30 nC APPLICATIONS

dr1 433.92

Abstract: dr1 433,92 DIODE smd 434 and/dr1 433.92 dr1 433.92 4 pin
Contextual Info: Si4356RXModule-UG S i 4 3 5 6 - R X - 4 3 4 S TANDALONE R ECEIVER M O D U L E U SERS ’ G UIDE 1. Overview This document describes the basic use of the 4356-RX-434 small standalone receiver module. The schematic of the module is shown in Figure 1. Figure 1. 4356-RX-434 Standalone Receiver Module Schematic

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

Contextual Info: SMT Power Inductor SI 43 Type Features „ „ „ „ „ „ „ „ RoHS compliant. Low profile 2.5mm max.height SMD type. Unshielded. Self-leads,suitable for high density mounting. High energy storage and low DCR Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

q406 transistor

Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

sud*50n025-06p

Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
Contextual Info: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m