SI APD Search Results
SI APD Price and Stock
OMRON Electronic Components G6D-1A-ASI-AP-DC24RELAY GEN PURPOSE SPST 5A 24V |
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G6D-1A-ASI-AP-DC24 | Tube | 467 | 1 |
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G6D-1A-ASI-AP-DC24 |
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OMRON Electronic Components G6D-1A-ASI-AP-DC5RELAY GEN PURPOSE SPST 5A 5V |
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G6D-1A-ASI-AP-DC5 | Bulk |
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OMRON Electronic Components G6D-1A-ASI-AP-DC12POWER PCB RELAY |
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G6D-1A-ASI-AP-DC12 | Bulk | 500 |
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G6D-1A-ASI-AP-DC12 |
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OMRON Corporation G6D-1A-ASI-AP DC24Electromechanical Relay SPST-NO 5A 24V 250V 2.88KOhm Through Hole - Rail/Tube (Alt: G6D1AASIAPDC24) |
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G6D-1A-ASI-AP DC24 | Tube | 500 |
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G6D-1A-ASI-AP DC24 | 879 |
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G6D-1A-ASI-AP DC24 | Bulk | 312 | 0 Weeks, 1 Days | 1 |
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OMRON Corporation G6D-1A-ASI-AP DC12 BY OMBPower Relay SPST N.O. 12V 16.7mA PC Pin Through Hole Tube - Bulk (Alt: G6D1AASIAPDC12BYOMB) |
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G6D-1A-ASI-AP DC12 BY OMB | Bulk | 500 |
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SI APD Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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c5658Contextual Info: SILICON PHOTODIODES S-16. Si APDs Blue-enhanced T,f-4 I • f.+ : r -i ■ r.+r* V 'i- -* -*: ■ r- t- * ;I. : ■ a S5343. S5344. S5345 Optimized for low-light-level detection Compared to conventional Si APDs, these new Si APDs offer higher gain at short wavelength, achieving high sensitivity and low noise. They also |
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S5343. S5344. S5345 S5343 S5344 C5658 C5460-01 C5331-03 C5331-13 c5658 | |
1NA101
Abstract: S8890 APD S11519
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S11519 S8890 SE-171 KAPD1028E01 1NA101 APD S11519 | |
Contextual Info: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region. |
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S11519 S8890 SE-171 KAPD1028E01 | |
Contextual Info: Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Si APD Arrays Photodiodes FOR ANALYTICAL Applications Avalanche Photodiodes – Si APD Arrays Applications • Spectroscopy • Particle detection • Spot tracking and alignment systems |
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C30927 C30985E C30927EH-01 C30927EH-02 C30927EH-03 C30985E | |
APD ArraysContextual Info: PhotodiodeSForhiGh-PerFormAnceAPPlicAtionS Avalanche Photodiodes Si APD Arrays Avalanche Photodiodes – Si APD Arrays Applications • LIDAR Light Detection And Ranging • Particle detection • Spot tracking and alignment systems • Adaptive optics |
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C30927 C30985E C30927EH-01 C30927EH-02 C30927EH-03 C30985E APD Arrays | |
C30703Contextual Info: Avalanche Photodiodes Photodiodes for High-Performance Applications FOR HIGH ENERGY RADIATION DETECTIONS APPLICATIONS, Large Area Si-APDs – UV-Enhanced APDs MOLECULAR IMAGING Large Area Si-APDs – UV-Enhanced APDs Applications • Nuclear medicine • Fluorescence detection |
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xcellen39ECERH C30700-100 C30700-200 C30626 C30739 C30703 | |
Optical DetectorContextual Info: HR8202TG Description Si APD The HR8202TG is a Si avalanche photodiode which responds to a 0.6 to 0.9 pm band. Its high frequency characteristics make it suitable as an optical detector especially for analog optical transmission systems. Features • • • |
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HR8202TG HR8202TG: HR8202TG Optical Detector | |
APD 1550 nm photodetector
Abstract: C30950EH HUV-1100
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C30659 C30659-1550-R08BH C30645 C30659-1550-R2AH C30919E C30817 C30950EH LLAM-1550-R2AH APD 1550 nm photodetector C30950EH HUV-1100 | |
Contextual Info: HR8202TG Si APD Description The HR8202TG is a Si avalanche photodiode which responds to a 0.6 to 0.9 |am band. Its high frequency characteristics make it suitable as an optical detector especially for analog optical transmission systems. Features • • • |
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HR8202TG HR8202TG HR8202TG: 00144H | |
Silicon DetectorContextual Info: Si detectors for high energy particles CHAPTER 10 1 Characteristics 1-1 Active area 1-2 Dark current and junction capacitance 1-3 Response speed 2 Si detectors for scintillator coupling 3 Si direct detectors 3-1 3-2 3-3 3-4 3-5 Thickness of depletion layer |
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KSPDC0073EA Silicon Detector | |
Si apd photodiode
Abstract: Optical Detector
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HR8203KG HR8203KG HR8203KG: Si apd photodiode Optical Detector | |
near IR photodiodes
Abstract: S8745-01 S8558
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KSPD0001E09 near IR photodiodes S8745-01 S8558 | |
S9717-05KContextual Info: Si APD S9717 series High reliability, surface-mount ceramic package S9717 series are Si APD avalanche photodiodes encapsulated in a surface-mount ceramic package that ensures high reliability in the same wide operating temperature range (-20 to +85 °C) as metal package devices. S9717 series also allows |
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S9717 S9717-02K/-05K: S9717-05L: SE-171 KAPD1014E03 S9717-05K | |
Contextual Info: Si APD S12023 series, etc. Low bias operation, for 800 nm band These are 800 nm band near-infrared Si APDs that can operate at low voltages, 200 V or less. They are suitable for applications such as FSO free space optics and optical rangefinders. Features |
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S12023 S12023-02 S12023-05 S12051 S12086 S12023-10 S12023-10A S3884 S2384 S2385 | |
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Contextual Info: Si APD S9251/S12092 series High sensitivity in near infrared range λ=900 nm These are Si APDs that offer enhanced 900 nm band near-infrared sensitivity. They are suitable for applications such as optical rangefinders. Features Applications High sensitivity in near infrared range (λ=900 nm) |
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S9251/S12092 S12092-02 S12092-05 S9251-10 S9251-15 KAPD1013E04 | |
PDINP075500A-0-0-01
Abstract: PD-LD 850nm APD 850nm photodiode pigtail pigtail pin photodiode ge PDINV300SC2A-M-0 PDSIU500ST73-T-0 Si apd photodiode PDGAJ1001FCA-0-0-01 PDINC100SC22-M-0
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1100nm, 1650nm 2100nm. 100micron. PDINP075500A-0-0-01 PD-LD 850nm APD 850nm photodiode pigtail pigtail pin photodiode ge PDINV300SC2A-M-0 PDSIU500ST73-T-0 Si apd photodiode PDGAJ1001FCA-0-0-01 PDINC100SC22-M-0 | |
PDINP075FC11-W-0
Abstract: 850nm APD 850nm photodiode pigtail germanium photodiode PIN PDINV300FC21-M-0 D10-210 InGaAs apd photodiode photodiode germanium PDGAJ1001FCA-0-0-01 PDINC1003FCA-0-0-01
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1100nm, 1650nm 2100nm. 100micron. PDINP075FC11-W-0 850nm APD 850nm photodiode pigtail germanium photodiode PIN PDINV300FC21-M-0 D10-210 InGaAs apd photodiode photodiode germanium PDGAJ1001FCA-0-0-01 PDINC1003FCA-0-0-01 | |
S13081
Abstract: APD Arrays
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org/abs/1003 6071v2 S13081 APD Arrays | |
GaP photodiode APD
Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
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S1087. S1087-01 G1115 G1116 G1117 G1118 G1120 G1126-02. S6801-01 S6926. GaP photodiode APD uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode | |
Contextual Info: DATASHEET Photon Detection C30985E 25-Element Silicon Avalanche Photodiode Si APD Linear Array The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as |
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C30985E 25-Element C30985E | |
S12926
Abstract: S12926-05
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C30817Contextual Info: Modules and optical Receivers PIN AND APD Si PIN and APD Modules, InGaAs APD Modules Receiver Modules For Analytical AND Industrial Applications Si PIN and APD Modules – InGaAs APD Modules Applications • Laser range finder Product Description These modules comprise of a photodetector PIN or APD and a transimpedance amplifier in the |
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C30659 C30659-1550-R2AH C30645 C30919E C30817 C30950EH LLAM-1550-R2AH C30662 LLAM-1060-R8BH C30817 | |
S9717
Abstract: S9717-02K S9717-05K S9717-05L PA1000
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S9717 S9717-02K/-05K: S9717-05L: SE-171 KAPD1014E02 S9717-02K S9717-05K S9717-05L PA1000 | |
KAPDB0017ECContextual Info: PHOTODIODE Si APD S9717 series High reliability, surface-mount ceramic package S9717 series are Si APD avalanche photodiodes encapsulated in a surface-mount ceramic package that ensures high reliability in the same wide operating temperature range (-20 to +85 ˚C) as metal package devices. S9717 series also allows downsizing of equipment in various |
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S9717 S9717-02K/-05K: S9717-05L: SE-171 KSPD1014E02 KAPDB0017EC |