SI2374DS Search Results
SI2374DS Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI2374DS-T1-BE3 | Vishay Siliconix | N-CHANNEL 20-V (D-S) MOSFET | Original | 259.68KB | 10 | ||
| SI2374DS-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 20V SOT23 | Original | 258.56KB |
SI2374DS Price and Stock
Vishay Siliconix SI2374DS-T1-GE3MOSFET N-CH 20V 4.5A/5.9A SOT23 |
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SI2374DS-T1-GE3 | Cut Tape | 32,263 | 1 |
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Vishay Siliconix SI2374DS-T1-BE3N-CHANNEL 20-V (D-S) MOSFET |
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SI2374DS-T1-BE3 | Cut Tape | 2,301 | 1 |
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Vishay Intertechnologies SI2374DS-T1-GE3- Tape and Reel (Alt: SI2374DS-T1-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2374DS-T1-GE3 | Reel | 3,000 | 32 Weeks | 3,000 |
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SI2374DS-T1-GE3 | 41,508 |
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SI2374DS-T1-GE3 | 6,000 | 3,000 |
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SI2374DS-T1-GE3 | 6,000 | 30 Weeks | 3,000 |
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SI2374DS-T1-GE3 | Reel | 6,000 | 3,000 |
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SI2374DS-T1-GE3 | 323 |
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SI2374DS-T1-GE3 | 2,760 |
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SI2374DS-T1-GE3 | Reel | 81,000 | 3,000 |
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SI2374DS-T1-GE3 | 2,545 | 1 |
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SI2374DS-T1-GE3 | Reel | 81,000 | 3,000 |
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SI2374DS-T1-GE3 | 9,000 | 34 Weeks | 6,000 |
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SI2374DS-T1-GE3 | 33 Weeks | 3,000 |
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Vishay Intertechnologies SI2374DS-T1-BE3- Tape and Reel (Alt: SI2374DS-T1-BE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2374DS-T1-BE3 | Reel | 3,000 | 32 Weeks | 3,000 |
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SI2374DS-T1-BE3 | 2,152 |
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SI2374DS-T1-BE3 | Bulk | 3,000 |
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SI2374DS-T1-BE3 | Reel | 87,000 | 3,000 |
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SI2374DS-T1-BE3 | 33 Weeks | 3,000 |
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Vishay Intertechnologies SI2374DST1GE3AVAILABLE EU |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2374DST1GE3 | 120 |
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SI2374DS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si2374DS www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. ID (A) d 0.030 at VGS = 4.5 V 5.9 0.034 at VGS = 2.5 V 5.5 0.041 at VGS = 1.8 V 5 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested |
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Si2374DS OT-23 O-236) Si2374DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SPICE Device Model Si2374DS www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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Si2374DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si2374DS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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Si2374DS AN609, 5067u 6461u 1836m 9299u 3375m 6027u 7915m 26-Feb-2014 |