SI1012 Search Results
SI1012 Datasheets (21)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI1012-A-GM | Silicon Laboratories | RF Transceivers, RF/IF and RFID, IC TXRX MCU + EZRADIOPRO | Original | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1012-A-GMR | Silicon Laboratories | RF Transceivers, RF/IF and RFID, IC TXRX MCU + EZRADIOPRO | Original | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1012-C-GM2 | Silicon Laboratories | RF Transceivers, RF/IF and RFID, 16KB 768B RAM 13DB XCVR 42LGA | Original | 384 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1012-C-GM2R | Silicon Laboratories | RF Transceivers, RF/IF and RFID, IC MCU 16KB FLASH EZ PRO 42LGA | Original | 384 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1012CR-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 630MA SC-75A | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si1012R | Vishay Intertechnology | N-Channel 1.8-V (G-S) MOSFET | Original | 42.93KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1012R | Vishay Siliconix | MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth, | Original | 88.63KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1012R | Vishay Siliconix | N-Channel 1.8-V (G-S) MOSFET | Original | 48.52KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si1012R-E3 |
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Transistor Mosfet N-CH 20V 0.5A 3SC-75A | Original | 92.04KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si1012R-T1 |
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Transistor Mosfet N-CH 20V 0.5A 3SC-75A REEL | Original | 92.04KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si1012R-T1 | Vishay Intertechnology | N-Channel 1.8-V (G-S) MOSFET | Original | 42.93KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si1012R-T1-E3 |
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Transistor Mosfet N-CH 20V 0.5A 3SC-75A REEL | Original | 92.04KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1012R-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 500MA SC-75A | Original | 11 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1012R-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 500MA SC-75A | Original | 11 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI1012-TP |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL MOSFET, SOT-523 PACKAG | Original | 613.78KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si1012X | Vishay Intertechnology | N-Channel 1.8-V (G-S) MOSFET | Original | 42.93KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si1012X | Vishay Siliconix | N-Channel 1.8-V (G-S) MOSFET | Original | 48.52KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si1012X-E3 |
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Transistor Mosfet N-CH 20V 0.5A 3SC-89 | Original | 92.04KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si1012X-T1 | Vishay Intertechnology | N-Channel 1.8-V (G-S) MOSFET | Original | 42.93KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1012X-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 500MA SC89-3 | Original | 11 |
SI1012 Price and Stock
Vishay Siliconix SI1012CR-T1-GE3MOSFET N-CH 20V SC75A |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI1012CR-T1-GE3 | Digi-Reel | 56,472 | 1 |
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SI1012CR-T1-GE3 |
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SI1012CR-T1-GE3 | 81,000 | 1 |
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Silicon Laboratories Inc SI1012-C-GM2IC RF TXRX+MCU ISM<1GHZ 42LGA |
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SI1012-C-GM2 | Tray | 228 | 1 |
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SI1012-C-GM2 |
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SI1012-C-GM2 | 1 |
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Micro Commercial Components SI1012-TPMOSFET N-CH 20V 500MA SOT523 |
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SI1012-TP | Reel |
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igus Inc JSI-1012-16BEARING 5/8"IDX0.750"ODX1"W |
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JSI-1012-16 | Bulk |
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igus Inc JSI-1012-04BEARING 5/8"IDX0.750"ODX1/4"W |
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JSI-1012-04 | Bulk |
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SI1012 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si1012CR 11-Mar-11 | |
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated |
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Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SC-75
Abstract: SC-75A SC-89 Si1012R-T1 Si1012X-T1
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Si1012R/X SC-75A SC-89 Si1012R-Ted 08-Apr-05 SC-75 SC-89 Si1012R-T1 Si1012X-T1 | |
Si1012X-T1-GE3Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated |
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Si1012R/X 2002/95/EC SC-75A SC-89 18-Jul-08 Si1012X-T1-GE3 | |
Si1012RContextual Info: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si1012R S-51298Rev. 27-Jul-05 | |
Si1012RContextual Info: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si1012R 400mA 150mA, 200mA, 250mA 19-Feb-04 | |
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated |
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Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3 |
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Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SI1012X-T1-GE3
Abstract: si1012r-t1-ge3
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Si1012R/X 2002/95/EC SC-75A SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI1012X-T1-GE3 si1012r-t1-ge3 | |
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21 |
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Si1012CR 2002/95/EC SC-75A 11-Mar-11 | |
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21 |
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Si1012CR 2002/95/EC SC-75A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated |
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Si1012R/X 2002/95/EC SC-75A SC-89 11-Mar-11 | |
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated |
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Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
AN609
Abstract: Si1012R n mosfet pspice parameters
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Si1012R AN609 02-Apr-07 n mosfet pspice parameters | |
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Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated |
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Si1012R/X SC-75A SC-89 S-50366--Rev. 28-Feb-05 | |
SC-75
Abstract: SC-75A SC-89 PC2255
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Si1012R/X 2002/95/EC SC-75A SC-89 11-Mar-11 SC-75 SC-89 PC2255 | |
Si1012R-T1-E3
Abstract: Si1012X-T1-E3 Si1012X-T1-GE3 SC-75 SC-75A SC-89 SI1012R-T1-GE3
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Si1012R/X SC-75A SC-89 Si1012R-T1-E3 Si1012X-T1-E3 Si1012X-T1-GE3 SC-75 SC-89 SI1012R-T1-GE3 | |
Si1012CR-T1-GE3
Abstract: SI1012CR
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Si1012CR 2002/95/EC SC-75A Si1012CR-T1-GE3 11-Mar-11 | |
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated |
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Si1012CR SC-75A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SI1012X-T1-E3
Abstract: Si1012X-T1-GE3 SI1012R/X SC-75 SC-75A SC-89 Si1012R-T1-E3 S-81543-Rev
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Si1012R/X SC-75A SC-89 18-Jul-08 SI1012X-T1-E3 Si1012X-T1-GE3 SC-75 SC-89 Si1012R-T1-E3 S-81543-Rev | |
Contextual Info: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3 |
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Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SC-75
Abstract: SC-75A SC-89 Si1012R Si1012X
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Si1012R/X S-02464--Rev. 25-Oct-00 SC-75 SC-75A SC-89 Si1012R Si1012X | |
Si1012-A
Abstract: SI1012-A-GM CIP-51
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Si1012-A 12-bit 16-bit 32-bit 512-byte SI1012-A-GM CIP-51 | |
SI1012CRContextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated |
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Si1012CR SC-75A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |