SI140 Search Results

Si1405DL

Contextual Info: Si1405DL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.125 at VGS = - 4.5 V ± 1.8 0.160 at VGS = - 2.5 V ± 1.6 0.210 at VGS = - 1.8 V ± 1.4 • Halogen-free According to IEC 61249-2-21 Definition

Si1406DH

Contextual Info: Si1406DH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.9 0.075 @ VGS = 2.5 V 3.6 0.096 @ VGS = 1.8 V 3.2 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package

Qrr20

Contextual Info: Si1403BDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.150 @ VGS = −4.5 V −1.5 0.175 @ VGS = −3.6 V −1.4 0.265 @ VGS = −2.5 V −1.2 D TrenchFETr Power MOSFET Qg (Typ) 2.9 SOT-363

TB-17

Contextual Info: New Product Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS

74888

Contextual Info: SPICE Device Model Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1400DL

Abstract: Si1400DL-T1-E3
Contextual Info: New Product Si1400DL Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.150 at VGS = 4.5 V 1.7 0.235 at VGS = 2.5 V 1.3 • TrenchFET Power MOSFET: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363

marking AF sc70-6

Contextual Info: Si1404BDH New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (W) 30 0.238 @ VGS = 4.5 V 1.9 0.380 @ VGS = 2.5 V 1.51 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS APPLICATIONS 1 1 nC 1.1 COMPLIANT

sc 0645

Contextual Info: Si1405BDH Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 Qg (Typ.) 3.67 nC • Halogen-free According to IEC 61249-2-21

Si1401

Abstract: SI1401EDH-T1-GE3 si1401e
Contextual Info: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21

AN609

Contextual Info: Si1405BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si1407DL

Contextual Info: SPICE Device Model Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74843

Abstract: AN609
Contextual Info: Si1404BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74131

Contextual Info: SPICE Device Model Si1404BDH Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

DIODE 76A

Abstract: SC70-6 Si1404DH Si1404DH-T1 Si1404DH-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si1404BDH vs. Si1404DH Description: Package: Pin Out: N-Channel, 2.5 V G-S MOSFET SC70-6 Identical Part Number Replacements: Si1404BDH-T1-E3 Replaces Si1404DH-T1-E3 Si1404BDH-T1-E3 Replaces Si1404DH-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

transistor 6822

Abstract: 6822 transistors 6822 6822 transistor 6822 equivalent 9940 SI1402DH AN609
Contextual Info: Si1402DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

4946

Abstract: 4946 mosfet AN609 Si1407DL
Contextual Info: Si1407DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si1404DH

Contextual Info: SPICE Device Model Si1404DH Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1400DL SPICE Device Model

Abstract: Si1400DL
Contextual Info: SPICE Device Model Si1400DL Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1405DL

Abstract: 71500 uA 072
Contextual Info: SPICE Device Model Si1405DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1403DL

Contextual Info: SPICE Device Model Si1403DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1406DH

Contextual Info: SPICE Device Model Si1406DH Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1400DL

Contextual Info: SPICE Device Model Si1400DL Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1403DL

Contextual Info: SPICE Device Model Si1403DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si1400DL Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.150 at VGS = 4.5 V 1.7 0.235 at VGS = 2.5 V 1.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 2.5 V Rated