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    IRHNJ67230 Search Results

    IRHNJ67230 Datasheets (1)

    International Rectifier
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRHNJ67230
    		International Rectifier Original PDF 144KB 8
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    IRHNJ67230 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IRHNJ67230SCV

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    Vyrian IRHNJ67230SCV 760
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    Infineon Technologies AG IRHNJ67230B

    Power Field-Effect Transistor
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    Vyrian IRHNJ67230B 660
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    Infineon Technologies AG IRHNJ67230SCS

    Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Vyrian IRHNJ67230SCS 640
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    Infineon Technologies AG IRHNJ67230A

    Power Field-Effect Transistor
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    Vyrian IRHNJ67230A 570
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    Infineon Technologies AG IRHNJ67230SCSA

    Power Field-Effect Transistor
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    Vyrian IRHNJ67230SCSA 560
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    IRHNJ67230 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRHNJ63230

    Abstract: IRHNJ67230
    Contextual Info: PD-96923B RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67230 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67230 IRHNJ63230 Radiation Level RDS(on) 100K Rads (Si) 0.13Ω 300K Rads (Si) 0.13Ω ID 16A 16A SMD-0.5 International Rectifier’s R6TM technology provides


    Original     		pd-96923birhnj67230irhnj6323090mev/+2mil-std-750mll-std-750 PDF

    JANSR2N7591U3

    Abstract: JANSr2N7591 IRHNJ67230 JANSF2N7591U3
    Contextual Info: PD-96923C IRHNJ67230 JANSR2N7591U3 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/746 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67230 100K Rads (Si) IRHNJ63230 300K Rads (Si) RDS(on) 0.13Ω 0.13Ω


    Original     		pd-96923cirhnj67230irhnj63230jansr2n7591u3+5mil-prf-19500/746jansf2n7591u390mev/mil-std-750jansr2n7591 PDF

    JANSr2N7591

    Contextual Info: PD-96923C IRHNJ67230 JANSR2N7591U3 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/746 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67230 100K Rads (Si) IRHNJ63230 300K Rads (Si) RDS(on) 0.13Ω 0.13Ω


    Original     		pd-96923cirhnj67230jansr2n7591u3mil-prf-19500/746+5irhnj63230jansf2n7591u390mev/mil-std-750jansr2n7591 PDF

    Contextual Info: PD-96923 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67230 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67230 IRHNJ63230 Radiation Level RDS(on) 100K Rads (Si) 0.13Ω 300K Rads (Si) 0.13Ω ID 16A 16A SMD-0.5 International Rectifier’s R6TM technology provides


    Original     		pd-96923irhnj67230irhnj6323090mev/+2mil-std-750mll-std-750 PDF

    Contextual Info: PD-96923A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67230 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67230 IRHNJ63230 Radiation Level RDS(on) 100K Rads (Si) 0.13Ω 300K Rads (Si) 0.13Ω ID 16A 16A SMD-0.5 International Rectifier’s R6TM technology provides


    Original     		pd-96923airhnj67230irhnj6323090mev/+2mil-std-750mll-std-750 PDF

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		30am-544-0-1737-2comdb8029cirf460+9smd transistor marking k38smd transistor k38we 751002 ssmd-6ctransistor smd k45rad-hard igbtirf3504afl2805s manufactured by international rectifier550-065 PDF

    2N7591

    Abstract: 2n7587 2N7587U3 2N7591U3 2N7593 2N7589 2N7593U3 2N7587U3C jans 2N7587U3 2N7591U3C
    Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 June 2010. MIL-PRF-19500/746A 19 March 2010 SUPERSEDING MIL-PRF-19500/746 15 May 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original     		mil-prf-19500/746amil-prf-19500/7462n7587u32n7587u3c+112n7589u32n7589u3c2n7591u32n7591u3c2n7593u32n7593u3c2n75912n75872n75932n7589jans 2n7587u3 PDF

    Contextual Info: PD-97808 Radiation Hardended, Solid-State Relay with Buffered Inputs Product Summary RDHB710SE20A2SX Dual, 200V, 10A 5 Part Number Breakdown Voltage Current tr / tf Logic Drive Voltage RDHB710SE20A2SX 200V 10A Controlled 3.3V 8-PIN SURFACE MOUNT Description


    Original     		pd-97808rdhb710se20a2sxmil-prf-38534 PDF