SI236 Search Results

si2366

Contextual Info: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: SI236N Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)15Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)200õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI2366DS

Contextual Info: SPICE Device Model Si2366DS Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si2367DS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

si2365eds

Abstract: SI2365EDS-T1-GE3
Contextual Info: Si2365EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0320 at VGS = - 4.5 V - 5.9 0.0410 at VGS = - 2.5 V - 5.2 0.0675 at VGS = - 1.8 V - 4.3 a Qg (Typ.) 13.8 nC TO-236 (SOT-23) G APPLICATIONS

Marking code H6

Contextual Info: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si2367DS

Contextual Info: SPICE Device Model Si2367DS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Marking code H6

Abstract: si2366 si23
Contextual Info: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI2367DS

Contextual Info: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21

Si2367DS

Abstract: H7 MARKING
Contextual Info: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21

Contextual Info: SPICE Device Model Si2369DS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Contextual Info: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si2367

Abstract: h7 sot23 diode SI2367DS SI236
Contextual Info: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21

5506

Abstract: AN609 Si2367DS
Contextual Info: Si2367DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: SPICE Device Model Si2366DS www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model Si2365EDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)d VDS (V) RDS(on) (Ω) 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21

SI2369DS

Contextual Info: Si2369DS Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)a

TIL78

Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of

2SK19GR

Abstract: X70a 2SK19Y DFNA3-100 K1201 BFS28 DG-34 transistor fet 2sk19gr A641 NPN transistor k1001
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T