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SI1012 Datasheets (21)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI1012-A-GM	Silicon Laboratories	RF Transceivers, RF/IF and RFID, IC TXRX MCU + EZRADIOPRO	Original	PDF		1
SI1012-A-GMR	Silicon Laboratories	RF Transceivers, RF/IF and RFID, IC TXRX MCU + EZRADIOPRO	Original	PDF		1
SI1012-C-GM2	Silicon Laboratories	RF Transceivers, RF/IF and RFID, 16KB 768B RAM 13DB XCVR 42LGA	Original	PDF		384
SI1012-C-GM2R	Silicon Laboratories	RF Transceivers, RF/IF and RFID, IC MCU 16KB FLASH EZ PRO 42LGA	Original	PDF		384
SI1012CR-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 630MA SC-75A	Original	PDF		9
Si1012R	Vishay Intertechnology	N-Channel 1.8-V (G-S) MOSFET	Original	PDF	42.93KB	5
SI1012R	Vishay Siliconix	MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,	Original	PDF	88.63KB	6
SI1012R	Vishay Siliconix	N-Channel 1.8-V (G-S) MOSFET	Original	PDF	48.52KB	5
Si1012R-E3	Vishay	Transistor Mosfet N-CH 20V 0.5A 3SC-75A	Original	PDF	92.04KB	6
Si1012R-T1	Vishay	Transistor Mosfet N-CH 20V 0.5A 3SC-75A REEL	Original	PDF	92.04KB	6
Si1012R-T1	Vishay Intertechnology	N-Channel 1.8-V (G-S) MOSFET	Original	PDF	42.93KB	5
Si1012R-T1-E3	Vishay	Transistor Mosfet N-CH 20V 0.5A 3SC-75A REEL	Original	PDF	92.04KB	6
SI1012R-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 500MA SC-75A	Original	PDF		11
SI1012R-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 500MA SC-75A	Original	PDF		11

SI1012-TP	Micro Commercial	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL MOSFET, SOT-523 PACKAG	Original	PDF	613.78KB
Si1012X	Vishay Intertechnology	N-Channel 1.8-V (G-S) MOSFET	Original	PDF	42.93KB	5
Si1012X	Vishay Siliconix	N-Channel 1.8-V (G-S) MOSFET	Original	PDF	48.52KB	5
Si1012X-E3	Vishay	Transistor Mosfet N-CH 20V 0.5A 3SC-89	Original	PDF	92.04KB	6
Si1012X-T1	Vishay Intertechnology	N-Channel 1.8-V (G-S) MOSFET	Original	PDF	42.93KB	5
SI1012X-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 500MA SC89-3	Original	PDF		11

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Analog Power AMSI1012X MOSFET N-CH 60V 0.5A SC89-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AMSI1012X	Bulk	10,000		1	1 $0.66 10 $0.44 100 $0.40 1000 $0.29 10000 $0.17	Buy Now
igus Inc JSI-1012-06 BEARING 5/8"IDX0.750"ODX3/8"W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	JSI-1012-06	Bulk	300		1	1 $3.60 10 $3.11 100 $3.11 1000 $3.11 10000 $3.11	Buy Now
igus Inc JSI-1012-12 BEARING 5/8"IDX0.750"ODX3/4"W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	JSI-1012-12	Bulk	274		1	1 $4.08 10 $3.54 100 $3.54 1000 $3.54 10000 $3.54	Buy Now
Silicon Laboratories Inc SI1012-C-GM2 IC RF TXRX+MCU ISM<1GHZ 42LGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI1012-C-GM2	Tray	228		1	1 $13.69 10 $11.71 100 $10.13 1000 $9.01 10000 $8.81	Buy Now
Mouser Electronics	SI1012-C-GM2					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SI1012-C-GM2		14,574			1 - 10 - 100 - 1000 - 10000 -	Get Quote
igus Inc JSI-1012-04 BEARING 5/8"IDX0.750"ODX1/4"W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	JSI-1012-04	Bulk	200		1	1 $3.36 10 $2.91 100 $2.91 1000 $2.91 10000 $2.91	Buy Now

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SI1012 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si1012CR 11-Mar-11	PDF
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated	Original	Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SC-75 Abstract: SC-75A SC-89 Si1012R-T1 Si1012X-T1 Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated	Original	Si1012R/X SC-75A SC-89 Si1012R-Ted 08-Apr-05 SC-75 SC-89 Si1012R-T1 Si1012X-T1	PDF
Si1012X-T1-GE3 Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated	Original	Si1012R/X 2002/95/EC SC-75A SC-89 18-Jul-08 Si1012X-T1-GE3	PDF
Si1012R Contextual Info: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si1012R S-51298Rev. 27-Jul-05	PDF
Si1012R Contextual Info: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si1012R 400mA 150mA, 200mA, 250mA 19-Feb-04	PDF
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated	Original	Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3	Original	Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI1012X-T1-GE3 Abstract: si1012r-t1-ge3 Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated	Original	Si1012R/X 2002/95/EC SC-75A SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI1012X-T1-GE3 si1012r-t1-ge3	PDF
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21	Original	Si1012CR 2002/95/EC SC-75A 11-Mar-11	PDF
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21	Original	Si1012CR 2002/95/EC SC-75A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated	Original	Si1012R/X 2002/95/EC SC-75A SC-89 11-Mar-11	PDF
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated	Original	Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
AN609 Abstract: Si1012R n mosfet pspice parameters Contextual Info: Si1012R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si1012R AN609 02-Apr-07 n mosfet pspice parameters	PDF

Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated	Original	Si1012R/X SC-75A SC-89 S-50366--Rev. 28-Feb-05	PDF
SC-75 Abstract: SC-75A SC-89 PC2255 Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated	Original	Si1012R/X 2002/95/EC SC-75A SC-89 11-Mar-11 SC-75 SC-89 PC2255	PDF
Si1012R-T1-E3 Abstract: Si1012X-T1-E3 Si1012X-T1-GE3 SC-75 SC-75A SC-89 SI1012R-T1-GE3 Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • Halogen-free Option Available TrenchFET Power MOSFET: 1.8 V Rated	Original	Si1012R/X SC-75A SC-89 Si1012R-T1-E3 Si1012X-T1-E3 Si1012X-T1-GE3 SC-75 SC-89 SI1012R-T1-GE3	PDF
Si1012CR-T1-GE3 Abstract: SI1012CR Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si1012CR 2002/95/EC SC-75A Si1012CR-T1-GE3 11-Mar-11	PDF
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated	Original	Si1012CR SC-75A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SI1012X-T1-E3 Abstract: Si1012X-T1-GE3 SI1012R/X SC-75 SC-75A SC-89 Si1012R-T1-E3 S-81543-Rev Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • Halogen-free Option Available TrenchFET Power MOSFET: 1.8 V Rated	Original	Si1012R/X SC-75A SC-89 18-Jul-08 SI1012X-T1-E3 Si1012X-T1-GE3 SC-75 SC-89 Si1012R-T1-E3 S-81543-Rev	PDF
Contextual Info: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3	Original	Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SC-75 Abstract: SC-75A SC-89 Si1012R Si1012X Contextual Info: Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,	Original	Si1012R/X S-02464--Rev. 25-Oct-00 SC-75 SC-75A SC-89 Si1012R Si1012X	PDF
Si1012-A Abstract: SI1012-A-GM CIP-51 Contextual Info: Si1012-A Ultra-Low Power 16 kB, 12-bit ADC MCU with Integrated 240–960 MHz Transceiver Transceiver Features Supply Voltage: 1.8 to 3.6 V - Typical sleep mode current < 0.1 µA; retains state and RAM contents over full supply range; fast wakeup of < 2 µs	Original	Si1012-A 12-bit 16-bit 32-bit 512-byte SI1012-A-GM CIP-51	PDF
SI1012CR Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated	Original	Si1012CR SC-75A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF

SI1012 Search Results

SI1012 Equivalents

SI1012 Datasheets (21)

SI1012 Price and Stock

Analog Power AMSI1012X

igus Inc JSI-1012-06

igus Inc JSI-1012-12

Silicon Laboratories Inc SI1012-C-GM2

igus Inc JSI-1012-04

SI1012 Datasheets Context Search

SC-75

Si1012X-T1-GE3

Si1012R

Si1012R

SI1012X-T1-GE3

AN609

SC-75

Si1012R-T1-E3

Si1012CR-T1-GE3

SI1012X-T1-E3

SC-75

Si1012-A

SI1012CR