SI19 Search Results

si1922

Abstract: SI1922EDH
Contextual Info: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21

Si1905BDH

Contextual Info: New Product Si1905BDH Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.542 at VGS = - 4.5 V - 0.63 0.798 at VGS = - 2.5 V - 0.52 1.2 at VGS = - 1.8 V - 0.20 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS

Contextual Info: SPICE Device Model Si1902CDL www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si1926DL www.vishay.com Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) MAX. ID (A) 1.4 at VGS = 10 V 0.37 3 at VGS = 4.5 V 0.25 Qg (nC) TYP. 0.47 D1 6 • 100 % Rg tested • ESD protected: 1800 V • Material categorization:

Si1902DL-T1-E3

Abstract: Si1902DL Si1902DL-T1-GE3
Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 2.5 V Rated

Si1926DL-T1-GE3

Abstract: SI1926DL-T1-E3
Contextual Info: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

si1965

Contextual Info: Si1965DH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 12 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) a

SI1912EDH-T1-E3

Abstract: Si1912EDH Si1912EDH-T1-GE3 "MARKING CODE CA"
Contextual Info: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated

Si1917EDH

Abstract: si1917edh-t1-e3 marking code 3K
Contextual Info: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition

71080

Abstract: Si1902DL
Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code

Si1917EDH

Contextual Info: SPICE Device Model Si1917EDH Dual P-Channel 12-V D-S MOSFET with Copper Leadframe Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range

74340

Abstract: Si1958DH-T1-E3
Contextual Info: New Product Si1958DH Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.205 at VGS = 4.5 V 1.3a 0.340 at VGS = 2.5 V 1.3a • TrenchFET Power MOSFET Qg (Typ) 1.2 nC APPLICATIONS RoHS • Load Switch for Portable Applications

74398

Abstract: Si1972DH Si1972DH-T1-E3
Contextual Info: Si1972DH Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 Qg (Typ) • TrenchFET Power MOSFET APPLICATIONS 0.91 nC SOT-363 SC-70 (6-LEADS)

Si1905BDH

Contextual Info: SPICE Device Model Si1905BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si1972DH Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 VDS (V) 30 Qg (Typ.) 0.91 nC • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS)

SOT-363 marking CF

Abstract: si1988 SI1988DH 62109 74296
Contextual Info: Si1988DH Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.168 at VGS = 4.5 V 1.3a 0.200 at VGS = 2.5 V 1.3a 0.250 at VGS = 1.8 V a 1.3 Qg (Typ) • TrenchFET Power MOSFET APPLICATIONS

SI1958

Abstract: 74340 Si1958DH-T1-E3 061c marking s1 sot363
Contextual Info: New Product Si1958DH Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.205 at VGS = 4.5 V 1.3a 0.340 at VGS = 2.5 V 1.3a • TrenchFET Power MOSFET Qg (Typ) 1.2 nC APPLICATIONS RoHS • Load Switch for Portable Applications

S101-05

Abstract: AN816 SI1912EDH-T1
Contextual Info: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated

Contextual Info: Si1913DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product Si1902CDL Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.235 at VGS = 4.5 V 1.1 0.306 at VGS = 2.5 V 1 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

marking code PB

Abstract: SI1900DL-T1-E3 Si1900DL Si1900DL-T1
Contextual Info: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB

Contextual Info: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition

SI1902CDL

Abstract: marking code pe "Switching diode" 6pin
Contextual Info: New Product Si1902CDL Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.235 at VGS = 4.5 V 1.1 0.306 at VGS = 2.5 V 1 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si1904EDH Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS 1.04 @ VGS = 2.5 V