SI3993CDV Search Results
SI3993CDV Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI3993CDV-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 30V 2.9A 6-TSOP | Original | 203.75KB |
SI3993CDV Price and Stock
Vishay Intertechnologies SI3993CDV-T1-GE3Trans MOSFET P-CH 30V 2.9A 6-Pin TSOP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3993CDV-T1-GE3 | 45,000 | 3,000 |
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SI3993CDV-T1-GE3 | Tape & Reel | 2,990 | 10 |
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| SI3993CDV-T1-GE3 | Cut Tape | 2,990 | 1 |
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| SI3993CDV-T1-GE3 | Tape & Reel | 3,000 |
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SI3993CDV-T1-GE3 | Reel | 3,000 |
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SI3993CDV-T1-GE3 | 45 |
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SI3993CDV-T1-GE3 | 3,000 |
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SI3993CDV-T1-GE3 | Tape & Reel | 27,000 | 3,000 |
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SI3993CDV-T1-GE3 | 10 Weeks | 3,000 |
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SI3993CDV-T1-GE3 | 15 Weeks | 3,000 |
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Vishay Siliconix SI3993CDV-T1-GE3SI3993CDV-T1-GE3 DUAL P-CHANNEL MOSFET TRANSISTOR, 2.3 A, 30 V, 6-PIN TSOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3993CDV-T1-GE3 | Bulk | 20 |
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Vishay Intertechnologies SI3993CDVT1GE3DUAL P-CHANNEL 30 V (D-S) MOSFET Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3993CDVT1GE3 | 11,688 |
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SI3993CDV Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SI3993CDV-T1-GE3
Abstract: si3993dvt1e3 si3993dv-t1-e3 SI3993CDV
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si3993cdvsi3993dvsi3993cdv-t1-ge3si3993dv-t1-ge3+3 | |
marking G2
Abstract: si3993
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si3993cdv2002/95/ecsi3993cdv-t1-ge32011/65/eu+3 | |
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Contextual Info: New Product Si3993CDV Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.111 at VGS = - 10 V - 2.9 0.188 at VGS = - 4.5 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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si3993cdv2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: Si3993CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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si3993cdvan6096334u2142u+5 | |
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Contextual Info: New Product Si3993CDV Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.111 at VGS = - 10 V - 2.9 0.188 at VGS = - 4.5 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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si3993cdv2002/95/ec2011/65/eu12-mar-12 | |
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Contextual Info: New Product Si3993CDV Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.111 at VGS = - 10 V - 2.9 0.188 at VGS = - 4.5 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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si3993cdv2002/95/ecsi3993cdv-t1-ge311-mar-11 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 |