95818 Search Results

95818

Contextual Info: PD - 95818 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 0.13Ω 16A IRHYB64230CM 600K Rads (Si)

80c85

Abstract: IC 8212 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH intersil 8212 CERAMIC FLATPACK
Contextual Info: HS-82C12RH Radiation Hardened 8-Bit Input/Output Port March 1996 Features Functional Diagram • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Intersil’ QM Plan

5962R9581801QJC

Abstract: 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH 108RAD
Contextual Info: HS-82C12RH S E M I C O N D U C T O R Radiation Hardened 8-Bit Input/Output Port March 1996 Features Functional Diagram • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Harris’ QM Plan

Contextual Info: PD-95818B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides

8212 latch

Abstract: 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH 17D06
Contextual Info: HS-82C12RH Semiconductor Radiation Hardened March 1996 8' Bit Input/O utput POU Functional Diagram Features • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Harris’ QM Plan

harris 8212

Contextual Info: 33 H A R R HS-82C12RH Radiation Hardened 8' Bît Input/Output Port March 1996 Features • Functional Diagram Devices QML Qualified in Accordance with MIL-PRF-38535 DS1 » • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Harris’ QM Plan

Contextual Info: PD-95818D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYB67230CM Radiation Level 100K Rads (Si) IRHYB63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A International Rectifier’s R6 TM technology provides

IRHYB63230CM

Abstract: IRHYB67230CM 8H6Y
Contextual Info: PD-95818C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 16A 0.13Ω Low-Ohmic

Contextual Info: PD-95818D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYB67230CM Radiation Level 100K Rads (Si) IRHYB63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A Low-Ohmic

95812

Abstract: 54F651FM 54F651SDM 74F651SC 74F651SPC F651 J24F M24B N24C 96b1
Contextual Info: 651*652 National Semiconductor 54F/74F651 • 54F/74F652 T ransceivers/Registers General Description Features These devices consist of bus transceiver circuits with D-type flip-flops, and co ntro l circuitry arranged fo r m ulti­ plexed transm ission of data d irectly from the input bus or

Contextual Info: VS-16EDU06-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 16 A FRED Pt FEATURES • Ultrafast recovery time, reduced Qrr, and soft recovery K • 175 °C maximum operating junction temperature • For PFC CRM, snubber operation • Low forward voltage drop

Contextual Info: Product Group: Vishay Semiconductors, Rectifiers / April 2015 Author: Giovanni Marengo Tel: +39 011 4510345 office , +39 348 0032784 (mobile) E-mail: Giovanni.Marengo@vishay.com New 10 A to 30 A FRED Pt Rectifiers in SMPD Package Offer Increased Power Density and System