SI 625 Search Results

23PM-C108

Abstract: Pulse generator circuit 23pm c108 SI-7300A 2SC2002 equivalent 23PM SI 7300 DIODE lm d8 Heatsinks 7300A
Contextual Info: Unipolar Driver ICs SI-7300A and SI-7330A • Ratings Ta = 25°C Absolute maximum rating Supply voltage Output current (A) (V) Junction temperature (°C) Operating ambient temperature (°C) Storage temperature (°C) Type No. VCC1 VCC2 Io Tj Top Tstg SI-7300A

SI-7300A

Abstract: 23PM-C108 Pulse generator circuit SI 7300 SI-7502 TD62302P 23pm c108 2SC2002 SI-7200M SI-7230M
Contextual Info: Unipolar Driver ICs SI-7300A and SI-7330A • Ratings Ta = 25°C Absolute maximum rating Supply voltage Output current (A) (V) Junction temperature (°C) Operating ambient temperature (°C) Storage temperature (°C) Type No. VCC1 VCC2 Io Tj Top Tstg SI-7300A

Contextual Info: PD-93826E IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHY57130CM 100K Rads (Si) IRHY53130CM 300K Rads (Si) IRHY54130CM 500K Rads (Si)

Contextual Info: PD-93826E IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHY57130CM 100K Rads (Si) IRHY53130CM 300K Rads (Si) IRHY54130CM 500K Rads (Si)

038mh

Contextual Info: PD - 95841 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67130CM 100K Rads (Si) 0.042Ω ID 20A* IRHYB63130CM 300K Rads (Si) 0.042Ω 20A* IRHYB64130CM 600K Rads (Si)

LVDS 30 pin hirose connector LVDS

Contextual Info: Displays ANDpSi089C362-4HB 8.90” WSVGA Color p-Si TFT LCD Module The ANDpSi089C362-4HB is 1024 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT

Contextual Info: Displays PRELIMINARY ANDpSi089C362Z 8.90” WSVGA Color p-Si TFT LCD Module The ANDpSi089C362Z is 1024 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT

95818

Contextual Info: PD - 95818 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 0.13Ω 16A IRHYB64230CM 600K Rads (Si)

ANDpSi089C362S-4HB

Abstract: BHSR-02VS-1 DF19G-14S-1C DF19L-14P-1H LVDS 40 pin hirose connector LVDS k1024
Contextual Info: Displays ANDpSi089C362S-4HB 8.90” WSVGA Color p-Si TFT LCD Module The ANDpSi089C362S-4HB is 1024 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT

Contextual Info: Displays PRELIMINARY ANDpSi089C362S 8.90” WSVGA Color p-Si TFT LCD Module The ANDpSi089C362S is 1024 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT

SD-54102-0301

Abstract: ccfl driver SM02 1.8 tft display
Contextual Info: Displays ANDpSi08C343S 8.4” SVGA Color p-Si TFT LCD Module The ANDpSi08C343S is 800 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT technology

Contextual Info: Displays PRELIMINARY ANDpSi089C362-4HB 8.90” WSVGA Color p-Si TFT LCD Module The ANDpSi089C362-4HB is 1024 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT

BC337 pnp transistor datasheet

Abstract: transistor bc337 npn BC337 BC337-25 PNP transistor download datasheet NPN general purpose transistor BC337 transistor BC337-16 10D3 BC327 BC328 BC337-16
Contextual Info: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92

Contextual Info: Displays PRELIMINARY ANDpSi089C362-4HB 8.90” WSVGA Color p-Si TFT LCD Module The ANDpSi089C362-4HB is 1024 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT

BC327 NPN transistor datasheet

Abstract: bc327 equivalent transistor bc328 bc327 10D3 BC327-16 BC327-25 BC327-40 BC328 BC328-16
Contextual Info: BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92

PN2907

Abstract: PN2907A pn2907 2n2907
Contextual Info: PN2907 / PN2907A PN2907 / PN2907A Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren PNP PNP Version 2006-09-12 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse

Contextual Info: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92

ANDpSi08C351-HB

Abstract: DF19G-30S-1C
Contextual Info: Displays ANDpSi08C351-HB-KIT 8.4” SVGA Color p-Si TFT LCD Module The ANDpSi08C351-HB-KIT is 800 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT

MPSA42

Contextual Info: MPSA42-BK MPSA42-BK High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2011-04-27 Power dissipation Verlustleistung ±0.1 CBE min 12.5 4.6±0.1 4.6 625 mW Plastic case Kunststoffgehäuse TO-92 10D3

MPSA42

Abstract: MPSA43 na-100 10D3 MPSA92 MPSA93
Contextual Info: MPSA42 / MPSA43 MPSA42 / MPSA43 High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2005-06-17 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx.

Contextual Info: MPSA05 . MPSA06 MPSA05 . MPSA06 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-07-25 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions - Maße [mm] 625 mW

Contextual Info: PN2907A / 2N2907A PN2907A / 2N2907A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2005-11-21 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW

MPSA44

Contextual Info: MPSA44-BK MPSA44-BK High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2011-07-07 Power dissipation Verlustleistung ±0.1 E BC min 12.5 4.6±0.1 4.6 625 mW Plastic case Kunststoffgehäuse TO-92 10D3

2N2222A

Contextual Info: PN2222A / 2N2222A PN2222A / 2N2222A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2005-11-28 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92