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    SI2374DS Datasheets (2)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI2374DS-T1-BE3
    		Vishay Siliconix N-CHANNEL 20-V (D-S) MOSFET Original PDF 259.68KB 10
    SI2374DS-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 20V SOT23 Original PDF 258.56KB
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    SI2374DS Price and Stock

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    Vishay Intertechnologies SI2374DS-T1-GE3

    Transistor: N-MOSFET; unipolar; 20V; 4.7A; Idm: 25A; 1.1W; SOT23
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    TME SI2374DS-T1-GE3 4 1
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    Avnet Americas () SI2374DS-T1-GE3 Ammo Pack 1
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    SI2374DS-T1-GE3 Tape & Reel 19 Weeks 3,000
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    Mouser Electronics SI2374DS-T1-GE3
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    SI2374DS-T1-GE3 Tape & Reel 1,099 10
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    SI2374DS-T1-GE3 Tape & Reel 100
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    SI2374DS-T1-GE3 Tape & Reel 3,000
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    Bristol Electronics SI2374DS-T1-GE3 323
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    Quest Components () SI2374DS-T1-GE3 2,760
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    SI2374DS-T1-GE3 2,760
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    SI2374DS-T1-GE3 308
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    SI2374DS-T1-GE3 308
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    Chip 1 Exchange SI2374DS-T1-GE3 2
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    Avnet Asia SI2374DS-T1-GE3 21 Weeks 6,000
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    EBV Elektronik SI2374DS-T1-GE3 27 Weeks 3,000
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    Vishay Intertechnologies SI2374DS-T1-BE3

    Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.7A; Idm: 25A
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    TME SI2374DS-T1-BE3 3,000
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    Avnet Americas SI2374DS-T1-BE3 Tape & Reel 19 Weeks 3,000
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    Mouser Electronics SI2374DS-T1-BE3 22,650
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    Newark () SI2374DS-T1-BE3 Bulk 3,000
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    SI2374DS-T1-BE3 Cut Tape 5
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    TTI SI2374DS-T1-BE3 Reel 9,000 3,000
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    EBV Elektronik SI2374DS-T1-BE3 27 Weeks 3,000
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    Vishay Intertechnologies SI2374DST1GE3

    N-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
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    ComSIT USA SI2374DST1GE3 7,130
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    Vishay Huntington SI2374DS-T1-GE3

    MOSFET N-CHAN 20V SOT23
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    Win Source Electronics SI2374DS-T1-GE3 31,910
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    SI2374DS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si2374DS www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. ID (A) d 0.030 at VGS = 4.5 V 5.9 0.034 at VGS = 2.5 V 5.5 0.041 at VGS = 1.8 V 5 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested


    Original     		si2374dsot-23o-236si2374ds-t1-ge3+42002/95/ec2011/65/eujs709a02-oct-12 PDF

    Contextual Info: SPICE Device Model Si2374DS www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		si2374ds2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: Si2374DS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		si2374dsan6095067u6461u+61836m9299u3375m6027u7915m26-feb-2014 PDF