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    95818 Search Results

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    95818 Price and Stock

    Elesa SPA

    Elesa SPA CE995818

    DD51 (INCH SIZES), MECHANICAL PO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CE995818 Bag 284 1
    • 1 $109.43
    • 10 $109.43
    • 100 $109.43
    • 1000 $109.43
    • 10000 $109.43
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    Elesa SPA CE995818-4N

    DD51 (INCH SIZES), MECHANICAL PO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CE995818-4N Bag 284 1
    • 1 $109.43
    • 10 $109.43
    • 100 $109.43
    • 1000 $109.43
    • 10000 $109.43
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    Elesa SPA CE995818-C1

    DD51 (INCH SIZES), MECHANICAL PO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CE995818-C1 Bag 284 1
    • 1 $109.43
    • 10 $109.43
    • 100 $109.43
    • 1000 $109.43
    • 10000 $109.43
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    Elesa SPA CE995818-C1-4N

    DD51 (INCH SIZES), MECHANICAL PO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CE995818-C1-4N Bag 284 1
    • 1 $109.43
    • 10 $109.43
    • 100 $109.43
    • 1000 $109.43
    • 10000 $109.43
    Buy Now

    Elesa SPA CE.95818

    DD51, MECHANICAL POSITION INDICA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CE.95818 Bag 10 1
    • 1 $113.27
    • 10 $113.27
    • 100 $113.27
    • 1000 $113.27
    • 10000 $113.27
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    95818 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    95818

    Contextual Info: PD - 95818 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 0.13Ω 16A IRHYB64230CM 600K Rads (Si)


    Original
    O-257AA) IRHYB67230CM IRHYB63230CM IRHYB64230CM IRHYB68230CM 1000K 90MeV/ 5M-1994. O-257AA. 95818 PDF

    80c85

    Abstract: IC 8212 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH intersil 8212 CERAMIC FLATPACK
    Contextual Info: HS-82C12RH Radiation Hardened 8-Bit Input/Output Port March 1996 Features Functional Diagram • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Intersil’ QM Plan


    Original
    HS-82C12RH MIL-PRF-38535 80c85 IC 8212 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH intersil 8212 CERAMIC FLATPACK PDF

    5962R9581801QJC

    Abstract: 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH 108RAD
    Contextual Info: HS-82C12RH S E M I C O N D U C T O R Radiation Hardened 8-Bit Input/Output Port March 1996 Features Functional Diagram • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Harris’ QM Plan


    Original
    HS-82C12RH MIL-PRF-38535 1-800-4-HARRIS 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH 108RAD PDF

    Contextual Info: PD-95818B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides


    Original
    PD-95818B O-257AA) IRHYB67230CM IRHYB63230CM 90MeV/ 5M-1994. O-257AA. PDF

    8212 latch

    Abstract: 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH 17D06
    Contextual Info: HS-82C12RH Semiconductor Radiation Hardened March 1996 8' Bit Input/O utput POU Functional Diagram Features • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Harris’ QM Plan


    OCR Scan
    HS-82C12RH MIL-PRF-38535 HS-80C85RH 8212 latch 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-82C12RH 17D06 PDF

    harris 8212

    Contextual Info: 33 H A R R HS-82C12RH Radiation Hardened 8' Bît Input/Output Port March 1996 Features • Functional Diagram Devices QML Qualified in Accordance with MIL-PRF-38535 DS1 » • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Harris’ QM Plan


    OCR Scan
    HS-82C12RH MIL-PRF-38535 HS-80C85RH 1-800-4-HARRIS harris 8212 PDF

    Contextual Info: PD-95818D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYB67230CM Radiation Level 100K Rads (Si) IRHYB63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A International Rectifier’s R6 TM technology provides


    Original
    PD-95818D O-257AA) IRHYB67230CM IRHYB63230CM 90MeV/ 5M-1994. O-257AA. PDF

    IRHYB63230CM

    Abstract: IRHYB67230CM 8H6Y
    Contextual Info: PD-95818C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 16A 0.13Ω Low-Ohmic


    Original
    PD-95818C O-257AA) IRHYB67230CM IRHYB67230CM IRHYB63230CM O-257AA 90MeV/ 8H6Y PDF

    Contextual Info: PD-95818D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYB67230CM Radiation Level 100K Rads (Si) IRHYB63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A Low-Ohmic


    Original
    PD-95818D O-257AA) IRHYB67230CM IRHYB63230CM 90MeV/ 5M-1994. O-257AA. PDF

    95812

    Abstract: 54F651FM 54F651SDM 74F651SC 74F651SPC F651 J24F M24B N24C 96b1
    Contextual Info: 651*652 National Semiconductor 54F/74F651 54F/74F652 T ransceivers/Registers General Description Features These devices consist of bus transceiver circuits with D-type flip-flops, and co ntro l circuitry arranged fo r m ulti­ plexed transm ission of data d irectly from the input bus or


    OCR Scan
    54F/74F651 54F/74F652 95812 54F651FM 54F651SDM 74F651SC 74F651SPC F651 J24F M24B N24C 96b1 PDF

    Contextual Info: VS-16EDU06-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 16 A FRED Pt FEATURES • Ultrafast recovery time, reduced Qrr, and soft recovery K • 175 °C maximum operating junction temperature • For PFC CRM, snubber operation • Low forward voltage drop


    Original
    VS-16EDU06-M3 J-STD-020, O-263AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Product Group: Vishay Semiconductors, Rectifiers / April 2015 Author: Giovanni Marengo Tel: +39 011 4510345 office , +39 348 0032784 (mobile) E-mail: Giovanni.Marengo@vishay.com New 10 A to 30 A FRED Pt Rectifiers in SMPD Package Offer Increased Power Density and System


    Original
    O-263AC) O-263 AEC-Q101-qualified VS-16CDH02-M3) VS-16CDU06HM3) VS-16CDU06-M3) VS-16EDH02HM3) VS-16EDH02-M3) VS-16EDU06HM3) PDF