SI4004 Search Results

S10-1617

Contextual Info: SPICE Device Model Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si4004DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si4004

Contextual Info: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: lOOOpFj 2 K V ELEC TRIC A L SPEC IFIC ATIO N S: 1.0 TU R N S 2 .0 INDUCTANCE: 3 .0 LEAKAG E 4 .0 INTERW INDING 5 .0 DC NDTES RATIO: P 6 - P 5 - P 4 (P 3 - P 2 - P 1 ) : (J 6 - J 3 ) : (J 2 - J 1 ) (P 6 - P 4 (P 3 - P 1 INDUCTANCE: 350uH 350uH P6-P4 P3-P1

Contextual Info: ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 6 - P 8 - P 3 : (J 6 -J 3 ) ( P 2 - P 7 - P 1 ) : (J 2 -J 1 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 ) (P 6 -P 8 )= (P 8 -P 3 )

40048

Contextual Info: lOOOpF I 2 K V 1 ! 1 PB 75 -A A /V 1 ! 1 75 ÎP2) -AA/V- ELECTRICAL SPECIFICATIONS: NDTES 1.0 T U R N S RATIO : ( P 6 - P 5 - P 4 ) (P 3 -P 2 -P 1 ) : (J 6 -J 3 ) : (J 2 -J 1 ) 2.0 INDUCTANCE : 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0

CP2201EB

Abstract: cp220x Wireless markup language abstract LM015 CP2201 Silabs AN237 AN292 "power sourcing equipment" F340
Contextual Info: AN292 EMBEDDED ETHERNET SYSTEM DESIGN GUIDE Relevant Devices This application note applies to the following devices: CP2200, CP2201 1. Introduction Embedded systems today are small, fast, and very powerful. Embedded connectivity stands at the forefront of harnessing the power of today’s embedded systems.

1J54

Abstract: SI-4Q040
Contextual Info: PORTS 2,3 & 4 IQOOpF ; 2K V PORT 1 Irt \r o/ P7j J/ Jo (Pf if (p4Ì \y (po) J4n ( p i) 11 (p?) N f lT F S 1,0 P IN S WITHDUT E L E C T R IC A L C D N N E C T ID N ARE DM ITTED, InNet T e c h n o l o g i e s httpi//*iwiv.lnnet-'tech.con Inc. Siewart C onnecior System s

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Contextual Info: P 8 > -^ 8 U U U U • -ÄUUUO — © (pél j » r m - -js r r r r ^ - ELECTRICAL SPECIFICATIONS: NOTE: PIN S NOT E LE C T R IC A LL Y CONNECTED ARE EMITTED, OPERATING TEMPERATURE RANGE: —40"C TO +85°C 1.0 INDUCTANCE: 65 uH TYP @.01V, 10KHz 2.0 DC RESISTANCE: P 6 - J6

40049

Contextual Info: lOOOpFj 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: P 6 - P 5 - P 4 (P 3 - P 2 - P 1 ) : (J 6 - J 3 ) : (J 2 - J 1 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: (J 6 - J 3 ) = (J2- J1 ) (P 6 - P 4

EN555

Abstract: 2p1t
Contextual Info: IQOQpF 2KV E L E C T R IC A L SPEC IFIC ATIO N S' 1.0 TURNS RATIO P 6 - P 5 - P 4 ) N flT F S 1.0 PINS WITHOUT ELECTRICAL CONNECTION ARE OMITTED. i 1C T • 1 C T ± 3% i ( J & -J 3 ) ' 1CT ! 1CT ± 37. <P 3 -P2-P 1) ■ ( J 2 - J 1 ) 2.0 INDUCTANCE CP6-P4)

J22CA

Contextual Info: lOOOpFj £ K V E L E C T R I C A L S P E C IF I C A T IO N S ' 1.0 T U R N S R A T IO < P 6 - P 5 - P 4 > < P 3 -P 2 -P 1 > 2.0 IN D U C T A N C E 3.0 NDTES i < J 2 -J1 > i ic t : e ± 3 •/. P 6 -P 4 ! 3 5 0 uH MIN. g 0.1V , lOOKHz, 8mA DC B ia s (P 3 -P D

CP2201EB

Abstract: CP220x Wireless markup language abstract LM015 programmer schematic tcp embedded AN292 6605752-1 6605752 embedded system projects pdf free download Silabs
Contextual Info: AN292 E MBEDDED E T H E R N E T S Y S T E M D ESIGN G UIDE Relevant Devices This application note applies to the following devices: CP2200, CP2201 1. Introduction Embedded systems today are small, fast, and very powerful. Embedded connectivity stands at the forefront