SI232 Search Results

Si2329DS

Abstract: si2329 si23
Contextual Info: SPICE Device Model Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

si2329

Abstract: SI2329DS
Contextual Info: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8

A96V

Abstract: SI2328DS-T1-E3 Si2328DS
Contextual Info: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 Si2328DS-T1—E3 (Lead (Pb)-Free)

MARKING 33A DIODE SOT23

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2321 Features • • • • • • • • P-Channel Enhancement Mode -20V,-2.9A, RDS ON =57mΩ@VGS=-4.5V

Contextual Info: Si2327DS Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A) 2.35 at VGS = - 10 V - 0.49 2.45 at VGS = - 6.0 V - 0.48 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Ultra Low On-Resistance

SI2328DS-T1-GE3

Contextual Info: Si2328DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 100 0.250 at VGS = 10 V 1.5 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg and UIS Tested • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si2325DS Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 1.2 at VGS = - 10 V - 0.69 1.3 at VGS = - 6.0 V - 0.66 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Ultra Low On-Resistance

Si2321DS

Contextual Info: SPICE Device Model Si2321DS Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si2327

Abstract: Si2327DS 50256r
Contextual Info: SPICE Device Model Si2327DS Vishay Siliconix P-Channel 200-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si2328DS

Abstract: Si2328DS-T1-E3 A96V
Contextual Info: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.250 at VGS = 10 V 1.5 • Halogen-free According to IEC 61249-2-21 Available • 100 % Rg Tested • TrenchFET Power MOSFET TO-236 (SOT-23)

74652

Abstract: AN609 Si2321DS
Contextual Info: Si2321DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: SPICE Device Model Si2324DS www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: Si2323CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.039 at VGS = -4.5 V -6e 0.050 at VGS = -2.5 V -5.8 0.063 at VGS = -1.8 V -5.1 VDS (V) -20 Qg (Typ.) 9 nC APPLICATIONS • Load Switch • PA Switch

Contextual Info: Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.234 at VGS = 10 V 2.3 0.267 at VGS = 6 V 2.1 0.278 at VGS = 4.5 V 1.7 VDS (V) 100 Qg (Typ.) 2.9 nC • DC/DC Converters • Load Switch • LED Backlighting in LCD TVs

Contextual Info: Si2323DDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.039 at VGS = - 4.5 V - 5.3 0.050 at VGS = - 2.5 V - 4.7 0.075 at VGS = - 1.8 V - 3.8 d Qg (Typ.) 13.6 nC APPLICATIONS TO-236 (SOT-23) G

Contextual Info: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

A96V

Abstract: Si2326DS
Contextual Info: Si2326DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2326DS (D6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

SI2324DS

Abstract: Si2324DS-T1-GE3 si2324
Contextual Info: Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.234 at VGS = 10 V 2.3 0.267 at VGS = 6 V 2.1 0.278 at VGS = 4.5 V 1.7 VDS (V) 100 Qg (Typ.) 2.9 nC • DC/DC Converters • Load Switch • LED Backlighting in LCD TVs

Contextual Info: Si2328DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 100 0.250 at VGS = 10 V 1.5 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg and UIS Tested • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Si2323CDS

Abstract: 0749
Contextual Info: SPICE Device Model Si2323CDS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si2323CDS

Contextual Info: Si2323CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = - 4.5 V - 6e 0.050 at VGS = - 2.5 V - 5.8 0.063 at VGS = - 1.8 V - 5.1 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition

SI2323DS-T1-E3

Abstract: Si2323CDS Si2323DS si2323cdst1ge3 Si2323DS-T1-GE3 Si2323DS-T1
Contextual Info: Specification Comparison Vishay Siliconix Si2323CDS vs. Si2323DS Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2323CDS-T1-GE3 replaces Si2323DS-T1-GE3 Si2323CDS-T1-GE3 replaces Si2323DS-T1-E3 Si2323CDS-T1-GE3 replaces Si2323DS-T1

Si2323CDS

Abstract: 5218 AN609
Contextual Info: Si2323CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

si2321

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2321 Features • • • • • • • • • Halogen free available upon request by adding suffix "-HF"