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    SI4160 Search Results

    SI4160 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4160DY-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 25.4A 8-SOIC Original PDF 10
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    SI4160 Price and Stock

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    Vishay Siliconix SI4160DY-T1-GE3

    MOSFET N-CH 30V 25.4A 8SO
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    DigiKey () SI4160DY-T1-GE3 Digi-Reel 1,713 1
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    SI4160DY-T1-GE3 Cut Tape 1,713 1
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    SI4160DY-T1-GE3 Reel 2,500
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    New Advantage Corporation SI4160DY-T1-GE3 5,000 1
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    Vishay Intertechnologies SI4160DY-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4160DY-T1-GE3)
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    Avnet Americas SI4160DY-T1-GE3 Reel 2,500 32 Weeks 2,500
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    Mouser Electronics SI4160DY-T1-GE3 23,520
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    Arrow Electronics SI4160DY-T1-GE3 Cut Strips 9 32 Weeks 1
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    Bristol Electronics SI4160DY-T1-GE3 4,056 4
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    Quest Components () SI4160DY-T1-GE3 3,132
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    SI4160DY-T1-GE3 3,132
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    TTI SI4160DY-T1-GE3 Reel 2,500
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    Avnet Asia SI4160DY-T1-GE3 36 Weeks 2,500
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    Vishay Intertechnologies SI4160DY-T1-GE3.

    Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:25.4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:5.7W; No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI4160DY-T1-GE3.
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    Newark SI4160DY-T1-GE3. Reel 2,500
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    Others SI4160DYT1GE3

    AVAILABLE EU
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    ComSIT USA SI4160DYT1GE3 288
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    Vishay Intertechnologies SI4160DYT1GE3

    AVAILABLE EU
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    ComSIT USA SI4160DYT1GE3 213
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    SI4160 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4562 mosfet

    Abstract: M 3211 4562 AN609 13544
    Contextual Info: Si4160DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original
    Si4160DY AN609, 02-Dec-08 4562 mosfet M 3211 4562 AN609 13544 PDF

    Contextual Info: SPICE Device Model Si4160DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    Si4160DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET


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    Si4160DY Si4160DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si4160DY-T1-GE3

    Abstract: si4160 69069
    Contextual Info: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET


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    Si4160DY Si4160DY-T1-GE3 11-Mar-11 si4160 69069 PDF

    Si4160DY-T1-GE3

    Abstract: RG406
    Contextual Info: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET


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    Si4160DY Si4160DY-T1-GE3 18-Jul-08 RG406 PDF

    Contextual Info: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET


    Original
    Si4160DY Si4160DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET


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    Si4160DY Si4160DY-T1-GE3 11-Mar-11 PDF

    Contextual Info: SPICE Device Model Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


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    Si4160DY 18-Jul-08 PDF

    Contextual Info: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET


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    Si4160DY Si4160DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: AMS2115 FAST TRANSIENT RESPONSE LDO CONTROLLER General Description Features The AMS2115 is a single IC controller that drives an external N Channel MOSFET as a source follower to produce a fast transient response, low dropout voltage regulator. The fast transient load


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    AMS2115 AMS2115 Si4160 LMK212BJ226MG-T 007TR CRCW0603xxKxFKEA CRCW060310K0FKEA PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    lmk212bj226

    Contextual Info: AMS2115 FAST TRANSIENT RESPONSE LDO CONTROLLER General Description Features The AMS2115 is a single IC controller that drives an external N Channel MOSFET as a source follower to produce a fast transient response, low dropout voltage regulator. The fast transient load


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    AMS2115 AMS2115 LMK212BJ226MG-T 007TR CRCW0603xxKxFKEA CRCW060310K0FKEA AMS2115S lmk212bj226 PDF

    Contextual Info: xDSL ModemRouter Table of Contents DC/DC BUCK CONVERTER, DC/DC BUCK CONVERTER, Energy


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    1N4148WS-V 500mA BAT54A-V 200mA; OT-23 BAT54W-V OD123 BAV99-V OD-323 PDF