SI3993CDV Search Results
SI3993CDV Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SI3993CDV-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 30V 2.9A 6-TSOP | Original | 203.75KB |
SI3993CDV Price and Stock
Vishay Siliconix SI3993CDV-T1-GE3MOSFET 2P-CH 30V 2.9A 6TSOP |
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SI3993CDV-T1-GE3 | Digi-Reel | 19,902 | 1 |
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SI3993CDV-T1-GE3 | 12,000 | 3,000 |
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SI3993CDV-T1-GE3 | 12,000 | 1 |
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Vishay Intertechnologies SI3993CDV-T1-GE3MOSFETs -30V Vds 20V Vgs TSOP-6 |
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SI3993CDV-T1-GE3 | 18,203 |
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SI3993CDV-T1-GE3 | 60,000 | 3,000 |
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SI3993CDV-T1-GE3 | Reel | 3,000 |
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SI3993CDV-T1-GE3 | 45 |
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SI3993CDV-T1-GE3 | Reel | 3,000 | 3,000 |
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SI3993CDV-T1-GE3 | 16 Weeks | 3,000 |
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SI3993CDV-T1-GE3 | 41,990 |
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SI3993CDV-T1-GE3 | 15 Weeks | 3,000 |
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SI3993CDV-T1-GE3 | 30,000 | 3,000 |
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SI3993CDV-T1-GE3 | 52,607 |
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Others SI3993CDVTGE3AVAILABLE EU |
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SI3993CDVTGE3 | 4,500 |
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Vishay Intertechnologies SI3993CDVT1GE3DUAL P-CHANNEL 30 V (D-S) MOSFET Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA |
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SI3993CDVT1GE3 | 14,194 |
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Vishay Huntington SI3993CDV-T1-GE3 |
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SI3993CDV-T1-GE3 | 4 |
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SI3993CDV-T1-GE3 | 38,490 |
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SI3993CDV Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SI3993CDV-T1-GE3
Abstract: si3993dvt1e3 si3993dv-t1-e3 SI3993CDV
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Si3993CDV Si3993DV Si3993CDV-T1-GE3 Si3993DV-T1-GE3 Si3993DV-T1-E3 23-Mar-11 si3993dvt1e3 | |
marking G2
Abstract: si3993
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Si3993CDV 2002/95/EC Si3993CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking G2 si3993 | |
Contextual Info: New Product Si3993CDV Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.111 at VGS = - 10 V - 2.9 0.188 at VGS = - 4.5 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si3993CDV 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si3993CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si3993CDV AN609, 6334u 2142u 7360m 3984u 6013u 5871m 8879m | |
Contextual Info: New Product Si3993CDV Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.111 at VGS = - 10 V - 2.9 0.188 at VGS = - 4.5 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si3993CDV 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product Si3993CDV Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.111 at VGS = - 10 V - 2.9 0.188 at VGS = - 4.5 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si3993CDV 2002/95/EC Si3993CDV-T1-GE3 11-Mar-11 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |