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SI1012 Datasheets (21)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI1012-A-GM	Silicon Laboratories	RF Transceivers, RF/IF and RFID, IC TXRX MCU + EZRADIOPRO	Original	PDF		1
SI1012-A-GMR	Silicon Laboratories	RF Transceivers, RF/IF and RFID, IC TXRX MCU + EZRADIOPRO	Original	PDF		1
SI1012-C-GM2	Silicon Laboratories	RF Transceivers, RF/IF and RFID, 16KB 768B RAM 13DB XCVR 42LGA	Original	PDF		384
SI1012-C-GM2R	Silicon Laboratories	RF Transceivers, RF/IF and RFID, IC MCU 16KB FLASH EZ PRO 42LGA	Original	PDF		384
SI1012CR-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 630MA SC-75A	Original	PDF		9
Si1012R	Vishay Intertechnology	N-Channel 1.8-V (G-S) MOSFET	Original	PDF	42.93KB	5
SI1012R	Vishay Siliconix	MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,	Original	PDF	88.63KB	6
SI1012R	Vishay Siliconix	N-Channel 1.8-V (G-S) MOSFET	Original	PDF	48.52KB	5
Si1012R-E3	Vishay	Transistor Mosfet N-CH 20V 0.5A 3SC-75A	Original	PDF	92.04KB	6
Si1012R-T1	Vishay	Transistor Mosfet N-CH 20V 0.5A 3SC-75A REEL	Original	PDF	92.04KB	6
Si1012R-T1	Vishay Intertechnology	N-Channel 1.8-V (G-S) MOSFET	Original	PDF	42.93KB	5
Si1012R-T1-E3	Vishay	Transistor Mosfet N-CH 20V 0.5A 3SC-75A REEL	Original	PDF	92.04KB	6
SI1012R-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 500MA SC-75A	Original	PDF		11
SI1012R-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 500MA SC-75A	Original	PDF		11

SI1012-TP	Micro Commercial	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL MOSFET, SOT-523 PACKAG	Original	PDF	613.78KB
Si1012X	Vishay Intertechnology	N-Channel 1.8-V (G-S) MOSFET	Original	PDF	42.93KB	5
Si1012X	Vishay Siliconix	N-Channel 1.8-V (G-S) MOSFET	Original	PDF	48.52KB	5
Si1012X-E3	Vishay	Transistor Mosfet N-CH 20V 0.5A 3SC-89	Original	PDF	92.04KB	6
Si1012X-T1	Vishay Intertechnology	N-Channel 1.8-V (G-S) MOSFET	Original	PDF	42.93KB	5
SI1012X-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 500MA SC89-3	Original	PDF		11

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Vishay Intertechnologies SI1012CR-T1-GE3 - Tape and Reel (Alt: SI1012CR-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI1012CR-T1-GE3	Tape & Reel		33 Weeks, 1 Days	3,000	1 - 10 - 100 - 1000 - 10000 $0.07	Buy Now
Arrow Electronics	SI1012CR-T1-GE3	Cut Strips	1	52 Weeks	1	1 $0.08 10 $0.08 100 $0.08 1000 $0.08 10000 $0.08	Buy Now
Newark ()	SI1012CR-T1-GE3	Tape & Reel			10	1 $0.63 10 $0.63 100 $0.24 1000 $0.18 10000 $0.17	Buy Now
	SI1012CR-T1-GE3	Cut Tape			1	1 $0.63 10 $0.63 100 $0.24 1000 $0.18 10000 $0.17	Buy Now
	SI1012CR-T1-GE3	Tape & Reel			100	1 - 10 - 100 $0.26 1000 $0.18 10000 $0.18	Buy Now
	SI1012CR-T1-GE3	Cut Tape			5	1 - 10 $0.34 100 $0.26 1000 $0.18 10000 $0.18	Buy Now
	SI1012CR-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.12	Buy Now
	SI1012CR-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.09	Buy Now
TTI	SI1012CR-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.11	Buy Now
Bristol Electronics ()	SI1012CR-T1-GE3		4,936			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SI1012CR-T1-GE3		2,615		1	1 $0.75 10 $0.75 100 $0.38 1000 $0.15 10000 $0.15	Buy Now

Quest Components ()	SI1012CR-T1-GE3		2,400			1 $1.25 10 $1.25 100 $1.25 1000 $0.50 10000 $0.44	Buy Now
	SI1012CR-T1-GE3		2,400			1 $1.25 10 $1.25 100 $1.25 1000 $0.50 10000 $0.44	Buy Now
	SI1012CR-T1-GE3		2,092			1 $1.00 10 $1.00 100 $1.00 1000 $0.20 10000 $0.15	Buy Now
	SI1012CR-T1-GE3		2,092			1 $1.00 10 $1.00 100 $1.00 1000 $0.20 10000 $0.15	Buy Now
	SI1012CR-T1-GE3		1,956			1 $0.79 10 $0.79 100 $0.79 1000 $0.24 10000 $0.16	Buy Now
	SI1012CR-T1-GE3		1,956			1 $0.79 10 $0.79 100 $0.79 1000 $0.24 10000 $0.16	Buy Now
TME	SI1012CR-T1-GE3				1	1 $0.25 10 $0.25 100 $0.25 1000 $0.13 10000 $0.10	Get Quote
Avnet Asia	SI1012CR-T1-GE3			54 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.09	Buy Now
EBV Elektronik	SI1012CR-T1-GE3			53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI1012R-T1-GE3 20V 0.6A 175MW 700MOHM @ 4.5V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SI1012R-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.30	Get Quote
Vishay Siliconix SI1012X-T1-GE3 MOSFET, POWER;N-CH;VDSS 20V;RDS(ON) 0.41OHM;ID 500MA;SC-89 (SOT-490);HALOGEENFREE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SI1012X-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.30	Get Quote
Vishay Siliconix SI1012CR-T1-GE3 SI1012CR-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 0.63 A, 20 V, 3-PIN SC-75A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SI1012CR-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.21	Get Quote
Vishay Intertechnologies SI1012R-T1-E3 Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75A T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics ()	SI1012R-T1-E3		6,942		1	1 $0.60 10 $0.60 100 $0.30 1000 $0.12 10000 $0.09	Buy Now
	SI1012R-T1-E3		3,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components ()	SI1012R-T1-E3		4,285			1 $0.85 10 $0.85 100 $0.85 1000 $0.25 10000 $0.17	Buy Now
	SI1012R-T1-E3		4,285			1 $0.80 10 $0.80 100 $0.80 1000 $0.16 10000 $0.12	Buy Now

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SI1012 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si1012cr 11-mar-11	PDF
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated	Original	si1012cr sc-75a 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
SC-75 Abstract: SC-75A SC-89 Si1012R-T1 Si1012X-T1 Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated	Original	si1012r/x sc-75a sc-89 si1012r-ted +408-apr-05 sc-75 si1012r-t1 si1012x-t1	PDF
Si1012X-T1-GE3 Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated	Original	si1012r/x 2002/95/ec sc-75a sc-89 +218-jul-08 si1012x-t1-ge3	PDF
Si1012R Contextual Info: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si1012r s-51298rev 27-jul-05	PDF
Si1012R Contextual Info: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si1012r 400ma 150ma 200ma +2250ma 19-feb-04	PDF
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated	Original	si1012cr sc-75a 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3	Original	si1012r si1012x sc-75a sc-89 +42002/95/ec 2011/65/eu js709a 02-oct-12	PDF
SI1012X-T1-GE3 Abstract: si1012r-t1-ge3 Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated	Original	si1012r/x 2002/95/ec sc-75a sc-89 +42011/65/eu 12-mar-12 si1012x-t1-ge3 si1012r-t1-ge3	PDF
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21	Original	si1012cr 2002/95/ec sc-75a 11-mar-11	PDF
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21	Original	si1012cr 2002/95/ec sc-75a 2011/65/eu +112-mar-12	PDF
Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated	Original	si1012r/x 2002/95/ec sc-75a sc-89 +111-mar-11	PDF
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated	Original	si1012cr sc-75a 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
AN609 Abstract: Si1012R n mosfet pspice parameters Contextual Info: Si1012R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si1012r an609 02-apr-07 n mosfet pspice parameters	PDF

Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated	Original	si1012r/x sc-75a sc-89 s-50366--rev +128-feb-05	PDF
SC-75 Abstract: SC-75A SC-89 PC2255 Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated	Original	si1012r/x 2002/95/ec sc-75a sc-89 +311-mar-11 sc-75 pc2255	PDF
Si1012R-T1-E3 Abstract: Si1012X-T1-E3 Si1012X-T1-GE3 SC-75 SC-75A SC-89 SI1012R-T1-GE3 Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • Halogen-free Option Available TrenchFET Power MOSFET: 1.8 V Rated	Original	si1012r/x sc-75a sc-89 si1012r-t1-e3 +4si1012x-t1-e3 si1012x-t1-ge3 sc-75 si1012r-t1-ge3	PDF
Si1012CR-T1-GE3 Abstract: SI1012CR Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21 Definition	Original	si1012cr 2002/95/ec sc-75a si1012cr-t1-ge3 +111-mar-11	PDF
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated	Original	si1012cr sc-75a 2011/65/eu 2002/95/ec +112-mar-12	PDF
SI1012X-T1-E3 Abstract: Si1012X-T1-GE3 SI1012R/X SC-75 SC-75A SC-89 Si1012R-T1-E3 S-81543-Rev Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • Halogen-free Option Available TrenchFET Power MOSFET: 1.8 V Rated	Original	si1012r/x sc-75a sc-89 18-jul-08 +5si1012x-t1-e3 si1012x-t1-ge3 sc-75 si1012r-t1-e3 s-81543-rev	PDF
Contextual Info: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3	Original	si1012r si1012x sc-75a sc-89 +42002/95/ec 2011/65/eu js709a 02-oct-12	PDF
SC-75 Abstract: SC-75A SC-89 Si1012R Si1012X Contextual Info: Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,	Original	si1012r/x s-02464--rev 25-oct-00 sc-75 +4sc-75a sc-89 si1012r si1012x	PDF
Si1012-A Abstract: SI1012-A-GM CIP-51 Contextual Info: Si1012-A Ultra-Low Power 16 kB, 12-bit ADC MCU with Integrated 240–960 MHz Transceiver Transceiver Features Supply Voltage: 1.8 to 3.6 V - Typical sleep mode current < 0.1 µA; retains state and RAM contents over full supply range; fast wakeup of < 2 µs	Original	si1012-a 12-bit 16-bit 32-bit +3512-byte si1012-a-gm cip-51	PDF
SI1012CR Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated	Original	si1012cr sc-75a 2011/65/eu 2002/95/ec +112-mar-12	PDF

SI1012 Search Results

SI1012 Datasheets (21)

SI1012 Price and Stock

Vishay Intertechnologies SI1012CR-T1-GE3

Vishay Siliconix SI1012R-T1-GE3

Vishay Siliconix SI1012X-T1-GE3

Vishay Siliconix SI1012CR-T1-GE3

Vishay Intertechnologies SI1012R-T1-E3

SI1012 Datasheets Context Search

SC-75

Si1012X-T1-GE3

Si1012R

Si1012R

SI1012X-T1-GE3

AN609

SC-75

Si1012R-T1-E3

Si1012CR-T1-GE3

SI1012X-T1-E3

SC-75

Si1012-A

SI1012CR