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    SI1401 Search Results

    SI1401 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI1401EDH-T1-BE3
    		Vishay Siliconix MOSFET P-CH 12V 4A/4A SC70-6 Original PDF 270.7KB
    SI1401EDH-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 4A SC-70-6 Original PDF 12
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    SI1401 Price and Stock

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    Vishay Siliconix SI1401EDH-T1-GE3

    MOSFET P-CH 12V 4A SC70-6
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    DigiKey () SI1401EDH-T1-GE3 Cut Tape 14,100 1
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    SI1401EDH-T1-GE3 Digi-Reel 14,100 1
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    SI1401EDH-T1-GE3 Reel 12,000 3,000
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    Vishay Siliconix SI1401EDH-T1-BE3

    MOSFET P-CH 12V 4A/4A SC70-6
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    DigiKey () SI1401EDH-T1-BE3 Digi-Reel 1,980 1
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    SI1401EDH-T1-BE3 Cut Tape 1,980 1
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    SI1401EDH-T1-BE3 Reel 3,000
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    Samtec Inc FSI-140-10-L-D-AB

    CONN STACKING 80POS SMD GOLD
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    DigiKey FSI-140-10-L-D-AB Tube 13
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    Avnet Americas FSI-140-10-L-D-AB Tube 1
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    Mouser Electronics FSI-140-10-L-D-AB
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    Samtec Inc FSI-140-10-L-D-M-AB

    CONN STACKING 80POS SMD GOLD
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    Mouser Electronics FSI-140-10-L-D-M-AB
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    Master Electronics FSI-140-10-L-D-M-AB
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    Sager FSI-140-10-L-D-M-AB 1
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    Samtec Inc FSI-140-10-L-D-AD-P

    CONN STACKING 80POS SMD GOLD
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    DigiKey FSI-140-10-L-D-AD-P Tube 13
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    Avnet Americas FSI-140-10-L-D-AD-P Tube 1
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    Mouser Electronics FSI-140-10-L-D-AD-P
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    Sager FSI-140-10-L-D-AD-P 1
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    SI1401 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si1401

    Abstract: SI1401EDH-T1-GE3 si1401e
    Contextual Info: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		Si1401EDH 2002/95/EC OT-363 SC-70 Si1401EDH-T1-GE3 18-Jul-08 Si1401 si1401e PDF

    Contextual Info: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		Si1401EDH 2002/95/EC OT-363 SC-70 Si1401EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		Si1401EDH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si1401e

    Abstract: 70080
    Contextual Info: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		Si1401EDH 2002/95/EC OT-363 SC-70 Si1401EDH-T1-GE3 11-Mar-11 si1401e 70080 PDF

    si1401e

    Contextual Info: Si1401EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si1401EDH AN609, 21-May-10 si1401e PDF

    Contextual Info: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		Si1401EDH 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si7141

    Abstract: SiA447DJ SI7615A
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF