SI-RECTIFIER 10A Search Results

SI-RECTIFIER 10A Result Highlights (5)

Part	Manufacturer	Description	Download
CRG11B	Toshiba Electronic Devices & Storage Corporation	General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT	Datasheet
CRG10A	Toshiba Electronic Devices & Storage Corporation	General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT	Datasheet
CMG03A	Toshiba Electronic Devices & Storage Corporation	General-purpose diode, 600 V, 2 A , Rectifier Diode, M-FLAT	Datasheet
CMG06A	Toshiba Electronic Devices & Storage Corporation	General-purpose diode, 600 V, 1 A , Rectifier Diode, M-FLAT	Datasheet
CRG09A	Toshiba Electronic Devices & Storage Corporation	General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT	Datasheet

SI-RECTIFIER 10A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
cm 324 Contextual Info: PD-97804 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67434 550V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67434 IRHNJ63434 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω ID 3.4A 300K Rads (Si) 3.4A 2.9Ω International Rectifier’s R6TM technology provides	Original	PD-97804 IRHNJ67434 IRHNJ63434 90MeV/ MIL-STD-750, MlL-STD-750, cm 324	PDF
IRHNJ597230 Abstract: IRHNJ593230 Contextual Info: PD - 94046D RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A International Rectifier’s R5TM technology provides	Original	94046D IRHNJ597230 IRHNJ597230 IRHNJ593230 -200V, MIL-STD-750, MlL-STD-750,	PDF
Contextual Info: PD-97805 IRHY67434CM 550V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA TECHNOLOGY Product Summary Part Number IRHY67434CM IRHY63434CM Radiation Level RDS(on) 100K Rads (Si) 3.0Ω 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides	Original	PD-97805 O-257AA) IRHY67434CM IRHY63434CM 90MeV/ O-257AA. MIL-PRF-19500	PDF
Contextual Info: PD - 94046D IRHNJ597230 200V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A International Rectifier’s R5TM technology provides	Original	94046D IRHNJ597230 IRHNJ597230 IRHNJ593230 suc200V, MIL-STD-750, MlL-STD-750,	PDF
Contextual Info: PD-97198A 2N7598U3 IRHNJ67C30 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number IRHNJ67C30 IRHNJ63C30 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω 300K Rads (Si) 2.9Ω ID 3.4A 3.4A International Rectifier’s R6TM technology provides	Original	PD-97198A 2N7598U3 IRHNJ67C30 IRHNJ63C30 90MeV/ MIL-STD-750, MlL-STD-750,	PDF
95837 Abstract: PD-95837 IRHY63C30CM IRHY67C30CM RG 2006 10A 600V Contextual Info: PD-95837 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY67C30CM 600V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0Ω IRHY63C30CM 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides	Original	PD-95837 O-257AA) IRHY67C30CM IRHY67C30CM IRHY63C30CM 90MeV/ 5M-1994. O-257AA. 95837 PD-95837 RG 2006 10A 600V	PDF
2n7598 Abstract: 2N7598U3 IRHNJ67C30 2N75 IRHNJ63C30 PD-97198A Contextual Info: PD-97198A 2N7598U3 IRHNJ67C30 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number IRHNJ67C30 IRHNJ63C30 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω 300K Rads (Si) 2.9Ω ID 3.4A 3.4A International Rectifier’s R6TM technology provides	Original	PD-97198A 2N7598U3 IRHNJ67C30 IRHNJ63C30 90MeV/ MIL-STD-750, MlL-STD-750, 2n7598 2N7598U3 IRHNJ67C30 2N75 IRHNJ63C30 PD-97198A	PDF
mosfet motor dc 48v Abstract: IRHY593034CM IRHY597034CM T0-257AA G 331 Contextual Info: PD - 94663A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597034CM 60V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHY597034CM 100K Rads (Si) 0.095Ω -18A* IRHY593034CM 300K Rads (Si) 0.095Ω -18A* International Rectifier’s R5TM technology provides	Original	4663A O-257AA) IRHY597034CM IRHY597034CM IRHY593034CM 5M-1994. O-257AA. mosfet motor dc 48v T0-257AA G 331	PDF
IRHNJ63234 Abstract: IRHNJ67234 PD-97197 Contextual Info: PD-97197 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67234 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67234 IRHNJ63234 Radiation Level RDS(on) ID 100K Rads (Si) 0.21Ω 12.4A 300K Rads (Si) 0.21Ω 12.4A SMD-0.5 International Rectifier’s R6TM technology provides	Original	PD-97197 IRHNJ67234 IRHNJ63234 90MeV/ MIL-STD-750, MlL-STD-750, IRHNJ63234 IRHNJ67234 PD-97197	PDF
PD-94667C Abstract: IRHMS67260 IRF P CHANNEL MOSFET 200V 20A IRHMS63260 ISD45A Contextual Info: PD-94667C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides	Original	PD-94667C O-254AA) IRHMS67260 IRHMS67260 IRHMS63260 90MeV/ O-254AA. MIL-PRF-19500 PD-94667C IRF P CHANNEL MOSFET 200V 20A IRHMS63260 ISD45A	PDF
Contextual Info: PD - 94343 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597130CM 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A International Rectifier’s R5TM technology provides	Original	O-257AA) IRHY597130CM IRHY597130CM IRHY593130CM 5M-1994. O-257AA.	PDF
Contextual Info: PD-94764D RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB IRHLUB7970Z4 60V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLUB7970Z4 100K Rads (Si) 1.3Ω -0.53A IRHLUB7930Z4 300K Rads (Si) 1.3Ω -0.53A International Rectifier’s R7TM Logic Level Power	Original	PD-94764D IRHLUB7970Z4 IRHLUB7930Z4 MIL-PRF-19500/255L	PDF
IRHMS63264 Abstract: IRHMS67264 Contextual Info: PD-96991 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67264 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMS67264 100K Rads (Si) 0.041Ω IRHMS63264 300K Rads (Si) 0.041Ω ID 45A 45A International Rectifier’s R6TM technology provides	Original	PD-96991 O-254AA) IRHMS67264 IRHMS67264 IRHMS63264 90MeV/ O-254AA. MIL-PRF-19500	PDF
IRHYS63234CM Abstract: IRHYS67234CM Contextual Info: PD-97193 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67234CM 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67234CM 100K Rads (Si) 0.22Ω ID 12A IRHYS63234CM 300K Rads (Si) 12A 0.22Ω International Rectifier’s R6 TM technology provides	Original	PD-97193 O-257AA) IRHYS67234CM IRHYS67234CM IRHYS63234CM 90MeV/ 5M-1994. O-257AA.	PDF

Contextual Info: PD-96923 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67230 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67230 IRHNJ63230 Radiation Level RDS(on) 100K Rads (Si) 0.13Ω 300K Rads (Si) 0.13Ω ID 16A 16A SMD-0.5 International Rectifier’s R6TM technology provides	Original	PD-96923 IRHNJ67230 IRHNJ63230 90MeV/ MIL-STD-750, MlL-STD-750,	PDF
IRHY593230CM Abstract: IRHY597230CM T0-257AA Contextual Info: PD - 94319A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597230CM 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A IRHY593230CM 300K Rads (Si) 0.515Ω -8.0A International Rectifier’s R5TM technology provides	Original	4319A O-257AA) IRHY597230CM IRHY597230CM IRHY593230CM 5M-1994. O-257AA. T0-257AA	PDF
2N7599T3 Contextual Info: PD-95837A 2N7599T3 IRHY67C30CM 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0Ω IRHY63C30CM 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides	Original	PD-95837A 2N7599T3 IRHY67C30CM O-257AA) IRHY67C30CM IRHY63C30CM 90MeV/ O-257AA. MIL-PRF-19500 2N7599T3	PDF
IRHF593230 Abstract: IRHF597230 Contextual Info: PD - 94450 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number IRHF597230 IRHF593230 Radiation Level RDS(on) ID 100K Rads (Si) 0.54Ω -4.5A 300K Rads (Si) 0.54Ω -4.5A International Rectifier’s R5TM technology provides	Original	IRHF597230 IRHF593230 MIL-STD-750, MlL-STD-750, O-205AF IRHF593230 IRHF597230	PDF
mev smd diode Contextual Info: PD-96959 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67164 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 0.018Ω 56A* 300K Rads (Si) SMD-2 International Rectifier’s R6 technology provides	Original	PD-96959 IRHNA67164 IRHNA63164 90MeV/ MIL-STD-750, MlL-STD-750, mev smd diode	PDF
IRHYS67230CM Abstract: IRHYS63230CM PD-96925B Contextual Info: PD-96925B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides	Original	PD-96925B O-257AA) IRHYS67230CM IRHYS67230CM IRHYS63230CM 90MeV/ 5M-1994. O-257AA. PD-96925B	PDF
IRHMS63160 Abstract: IRHMS67160 Contextual Info: PD-94723A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides	Original	PD-94723A O-254AA) IRHMS67160 IRHMS67160 IRHMS63160 90MeV/ O-254AA. MIL-PRF-19500 IRHMS63160	PDF
IRF 949 Abstract: IRHNA63260 IRHNA67260 Contextual Info: PD - 94342C RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67260 100K Rads (Si) IRHNA63260 300K Rads (Si) RDS(on) 0.028Ω 0.028Ω ID 63A 63A SMD-2 International Rectifier’s R6 technology provides	Original	94342C IRHNA67260 IRHNA67260 IRHNA63260 90MeV/ controll875A/ MIL-STD-750, MlL-STD-750, IRF 949	PDF
IRHY597130CM Abstract: IRHY593130CM T0-257AA Contextual Info: PD - 94343 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597130CM 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A International Rectifier’s R5TM technology provides	Original	O-257AA) IRHY597130CM IRHY597130CM IRHY593130CM 5M-1994. O-257AA. T0-257AA	PDF
Contextual Info: PD-96931 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67134 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) RDS(on) 0.088Ω ID 19A IRHNJ63134 0.088Ω 19A 300K Rads (Si) SMD-0.5 International Rectifier’s R6TM technology provides	Original	PD-96931 IRHNJ67134 IRHNJ67134 IRHNJ63134 90MeV/ MIL-STD-750, MlL-STD-750,	PDF

SI-RECTIFIER 10A Search Results

SI-RECTIFIER 10A Result Highlights (5)

SI-RECTIFIER 10A Datasheets Context Search

cm 324

IRHNJ597230

95837

2n7598

mosfet motor dc 48v

IRHNJ63234

PD-94667C

IRHMS63264

IRHYS63234CM

IRHY593230CM

2N7599T3

IRHF593230

mev smd diode

IRHYS67230CM

IRHMS63160

IRF 949

IRHY597130CM